2SD2719 - описание и поиск аналогов

2SD2719 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power) 2SD2719 Solenoid Drive Applications Unit mm Motor Drive Applications High DC current gain h = 2000 (min) (V = 2 V, I = 1 A) FE CE C Zener diode included between collector and base Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V

2SD2702 Transistors General purpose amplification (12V, 1.5A) 2SD2702 Dimensions (Unit mm) Application Low frequency amplifier Features 1) A collector current is large. 2) Collector saturation voltage is low.

2SD2707 Datasheet General Purpose Transistor (50V, 150mA) lOutline l SOT-723 Parameter Value SC-105AA VCEO 50V IC 150mA VMT3 lFeatures lInner circuit l l 1)High DC current gain. 2)High emitter-base voltage. (VCBO=12V) 3)Low saturation voltage. (Max.VCE(sat)=300mV at IC/IB=50/5mA) lApplication l LOW FREQENCY AMPLIFIER, DRIVER

For Muting (20V, 0.3A) 2SD2704K Features Dimensions (Unit mm) 1) High DC current gain. 2SD2704K hFE = 820 to 2700 SOT-346 2.9 1.1 2) High emitter-base voltage. VEBO = 25V (Min.) 0.4 0.8 3) Low Ron (3) Ron= 0.7 (Typ.) Structure Epitaxial planar type NPN silicon transistor ( ) ( ) 2 1 0.95 0.95 (1) Emitter 0.15 (2) Base 1.9 (3) Collector Each lea

For Muting (20V, 0.3A) 2SD2704K / 2SD2705S Features Dimensions (Unit mm) 1) High DC current gain. 2SD2704K hFE = 820 to 2700 2.9 1.1 2) High emitter-base voltage. 0.4 0.8 VEBO = 25V (Min.) (3) 3) Low Ron Ron= 0.7 (Typ.) (2) (1) Structure 0.95 0.95 (1) Emitter 0.15 Epitaxial planar type (2) Base 1.9 (3) Collector NPN silicon transistor Each lead ha

2SD2701 Transistors Low frequency amplifier 2SD2701 Dimensions (Unit mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) 350mV At IC = 1A / IB = 50mA ROHM TUMT3 Abbreviated symbol FZ (1) Base (2) Emitter (3) Collector Packaging specifications Absolute maximum ratings (Ta=25 C) Parameter Symbol Limit

2SD2700 Transistors Low frequency amplifier 2SD2700 Dimensions (Unit mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) 180mV at IC = 1A / IB = 50mA ROHM TUMT3 Abbreviated symbol FW (1) Base (2) Emitter (3) Collector Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base volta

2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Features External dimensions (Unit mm) 1) High DC current gain. 2SD2707 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. 1.2 0.2 0.8 0.2 (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) (2) (3) (1) (1) Base