TTB001 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TTB001
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 36 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 9 MHz
Capacitancia de salida (Cc): 90 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: TFP
- Selección de transistores por parámetros
TTB001 Datasheet (PDF)
ttb001.pdf

TTB001 TOSHIBA Transistor Silicon PNP Diffused Type TTB001 Audio Frequency Power Amplifier Application Unit: mm Low collector saturation voltage : VCE (sat) = -1.7 V (max) High power dissipation : PC = 36 W (Tc = 25C) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -60 VCollector-emitter voltage VCEO -60 VEm
ttb002.pdf

TTB002 TOSHIBA Transistor Silicon PNP Diffused Type (PCT process) TTB002 Audio Frequency Power Amplifier Application Unit: mm Low collector saturation voltage : VCE (sat) = -0.5 V (max) High power dissipation : PC = 30 W (Tc = 25C) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -60 VCollector-emitter voltage
ttb002 .pdf

TTB002 TOSHIBA Transistor Silicon PNP Diffused Type (PCT process) TTB002 Audio Frequency Power Amplifier Application Unit: mm Low collector saturation voltage : VCE (sat) = -0.5 V (max) High power dissipation : PC = 30 W (Tc = 25C) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -60 VCollector-emitter voltage
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: BCR135W | NKT108 | 2N5862 | DTC123JEB | 2SB443A | KRC663U | 2SC765
History: BCR135W | NKT108 | 2N5862 | DTC123JEB | 2SB443A | KRC663U | 2SC765



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
tip35c datasheet | 2n5401 datasheet | mj21194g | irfz34n | mn2488 | irfb438 | mj21193g | irf3710 pinout