TTB001 Specs and Replacement
Type Designator: TTB001
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 36 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 9 MHz
Collector Capacitance (Cc): 90 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TFP
TTB001 Substitution
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TTB001 datasheet
TTB001 TOSHIBA Transistor Silicon PNP Diffused Type TTB001 Audio Frequency Power Amplifier Application Unit mm Low collector saturation voltage VCE (sat) = -1.7 V (max) High power dissipation PC = 36 W (Tc = 25 C) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -60 V Em... See More ⇒
TTB002 TOSHIBA Transistor Silicon PNP Diffused Type (PCT process) TTB002 Audio Frequency Power Amplifier Application Unit mm Low collector saturation voltage VCE (sat) = -0.5 V (max) High power dissipation PC = 30 W (Tc = 25 C) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage ... See More ⇒
TTB002 TOSHIBA Transistor Silicon PNP Diffused Type (PCT process) TTB002 Audio Frequency Power Amplifier Application Unit mm Low collector saturation voltage VCE (sat) = -0.5 V (max) High power dissipation PC = 30 W (Tc = 25 C) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage ... See More ⇒
Detailed specifications: 2SD2536, 2SD2584, 2SD2604, 2SD2636, 2SD2686, 2SD2695, 2SD2719, TPCP8L01, MJE350, TTB002, 2SA673AKC, 2SA673AKD, 2SC1213AKC, 2SC1213AKD, 2SC2618C, 2SD2655, 2SC4702
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