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HIT562 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HIT562
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.8 W
   Tensión colector-base (Vcb): 45 V
   Tensión colector-emisor (Vce): 25 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 85
   Paquete / Cubierta: TO92MOD
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HIT562 Datasheet (PDF)

 0.1. Size:72K  renesas
 r07ds0448ej hit562-1.pdf pdf_icon

HIT562

Preliminary Datasheet R07DS0448EJ0400HIT562 (Previous: REJ03G1503-0300)Rev.4.00Silicon PNP Epitaxial Jun 14, 2011Features Low frequency power amplifier Complementary pair with HIT468 Outline RENESAS Package code: PRSS0003DC-A(Package name: TO-92 Mod)1. Emitter2. Collector3. Base321Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit

 9.1. Size:143K  blue-rocket-elect
 hit5609.pdf pdf_icon

HIT562

HIT5609(3DG5609) NPN /SILICON NPN TRANSISTOR :, Purpose: Power amplifier and switching application, electronic governor applications. :, HIT5610(3CG5610) Features: Low saturation voltage, complementary pair with HIT5610(3CG5610). /Absolute maximum ratings(Ta=25

 9.2. Size:138K  blue-rocket-elect
 hit5610.pdf pdf_icon

HIT562

HIT5610(3CG5610) PNP /SILICON PNP TRANSISTOR :, Purpose: Power amplifier and switching electronic application, governor applications. :, HIT5609(3DG5609) Features: Low saturation voltage, complementary pair with HIT5609(3DG5609). /Absolute maximum ratings(Ta=25

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: KMBTA05 | 2SC706 | DTA602 | 2SC1400U | ECG311

 

 
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