15C01C Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 15C01C
Código: YP
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 20 V
Tensión colector-emisor (Vce): 15 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.7 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 330 MHz
Capacitancia de salida (Cc): 3.2 pF
Ganancia de corriente contínua (hFE): 300
Encapsulados: CP
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15C01C datasheet
15c01c.pdf
Ordering number ENN7504 15C01C NPN Epitaxial Planar Silicon Transistor 15C01C Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency Amplifier, muting circuit. unit mm 2018B [15C01C] Features Large current capacitance. 0.4 0.16 3 Low collector-to-emitter saturation voltage (resistance). RCE (sat) typ.=0.58 [IC=0.7A
15c01c.pdf
Ordering number EN7504A 15C01C Bipolar Transistor http //onsemi.com ( ) 15V, 0.7A, Low VCE sat NPN Single CP Applications Low-frequency Amplifier, muting circuit Features Large current capacity Low collector-to-emitter saturation voltage (resistance) RCE (sat) typ.=0.58 [IC=0.7A, IB=35mA] Ultrasmall package facilitates miniaturization in end products Small
15c01ss.pdf
Ordering number ENN7508 15C01SS NPN Epitaxial Planar Silicon Transistor 15C01SS Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency Amplifier, muting circuit. unit mm 2159A [15C01SS] Features Top View Side View Large current capacitance. 1.4 Low collector-to-emitter saturation voltage (resistance). 0.1 0.25 RCE (s
Otros transistores... 2SC2618C , 2SD2655 , 2SC4702 , 2SB1691 , HIT468 , HIT667 , HIT562 , HIT647 , 2N3904 , 2SA1179N , 2SA1768 , 2SA2040 , 2SA2127 , 2SA2186 , 2SA2205 , 2SA2210 , 2SA2222SG .
History: 12A02CH | 2SC3342
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