15C01C Specs and Replacement
Type Designator: 15C01C
SMD Transistor Code: YP
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 330 MHz
Collector Capacitance (Cc): 3.2 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Package: CP
15C01C Substitution
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15C01C datasheet
Ordering number ENN7504 15C01C NPN Epitaxial Planar Silicon Transistor 15C01C Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency Amplifier, muting circuit. unit mm 2018B [15C01C] Features Large current capacitance. 0.4 0.16 3 Low collector-to-emitter saturation voltage (resistance). RCE (sat) typ.=0.58 [IC=0.7A... See More ⇒
Ordering number EN7504A 15C01C Bipolar Transistor http //onsemi.com ( ) 15V, 0.7A, Low VCE sat NPN Single CP Applications Low-frequency Amplifier, muting circuit Features Large current capacity Low collector-to-emitter saturation voltage (resistance) RCE (sat) typ.=0.58 [IC=0.7A, IB=35mA] Ultrasmall package facilitates miniaturization in end products Small... See More ⇒
Ordering number ENN7508 15C01SS NPN Epitaxial Planar Silicon Transistor 15C01SS Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Low-frequency Amplifier, muting circuit. unit mm 2159A [15C01SS] Features Top View Side View Large current capacitance. 1.4 Low collector-to-emitter saturation voltage (resistance). 0.1 0.25 RCE (s... See More ⇒
Detailed specifications: 2SC2618C , 2SD2655 , 2SC4702 , 2SB1691 , HIT468 , HIT667 , HIT562 , HIT647 , 2N3904 , 2SA1179N , 2SA1768 , 2SA2040 , 2SA2127 , 2SA2186 , 2SA2205 , 2SA2210 , 2SA2222SG .
Keywords - 15C01C pdf specs
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