2SA2210 Todos los transistores

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2SA2210 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA2210

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 20 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 140 MHz

Capacitancia de salida (Cc): 215 pF

Ganancia de corriente contínua (hfe): 150

Empaquetado / Estuche: TO220ML

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2SA2210 Datasheet (PDF)

1.1. 2sa2210-1e.pdf Size:176K _update

2SA2210
2SA2210

Ordering number : ENA0667B 2SA2210 Bipolar Transistor http://onsemi.com – – ( ) 50V, 20A, Low VCE sat PNP TO-220F-3SG Applications • Relay drivers, lamp drivers, motor drivers. Features • Adoption of MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching Specifications Absolute Maximum Ratings at Ta=25°C Pa

1.2. 2sa2210.pdf Size:53K _sanyo

2SA2210
2SA2210

Ordering number : ENA0667 2SA2210 SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2210 High-Current Switching Applications Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Rating

4.1. 2sa2214 090421.pdf Size:126K _toshiba

2SA2210
2SA2210

2SA2214 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2214 High-Speed Switching Applications Unit: mm DC-DC Converter Applications 2.10.1 Strobe Applications 1.70.1 High DC current gain: hFE = 200 to 500 (IC = -1.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.14 V (max) 1 High-speed switching: tf = 37 ns (typ.) 3 2 Absolute Maximum Ratings (Ta = 2

4.2. 2sa2219 090928.pdf Size:165K _toshiba

2SA2210
2SA2210

2SA2219 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2219 0 Audio Frequency Amplifier Applications Unit: mm High collector voltage : VCEO = -160 V (min) Small collector output capacitance : Cob = 17pF (typ.) High transition frequency : fT = 100MHz (typ.) Complementary to 2SC6139 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base

4.3. 2sa2215 090421.pdf Size:125K _toshiba

2SA2210
2SA2210

2SA2215 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2215 High-Speed Switching Applications Unit: mm DC-DC Converter Applications 2.10.1 Strobe Applications 1.70.1 High DC current gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) 1 High-speed switching: tf = 40 ns (typ.) 3 2 Absolute Maximum Ratings (Ta = 2

Otros transistores... HIT647 , 15C01C , 2SA1179N , 2SA1768 , 2SA2040 , 2SA2127 , 2SA2186 , 2SA2205 , D882 , 2SA2222SG , 2SA608N , 2SC2812N , 2SC536N , 2SC6098 , 2SC6099 , CPH3101 , CPH3107 .

 


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