2SA2210 - описание и поиск аналогов

Ordering number ENA0667 2SA2210 SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2210 High-Current Switching Applications Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute M

Ordering number ENA0667B 2SA2210 Bipolar Transistor http //onsemi.com ( ) 50V, 20A, Low VCE sat PNP TO-220F-3SG Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching Specifications Absolute Maximum Ratings at Ta=25 C Pa

isc Silicon PNP Power Transistor 2SA2210 DESCRIPTION Large current capacitance High-speed switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -50 V CBO V Collector-Em

Ordering number ENA0667B 2SA2210 Bipolar Transistor http //onsemi.com ( ) 50V, 20A, Low VCE sat PNP TO-220F-3SG Applications Relay drivers, lamp drivers, motor drivers. Features Adoption of MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching Specifications Absolute Maximum Ratings at Ta=25 C Pa

2SA2219 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2219 Audio Frequency Amplifier Applications Unit mm High collector voltage VCEO = 160 V (min) Small collector output capacitance Cob = 17pF (typ.) High transition frequency fT = 100MHz (typ.) Complementary to 2SC6139 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit

2SA2215 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2215 High-Speed Switching Applications Unit mm DC-DC Converter Applications 2.1 0.1 Strobe Applications 1.7 0.1 High DC current gain hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage VCE (sat) = -0.19 V (max) 1 High-speed switching tf = 40 ns (typ.) 3 2 Absolute Maximum Rati

2SA2214 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2214 High-Speed Switching Applications Unit mm DC-DC Converter Applications 2.1 0.1 Strobe Applications 1.7 0.1 High DC current gain hFE = 200 to 500 (IC = -1.5 A) Low collector-emitter saturation voltage VCE (sat) = -0.14 V (max) 1 High-speed switching tf = 37 ns (typ.) 3 2 Absolute Maximum Rati