PCP1208 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PCP1208Ordering number : ENA1836SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorPCP1208LED Back LightFeatures VCEO=200V, IC=0.7A High allowable power dissipation Halogen free compliance Low collector-to-emitter saturation voltage VCE(sat)=0.115V(typ.)@IC=0.35A High-speed switching tf=70ns(typ.)@IC=0.3ASpecifications at Ta=25C

Ordering number : ENA1836BPCP1208Bipolar Transistor http://onsemi.com200V, 0.7A Low VCE(sat) NPN Single PCPFeatures VCEO=200V, IC=0.7A High allowable power dissipation Halogen free compliance Low collector-to-emitter saturation voltage VCE(sat)=0.115V(typ.)@IC=0.35A High-speed switching tf=70ns(typ.)@IC=0.3ASpecificationsAbsolute Maximum Ratings at Ta=25

PCP1203Ordering number : ENA1348SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorPCP1203DC / DC Converter ApplicationsApplications DC / DC converters, relay drivers, lamp drivers, motor drivers, Inverters, IGBT gate drivers.Features Adoption of FBET, MBIT processes. High current capacitance. Low collector-to-emitter saturation voltage.

Ordering number : ENA1348APCP1203Bipolar Transistorhttp://onsemi.com( )30V, 1.5A, Low VCE sat , NPN Single PCPApplications DC / DC converters, relay drivers, lamp drivers, motor drivers, Inverters, IGBT gate driversFeatures Adoption of FBET, MBIT processes Large current capacity Low collector-to-emitter saturation voltage High speed switching High a