SFT1202 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SFT1202
   Código: T1202
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 15 W
   Tensión colector-base (Vcb): 180 V
   Tensión colector-emisor (Vce): 150 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 140 MHz
   Capacitancia de salida (Cc): 12 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: TP

Búsqueda de reemplazo de transistor bipolar SFT1202

SFT1202 Datasheet (PDF)

..1. Size:57K sanyo
sft1202.pdf

Ordering number : ENA1169 SFT1202SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorSFT1202High-Voltage Switching ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter.Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switch

..2. Size:413K onsemi
sft1202.pdf

Ordering number : ENA1169ASFT1202Bipolar Transistorhttp://onsemi.com( )150V, 2A, Low VCE sat , NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverterFeatures Adoption of FBET, MBIT process Large current capacity Low collector-to-emitter saturation voltage High-speed switching High allowable power diss

..3. Size:250K inchange semiconductor
sft1202.pdf

isc Silicon NPN Power Transistor SFT1202DESCRIPTIONLow Collector-Emitter Saturation Voltage-: V )= 0.165V(Max)( I = 1A; I = 0.1A)CE(sat C BFast -Switching speedHigh allowable power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDC/DC converterRelay dirversLamp dirversMotor dirversinverterABSO

0.1. Size:305K onsemi
sft1202-e.pdf