2SD2642 Todos los transistores

C Equivalent circuit B Darlington 2SD2642 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687) Application Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol Ratings Symbol Conditions Ratings Unit Unit 0.2 4.2 0.2 10.1 c0.5 VCBO 110 ICB

isc Silicon NPN Darlington Power Transistor 2SD2642 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 110V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 5A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 5A, I = 5mA) CE(sat) C B Complement to Type 2SB1687 Minimum Lot-to-Lot variations for robust device performance and reliable op

Ordering number ENN6679A 2SD2649 NPN Triple Diffused Planar Silicon Transistor 2SD2649 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SD2649] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1 Bas

Ordering number ENN6922 2SD2646 NPN Triple Diffused Planar Silicon Transistor 2SD2646 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SD2646] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1 Bas

Ordering number ENN6897A 2SD2645 NPN Triple Diffused Planar Silicon Transistor 2SD2645 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SD2645] Adoption of MBIT process. 5.6 3.4 16.0 On-chip damper diode. 3.1 2.8 2.

Ordering number ENN6923 2SD2648 NPN Triple Diffused Planar Silicon Transistor 2SD2648 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SD2648] Adoption of MBIT process. 5.6 3.4 16.0 3.1 2.8 2.0 2.1 0.9 0.7 1 2 3 1 Bas

C Equivalent circuit B Darlington 2SD2643 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687) Application Audio, Series Regulator and General Purpose (Ta=25 C) Absolute maximum ratings (Ta=25 C) Electrical Characteristics External Dimensions FM100(TO3PF) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO

Equivalent circuit C B Darlington 2SD2641 (70 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1685) Application Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Ratings Symbol Ratings Symbol Conditions Unit Unit 0.2 4.8 0.4 15.6 100max A VCB

isc Silicon NPN Power Transistor 2SD2645 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT