2SC4546 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC4546 Silicon NPN Triple Diffused Planar Transistor (High Voltage and Ultra-high Speed Switchihg Transistor) Application Switching Regulator, Lighting Inverter and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SC4546 Unit Symbol Conditions 2SC4546 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 600 V IC

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4546 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, lighting inverter and general purpose applications. ABSOLUTE MAX

2SC4540 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4540 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = 0.5 V (max) (I = 500 mA) C High speed switching time t = 0.4 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1735 Ma

2SC4541 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4541 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = 0.5 V (max) (I C = 1.5 A) High speed switching time t = 0.5 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1736 Max

Ordering number EN3712 NPN Planar Silicon Darlington Transistor 2SC4547 85V/3A Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit mm drivers, printer hammer drivers, relay drivers). 2010C [2SC4169] 10.2 4.5 Features 3.6 5.1 1.3 High DC current gain. Large current capacity and Wide ASO. Contains Zener diode of

Ordering number EN3188 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffuesd Planar Silicon Transistor 2SA1740/2SC4548 High-Voltage Driver Applications Features Package Dimensions High breakdown votlage. unit mm Adoption of MBIT process. 2038 Excellent hFE linearlity. [2SA1740/2SC4548] E Emitter C Collector B Base ( ) 2SA1740 SANYO PCP (Bottom view)

MCC 2SC4548-D TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components 2SC4548-E CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Small Flat Package NPN Epitaxial Low collector-to-emitter saturation voltage. Fast switching speed. Planar Silicon Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level

MCC 2SC4548-D TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components 2SC4548-E CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Small Flat Package NPN Epitaxial Low collector-to-emitter saturation voltage. Fast switching speed. Planar Silicon Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level

Power Transistors 2SC4545 Silicon NPN epitaxial planar type For medium output power amplification Unit mm 7.5 0.2 4.5 0.2 Features Allowing supply with the radial taping 0.65 0.1 0.85 0.1 0.8 C 0.8 C 1.0 0.1 0.7 0.1 0.7 0.1 Absolute Maximum Ratings Ta = 25 C 1.15 0.2 1.15 0.2 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V 0.

Transistor 2SC4543 Silicon NPN epitaxial planer type For video amplifier Unit mm 1.5 0.1 4.5 0.1 1.6 0.2 Features High transition frequency fT. Small collector output capacitance Cob. 45 Wide current range. 0.4 0.08 0.4 0.04 0.5 0.08 1.5 0.1 Absolute Maximum Ratings (Ta=25 C) 3.0 0.15 Parameter Symbol Ratings Unit 3 2 1 Collector to base voltage VCBO 110

Transistor 2SC4543 Silicon NPN epitaxial planer type For video amplifier Unit mm 1.5 0.1 4.5 0.1 1.6 0.2 Features High transition frequency fT. Small collector output capacitance Cob. 45 Wide current range. 0.4 0.08 0.4 0.04 0.5 0.08 1.5 0.1 Absolute Maximum Ratings (Ta=25 C) 3.0 0.15 Parameter Symbol Ratings Unit 3 2 1 Collector to base voltage VCBO 110

UNISONIC TECHNOLOGIES CO., LTD 2SC4548 NPN SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION FEATURES *High breakdown voltage. *Excellent hFE linearity. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC4548L-x-AB3-R 2SC4548G-x-AB3-R SOT-89 B C E Tape Reel Note Pin Assignment E EMITTER C COLLECTOR B BASE www.un

2SC454 Silicon NPN Epitaxial Application High frequency amplifier, mixer Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC454 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Collector power dissipation PC 200 mW Junc

2SC4548 0.2A , 400V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 Small Flat Package High Breakdown Voltage 1 2 Excellent hFE Linearity 3 B C A E E C CLASSIFICATION OF hFE B D Product-Rank 2SC4548-D 2SC4548-E F G H K Range 60 120 100 200 J L M

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC4548 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Breakdown Voltage 3. EMITTER Excellent hFE Linearity MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V VCEO Collector-Emit

2SC4548 SOT-89-3L TRANSISTOR(NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Breakdown Voltage 3. EMITTER Excellent hFE Linearity MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current 200 mA PC Collector Pow

2SC4544(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features High voltage V (BR) CEO = 300 V Small collector output capacitance Cob = 3.0 pF (typ.) Collector metal (fin) is fully covered with mold resin. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V Dimensions in inches an

2SC4548 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS(TA=25 C Unless Otherwise Noted) Rating Symbol Value Unit VCBO 400 V Collector to Base Voltage VCEO 400 V Collector to Emitter Voltage V VEBO 5 Emitter to Base Voltage IC Collector Current (DC) 200 mA PD 500 mW Total Device Disspation TA=25 C

ST 2SC4541U NPN Silicon Epitaxial Planar Transistor for power switching and power amplifier applications Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 80 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 6 V Collector Current IC 3 A Current IB 0.6 A Base 0.5 Ptot W Total Power Dissipation 1 1) Junction Te

SMD Type Transistors NPN Transistors 2SC4540 1.70 0.1 Features Low saturation voltage High speed switching time Small flat package 0.42 0.1 0.46 0.1 PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1735 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO

SMD Type Transistors NPN Transistors 2SC4543 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.15A Collector Emitter Voltage VCEO=50V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 110 Collector - Emitter voltage VCER 100 REB = 1.2K V Collect

SMD Type Transistors NPN Transistors 2SC4548 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.2A Collector Emitter Voltage VCEO=400V Complementary to 2SA1740 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - Emitter Voltage VCEO

SMD Type Transistors NPN Transistors 2SC4541 1.70 0.1 Features Low saturation voltage High speed switching time Small flat package 0.42 0.1 0.46 0.1 PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1736 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO

isc Silicon NPN Power Transistor 2SC4544 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Small Collector Ouptut Capacitance Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage switching and amplifier applications. Color TV horizontal driver applications. Color TV chroma output applications.

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4549 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = 2V , I = 1A) FE CE C Low Saturation Voltage- V = 0.3V(Max)@ (I = 3A, I = 0.15A) CE(sat) C B 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable ope

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4542 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display. High speed switching regulator output applications. A