2SAR533P Todos los transistores

 

2SAR533P Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SAR533P
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.5 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 300 MHz
   Capacitancia de salida (Cc): 24 pF
   Ganancia de corriente contínua (hfe): 180
   Paquete / Cubierta: MPT3

 Búsqueda de reemplazo de transistor bipolar 2SAR533P

 

Principales características: 2SAR533P

 ..1. Size:1667K  rohm
2sar533p.pdf pdf_icon

2SAR533P

2SAR533P Data Sheet PNP -3.0A -50V Middle Power Transistor lOutline MPT3 Parameter Value VCEO -50V Base IC -3.0A Collector Emitter 2SAR533P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SCR533P 3) Low VCE(sat) VCE(sat)= -0.4V Max. (IC/IB= -1A/ -50mA) 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplicatio

 0.1. Size:1560K  rohm
2sar533pfra.pdf pdf_icon

2SAR533P

2SAR533P FRA Datasheet Middle Power Transistor(-50V / -3A) AEC-Q101 Qualified lOutline l SOT-89 Parameter Value SC-62 VCEO -50V IC -3A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage VCE(sat)=-400mV(Max.) (IC/IB=-1A/-50mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPack

 0.2. Size:1823K  rohm
2sar533p5.pdf pdf_icon

2SAR533P

2SAR533P5 Datasheet Medium Power Transistors(-50V / -3A) lOutline l SOT-89 Parameter Value SC-62 VCEO -50V IC -3A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage,typically VCE(sat)=-400mV(Max.) (IC/IB=-1A/-50mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging specif

 7.1. Size:421K  rohm
2sar533d.pdf pdf_icon

2SAR533P

Midium Power Transistors ( 50V / 3A) 2SAR533D Features Dimensions (Unit mm) 1) Low saturation voltage, typically CPT3 6.5 5.1 2.3 VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA) 0.5 (2) 2) High speed switching 0.75 (3) (1) Structure 0.65 (1) Base 0.9 2.3 2.3 (1) (2) (3) 0.5 PNP Silicon epitaxial planar transistor (2) Collector 1.0 (3) Emitter In

Otros transistores... 2SAR514R , 2SAR522EB , 2SAR522M , 2SAR522UB , 2SAR523EB , 2SAR523M , 2SAR523UB , 2SAR533D , TIP31C , 2SAR542D , 2SAR542P , 2SAR543D , 2SAR543R , 2SAR544D , 2SAR544P , 2SAR544R , 2SAR552P .

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