2SAR543D Todos los transistores

Midium Power Transistors (-50V / -4A) 2SAR543D Structure Dimensions (Unit mm) PNP Silicon epitaxial planar transistor CPT3 (SC-63) Features 1) Low saturation voltage VCE (sat) = -0.4V (Max.) (IC / IB= -2A / -100mA) 2) High speed switching (1) Base 9 Applications (2) Collector (3) Emitter

Midium Power Transistors (-50V / -3A) 2SAR543R Structure Dimensions (Unit mm) PNP Silicon epitaxial planar transistor TSMT3 Features 1) Low saturation voltage (3) VCE (sat) = -0.4V (Max.) (IC / IB= -2A / -100mA) 2) High speed switching (1) (2) (1) Base Applications (2) Emitter (3) Collector Abbreviated symbol MR Driver Packaging specifications Inner

2SAR544P Data Sheet PNP -2.5A -80V Middle Power Transistor lOutline MPT3 Parameter Value VCEO -80V Base Collector IC -2.5A Emitter 2SAR544P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SCR544P 3) Low VCE(sat) VCE(sat)= -0.4V Max. (IC/IB= -1A/ -50mA) 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplication

Midium Power Transistors (-80V / -2.5A) 2SAR544D Features Dimensions (Unit mm) 1) Low saturation voltage, typically CPT3 6.5 (SC-63) 5.1 2.3 VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA) 0.5 2) High speed switching Structure PNP Silicon epitaxial planar transistor 0.75 0.65 0.9 2.3 (1) (2) (3) 2.3 0.5 Applications 1.0 Driver Packaging spe

2SAR544P 2SAR544PFRA Data Sheet PNP -2.5A -80V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO -80V Base Collector IC -2.5A Emitter 2SAR544PFRA 2SAR544P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SCR544P 2SCR544PFRA 3) Low VCE(sat) VCE(sat)= -0.4V Max. (IC/IB= -1A/ -50mA) 4) Lead Free/RoHS

2SAR542F3 Datasheet PNP -3.0A -30V Middle Power Transistor lOutline l Parameter Value HUML2020L3 VCEO -30V IC -3A 2SAR542F3 lFeatures l lInner circuit l 1) Suitable for Middle Power Driver. 2) Low VCE(sat) VCE(sat)=-0.20V(Max.). (IC/IB=-1A/-50mA) 3) High collector current. IC=-3A(max),

2SAR542P Data Sheet PNP -5.0A -30V Middle Power Transistor lOutline MPT3 Parameter Value VCEO -30V Base Collector IC -5.0A Emitter 2SAR542P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2) Complementary NPN Types 2SCR542P 3) Low VCE(sat) VCE(sat)= -0.4V Max. (IC/IB= -2A/ -100mA) 4) Lead Free/RoHS Compliant. lInner circuit Collector lApplications

2SAR542P FRA Datasheet Middle Power Transistor (-30V / -5A) AEC-Q101 Qualified lOutline l SOT-89 Parameter Value SC-62 VCEO -30V IC -5A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage VCE(sat) =-400mV (Max.) (IC/IB=-2A/-100mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING l

Midium Power Transistors (-30V / -5A) 2SAR542D Structure Dimensions (Unit mm) PNP Silicon epitaxial planar transistor CPT3 (SC-63) Features 1) Low saturation voltage VCE (sat) = -0.4V (Max.) (IC / IB= -2A / -100mA) 2) High speed switching (1) Base 9 Applications (2) Collector (3) Emitter

2SAR544R Datasheet PNP -2.5A -80V Middle Power Transistor lOutline l SOT-346T Parameter Value SC-96 VCEO -80V IC -2.5A TSMT3 lFeatures lInner circuit l l 1)Suitable for Middle Power Driver 2)Complementary NPN Types 2SCR544R 3)Low VCE(sat) VCE(sat)=-400mV (Max.) (IC/IB=-1A/-50mA) lApplication l LOW FREQUENCY AMPLIFIER, HIGH