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2SB1698 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SB1698
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.5 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 1.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 280 MHz
   Capacitancia de salida (Cc): 13 pF
   Ganancia de corriente contínua (hfe): 270
   Paquete / Cubierta: MPT3 SC-62 SOT-89
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2SB1698 Datasheet (PDF)

 ..1. Size:117K  rohm
2sb1698.pdf pdf_icon

2SB1698

2SB1698 Transistors Low frequency amplifier 2SB1698 Dimensions (Unit : mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) -370mV at IC =-1A / IB =-50mA Each lead has same dimensionsROHM : MPT3 (1)Base JEITA : SC-62(2)Collector JEDEC: SOT-89(3)Emitter Abbreviated symbol: FL Packaging specifications

 8.1. Size:77K  renesas
2sb1691.pdf pdf_icon

2SB1698

2SB1691 Silicon PNP Epitaxial Planer Low Frequency Power Amplifier REJ03G0482-0200 (Previous ADE-208-1387A (Z)) Rev.2.00 Dec.09.2004 Features Small size package: MPAK (SC59A) Large Maximum current: IC = 1 A Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) High power dissipation: PC = 800 mW (when usi

 8.2. Size:88K  renesas
r07ds0272ej 2sb1691-1.pdf pdf_icon

2SB1698

Preliminary Datasheet 2SB1691 R07DS0272EJ0300(Previous: REJ03G0482-0200)Silicon PNP Epitaxial Planer Rev.3.00Low Frequency Power Amplifier Mar 28, 2011Features Small size package: MPAK (SC59A) Large Maximum current: IC = 1 A Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) High power dissipation:

 8.3. Size:68K  rohm
2sb1690.pdf pdf_icon

2SB1698

2SB1690 Transistors General purpose amplification(-12V, -2A) 2SB1690 Applications External dimensions (Unit : mm) Low frequency amplifier TSMT3Deiver 1.0MAX2.90.850.4 0.7 Features (3)1) A collector current is large. 2) Collector saturation voltage is low. (1) (2)VCE(sat) : max. -180mV 0.95 0.950.161.9at IC= -1A / IB= -50mA (1) Base (2) EmitterEa

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BSX74 | MM2550 | 2SC962 | 3DG12 | 2N6287G | CZT2907 | BEL406

 

 
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