2SB1732 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SB1732  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.4 W

Tensión colector-base (Vcb): 15 V

Tensión colector-emisor (Vce): 12 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 400 MHz

Capacitancia de salida (Cc): 12 pF

Ganancia de corriente contínua (hFE): 270

Encapsulados: TUMT3

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2SB1732 datasheet

 ..1. Size:105K  rohm
2sb1732.pdf pdf_icon

2SB1732

2SB1732 Transistors Genera purpose amplification(-12V, -1.5A) 2SB1732 Dimensions (Unit mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) -200mV ROHM TUMT3 Abbreviated symbol EV (1)Base at IC = -500mA / IB = -25mA (2)Emitter (3)Collector Packaging specifications

 8.1. Size:107K  rohm
2sb1733.pdf pdf_icon

2SB1732

2SB1733 Transistors General purpose amplification (-30V, -1A) 2SB1733 Dimensions (Unit mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) max. -350mV at Ic = -500mA / IB = -25mA ROHM TUMT3 Abbreviated symbol EW (1) Base (2) Emitter (3) Collector Packaging specification

 8.2. Size:105K  rohm
2sb1731.pdf pdf_icon

2SB1732

2SB1731 Transistors Low frequency amplifier 2SB1731 Dimensions (Unit mm) Application Low frequency amplifier Driver Features 1) A collector current is large. 2) VCE(sat) -370mV at IC =-1A / IB =-50mA ROHM TUMT3 Abbreviated symbol FL (1)Base (2)Emitter (3)Collector Packaging specifications Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Un

 8.3. Size:70K  rohm
2sb1730.pdf pdf_icon

2SB1732

2SB1730 Transistors General purpose amplification(-12V, -2A) 2SB1730 Applications Dimensions (Unit mm) Low frequency amplifier Deiver Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) -180mV at IC= -1A / IB= -50mA ROHM TUMT3 Abbreviated symbol FV (1) Base Packaging specifications (2) Emitter (3) Collector Packag

Otros transistores... 2SB1705, 2SB1706, 2SB1707, 2SB1708, 2SB1709, 2SB1710, 2SB1730, 2SB1731, A1013, 2SB1733, 2SB852K, 2SC2411K, 2SC2412K, 2SC2413K, 2SC3837K, 2SC3838K, 2SC3906K