2SC2411K
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2411K
Código: CP_CQ_CR
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-base (Vcb): 40
V
Tensión colector-emisor (Vce): 32
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 0.5
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250
MHz
Capacitancia de salida (Cc): 6.5
pF
Ganancia de corriente contínua (hfe): 120
Paquete / Cubierta:
SMT3
SC-59
Búsqueda de reemplazo de transistor bipolar 2SC2411K
2SC2411K
Datasheet (PDF)
..1. Size:1689K rohm
2sc2411k.pdf
2SC2411KDatasheetMedium Power Transistor (32V, 500mA)lOutlinelParameter Value SMT3VCEO32VIC500mA2SC2411KSOT-346 lFeaturesl1) High ICMAX lInner circuitl ICMAX=0.5A2)Low VCE(sat) Optimal for low voltage operation.3)Complements the 2SA1036K.lApplicationlDRIVING CIRCUIT, LOW FREQ
..2. Size:1663K wietron
2sc2411k.pdf
2SC2411KNPN General Purpose Transistors31P b Lead(Pb)-Free2SOT-23MAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitCollector-Emitter VoltageVCEO32 VVCBOCollector-Base Voltage 40 VVEBOEmitter-Base Voltage 5.0 VICCollector Current - Continuous 500 mATotal Device DissipationPD200 mWTA=25CTj CJunction Temperature +150TstgStorage Temperature -55 t
..3. Size:335K panjit
2sc2411k.pdf
2SC2411KNPN GENERAL PURPOSE SWITCHING TRANSISTORVOLTAGE 32 Volts POWER 225mWFEATURES0.120(3.04) NPN epitaxial silicon,planar design0.110(2.80) Collector-emitter voltage VCE=32V Collector current IC=500mA Lead free in comply with EU RoHS 2011/65/EU directives. Green molding compound as per IEC61249 Std. . (Halogen Free)0.056(1.40)0.047(1.20)MECHANICAL DAT
0.1. Size:931K rohm
2sc2411kfra.pdf
2SC2411KFRA2SC2411K TransistorsAEC-Q101 QualifiedMedium Power Transistor (32V, 0.5A) 2SC2411K 2SC2411KFRA Features External dimensions (Units : mm) 1) High ICMax.2SC2411KFRA2SC2411KICMax. = 0.5A2) Low VCE(sat).2.90.2Optimal for low voltage operation. 1.1+0.21.90.2 -0.10.80.10.95 0.952SA1036KFRA3) Complements the 2SA1036K. (1) (2)0 0.1(3)
0.2. Size:295K willas
2sc2411kxlt1.pdf
FM120-M WILLAS2SC2411KxLT1THRUMedium Power TransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order toNPN silicon
0.3. Size:173K lrc
l2sc2411kqlt1g.pdf
LESHAN RADIO COMPANY, LTD.Medium Power TransistorL2SC2411KQLT1GNPN silicon SeriesFEATURES-L2SC2411KQLT1G Epitaxial planar typeSeries Complementary to L2SA1036K We declare that the material of product are Halogen Free and3compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements,AEC-q101
0.4. Size:613K lrc
l2sc2411krlt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconL2SC2411KRLT1GFEATURESS-L2SC2411KRLT1G1) We declare that the material of product compliant with RoHS requirements and Halogen Free.32) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.12SOT 23 DEVICE MARK
0.5. Size:538K lrc
l2sc2411krlt1g l2sc2411krlt3g.pdf
L2SC2411KRLT1GS-L2SC2411KRLT1GGeneral Purpose Transistors NPN Silicon1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23 qualified and PPAP capable.2. DEVICE MARKING AND ORDERING INFORMATIONDevice Mark
0.6. Size:92K chenmko
2sc2411kgp.pdf
CHENMKO ENTERPRISE CO.,LTD2SC2411KGPSURFACE MOUNT Medium Power NPN Transistor VOLTAGE 32 Volts CURRENT 0.5 AmpereAPPLICATION* Medium Power Amplifier .FEATURE* Surface mount package. (SOT-23)SOT-23* Low saturation voltage V* Low cob. Cob=6.0pF(Typ.)CE(sat)=0.4V(max.)(IC=500mA) * PC= 200mW (mounted on ceramic substrate).* High saturation current capability.(1)CONST
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