2SC2412K Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC2412K 📄📄
Código: BQ_BR_BS
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 0.15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 180 MHz
Capacitancia de salida (Cc): 2 pF
Ganancia de corriente contínua (hFE): 120
Encapsulados: SMT3
SC-59
SOT-346
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2SC2412K datasheet
..1. Size:111K rohm
2sc2412k.pdf 
General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 Features Dimensions (Unit mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC4081 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029. 1.25 1.6 2.1 2.8 Structure Epitaxial planar type 0.1Min. 0.3Min. NPN silicon transistor Each lead has same dimensions Each lead
..2. Size:171K rohm
2sc2412k 2sc4081 2sc4617 2sc5658 2sc1740s.pdf
General purpose transistor (50V, 0.15A) 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Features Dimensions (Unit mm) 1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.) 2SC2412K 2SC4081 2SC4617 2. Complements the 2SA1037AK / 2SA1576A / 2SA1774H / 2SA2029 / 2SA933AS. (1) (2) (3) 1.25 1.6 0.8 2.1 2.8 1.6 Structure Epitaxial planar type 0.1Min. 0.1Min. 0.3Min. NPN
..3. Size:2718K rohm
2sc5658 2sc4617eb 2sc4617 2sc4081ub 2sc4081u3 2sc2412k.pdf
2SC5658 / 2SC4617EB / 2SC4617 2SC4081UB / 2SC4081U3 / 2SC2412K Datasheet General purpose small signal amplifier (50V, 150mA) lOutline l Parameter Value SC-105AA SOT-416FL VCEO 50V IC 150mA 2SC5658 2SC4617EB (VMT3) (EMT3F) lFeatures SOT-416 SOT-323FL l 1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/ 2SC4617 2SC4081UB 2SA1774EB/2SA
..4. Size:2688K rohm
2sc5658 2sc4617eb 2sc4617 2sc4081ub 2sc4081 2sc2412k.pdf
2SC5658 / 2SC4617EB / 2SC4617 2SC4081UB / 2SC4081 / 2SC2412K Datasheet General purpose small signal amplifier (50V, 150mA) lOutline l Parameter Value SC-105AA SOT-416FL VCEO 50V IC 150mA 2SC5658 2SC4617EB (VMT3) (EMT3F) lFeatures SOT-416 SOT-323FL l 1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA2029/ 2SC4617 2SC4081UB 2SA1774EB/2SA17
..5. Size:247K lge
2sc2412k sot-23-3l.pdf
2SC2412K SOT-23-3L Transistor(NPN) 1. BASE SOT-23-3L 2. EMITTER 2.92 3. COLLECTOR 0.35 1.17 Features Low Cob ,Cob = 2.0 pF (Typ). 2.80 1.60 Complements the 2SA1037AK MARKING BQ, BR, BS 0.15 1.90 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-E
..6. Size:1292K wietron
2sc2412k.pdf
2SC2412K NPN 3 1 2 SOT-23 Value V 50 CEO 60 7.0 150 200 1.6 625 T ,Tstg J 1.0 50 50 60 7.0 50 u 0.1 I O Vdc, E= E= 50 0 ) u 0.1 60 0.1 u 7.0 WEITRON 1/5 24-Jul-07 http //www.weitron.com.tw 2SC2412K ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain hF
..7. Size:1065K blue-rocket-elect
2sc2412k.pdf
2SC2412K Rev.FApr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Low Cob. / Applications General amplifier. / Equivalent Circuit / Pinning 3 1 2 PIN1 Base PIN
0.1. Size:1268K rohm
2sc2412kfra.pdf
2SC2412K FRA Datasheet General purpose small signal amplifier(50V, 150mA) AEC-Q101 Qualified lOutline l SOT-346 Parameter Value SC-59 VCEO 50V IC 150mA SMT3 lFeatures lInner circuit l l 1)Low Cob.Cob=2.0pF(Typ.) 2)Complements the 2SA1037AK FRA. lApplication l GENERAL PURPOSE SMALL SIGNAL AMPLIFIER
0.2. Size:339K willas
2sc2412kxlt1.pdf
FM120-M WILLAS 2SC2412KxLT1 THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product NPN Silicon Package outline We declare that the material of product compliance with RoHS requirements. Features Batch process design, excellent power dissipation offers better reverse leakage current and ther
0.3. Size:147K lrc
l2sc2412kqmt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. L2SC2412KQMT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC2412KQMT1G ORDERING INFORMATION Series Device Marking Shipping L2SC2
0.4. Size:127K lrc
l2sc2412kqlt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2412KQLT1G We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC2412KQLT1G ORDERING INFORMATION Series Device Marking Shipping L2SC2
0.5. Size:127K lrc
l2sc2412krlt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2412KQLT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. L2SC2412KQLT1G ORDERING INFORMATION Series Device Marking Shipping L2SC2412
0.6. Size:127K lrc
l2sc2412kqlt1g l2sc2412kqlt3g l2sc2412krlt1g l2sc2412krlt3g l2sc2412kslt1g l2sc2412kslt3g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2412KQLT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. L2SC2412KQLT1G ORDERING INFORMATION Series Device Marking Shipping L2SC2412
0.7. Size:138K lrc
l2sc2412ksmt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2412KQMT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC2412KQMT1G ORDERING INFORMATION Series Device Marking Shipping L2SC
0.8. Size:127K lrc
l2sc2412kslt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2412KQLT1G We declare that the material of product compliance with RoHS requirements. Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC2412KQLT1G ORDERING INFORMATION Series Device Marking Shipping L2SC2
0.9. Size:127K lrc
l2sc2412kqlt1g l2sc2412krlt1g l2sc2412kslt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon L2SC2412KQLT1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. L2SC2412KQLT1G ORDERING INFORMATION Series Device Marking Shipping L2SC2412
0.10. Size:141K lrc
l2sc2412krmt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon We declare that the material of product compliance with RoHS requirements. L2SC2412KQMT1G S- Prefix for Automotive and Other Applications Requiring Unique Site Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-L2SC2412KQMT1G ORDERING INFORMATION Series Device Marking Shipping L2SC2
0.11. Size:100K chenmko
2sc2412kgp.pdf
CHENMKO ENTERPRISE CO.,LTD 2SC2412KGP SURFACE MOUNT General Purpose Transistor VOLTAGE 50 Volts CURRENT 0.15 Ampere APPLICATION * Small Signal Amplifier . FEATURE * Surface mount package. (SOT-23) SOT-23 * Low saturation voltage V CE(sat)=-0.4V(max.)(IC=50mA) * Low cob. Cob=2.0pF(Typ.) * PC= 200mW (mounted on ceramic substrate). * High saturation current capability. (1) CONST
0.12. Size:238K slkor
2sc2412k-q 2sc2412k-r 2sc2412k-s.pdf
2SC2412K NPN Transistors 3 2 Features 1.Base Low Cob.Cob=2.0pF (Typ.) 2.Emitter 1 3.Collector Simplified outline(SOT-23) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V Collector current IC 0.15 A Collector power dissipation PC 0.2 W Junction temperature Tj 150
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