2SC5103 Datasheet. Equivalente

 ..1. Size:53K  rohm
 2sc5103.pdf

2SC5103 Transistors High speed switching transistor (60V, 5A) 2SC5103 External dimensions (Units mm) Features 1) Low VCE(sat) (Typ. 0.15V at IC / IB = 3 / 0.15A) 2) High speed switching (tf Typ. 0.1 s at IC = 3A) 5.5 1.5 3) Wide SOA. (safe operating area) 0.9 4) Complements the 2SA1952. C0.5 0.8Min. (1) Base(Gate) 1.5 2.5 (2) Collector(Drain) ROHM CPT3 9.5 (3) Emitt

 ..2. Size:210K  inchange semiconductor
 2sc5103.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5103 DESCRIPTION High Collector Current -I = 5A C Low Collector Saturation Voltage Complement to Type 2SA1952 Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for use in high speed switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

 8.1. Size:743K  1
 2sc500 2sc501 2sc502 2sc503 2sc504 2sc505 2sc506 2sc507 2sc508 2sc509 2sc510 2sc511.pdf

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 2sc510 2sc512.pdf

 8.3. Size:133K  toshiba
 2sc5108ft.pdf

2SC5108FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5108FT For VCO Application Unit mm Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 15 mA Collector current IC 30 mA Collector power dissipation PC 100 mW Junction tempera

 8.4. Size:242K  toshiba
 2sc5109.pdf

2SC5109 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5109 For VCO Application Unit mm Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 30 mA Collector current IC 60 mA Collector power dissipation PC 150 mW Junction temperature

 8.5. Size:242K  toshiba
 2sc5108.pdf

2SC5108 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5108 For VCO Application Unit mm Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 15 mA Collector current IC 30 mA Collector power dissipation PC 100 mW Junction temperature

 8.6. Size:241K  toshiba
 2sc5107.pdf

2SC5107 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5107 For VCO Application Unit mm Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 15 mA Collector current IC 30 mA Collector power dissipation PC 100 mW Junction temperature

 8.7. Size:238K  toshiba
 2sc5106.pdf

2SC5106 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5106 For VCO Application Unit mm Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 3 V Base current IB 15 mA Collector current IC 30 mA Collector power dissipation PC 150 mW Junction temperature

 8.8. Size:62K  panasonic
 2sc5104.pdf

Power Transistors 2SC5104 Silicon NPN triple diffusion planar type Unit mm 8.5 0.2 3.4 0.3 For high breakdown voltage high-speed switching 6.0 0.5 1.0 0.1 Features 1.5max. 1.1max. High-speed switching High collector to base voltage VCBO 0.8 0.1 0.5max. Wide area of safe operation (ASO) 2.54 0.3 Satisfactory linearity of foward current transfer ratio hFE 5.08 0.5 N

 8.9. Size:188K  jmnic
 2sc5100.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC5100 DESCRIPTION With TO-3PML package Complement to type 2SA1908 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta

 8.10. Size:188K  jmnic
 2sc5101.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC5101 DESCRIPTION With TO-3PML package Complement to type 2SA1909 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base volta

 8.11. Size:24K  sanken-ele
 2sc5100.pdf

2SC5100 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1908) Application Audio and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM100(TO3PF) 2SC5100 Unit Symbol 2SC5100 Unit Symbol Conditions 0.2 0.2 5.5 15.6 0.2 3.45 10max A VCBO 160 V ICBO VCB=160V VCEO 120 V VEB=6V IEBO 10max A

 8.12. Size:25K  sanken-ele
 2sc5101.pdf

2SC5101 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1909) Application Audio and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM100(TO3PF) Symbol 2SC5101 Unit Symbol Conditions 2SC5101 Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 200 V ICBO VCB=200V 10max A VCEO 140 V IEBO VEB=6V 10max A V

 8.13. Size:1076K  kexin
 2sc5109.pdf

SMD Type Transistors NPN Transistors 2SC5109 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=30mA 1 2 Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle

 8.14. Size:1250K  kexin
 2sc5106.pdf

SMD Type Transistors NPN Transistors 2SC5106 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=30mA 1 2 Collector Emitter Voltage VCEO=10V +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector

 8.15. Size:195K  inchange semiconductor
 2sc5100.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5100 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1908 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM

 8.16. Size:195K  inchange semiconductor
 2sc5101.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5101 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1909 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM