2SCR542P Todos los transistores

2SCR542P Datasheet Middle Power Transistor (30V / 5A) lOutline l SOT-89 Parameter Value SC-62 VCEO 30V IC 5A MPT3 lFeatures lInner circuit l l 1)Low saturation voltage,typically VCE(sat)=400mV(Max.) (IC/IB=2A/100mA) 2)High speed switching lApplication l LOW FREQUENCY AMPLIFIER, HIGH SPEED SWITCHING lPackaging specification

2SCR542PFRA 2SCR542P Data Sheet NPN 5.0A 30V Middle Power Transistor AEC-Q101 Qualified lOutline MPT3 Parameter Value VCEO 30V Base IC Collector 5.0A Emitter 2SCR542PFRA 2SCR542P lFeatures (SC-62) 1) Suitable for Middle Power Driver 2SAR542PFRA 2) Complementary PNP Types 2SAR542P 3) Low VCE(sat) VCE(sat)=0.4V Max. (IC/IB=2A/100mA) 4) Lead Free/RoHS Compliant

Midium Power Transistors (30V / 5A) 2SCR542D Structure Dimensions (Unit mm) NPN Silicon epitaxial planar transistor CPT3 (SC-63) Features 1) Low saturation voltage VCE (sat) = 0.4V (Max.) (IC / IB= 2A / 100mA) 2) High speed switching 9 (1) Base Applications (2) Collector (3) Emitter Driv

2SCR542F3 Datasheet NPN 3.0A 30V Middle Power Transistor lOutline l Parameter Value HUML2020L3 VCEO 30V IC 3A 2SCR542F3 lFeatures l lInner circuit l 1) Suitable for Middle Power Driver. 2) Low VCE(sat) VCE(sat)=0.20V(Max.). (IC/IB=1A/50mA) 3) High collector current. IC=3A(max),ICP=6A(m

isc Silicon NPN Power Transistors 2SCR542D DESCRIPTION DC Current Gain h 200-500@ I = 0.5A FE C Collector-Emitter Breakdown Voltage V = 30V(Min) (BR) CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA