2SD2673 Todos los transistores

 

2SD2673 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD2673

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Capacitancia de salida (Cc): 40 pF

Ganancia de corriente contínua (hFE): 270

Encapsulados: TSMT3

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2SD2673 datasheet

 ..1. Size:67K  rohm
2sd2673.pdf pdf_icon

2SD2673

2SD2673 Transistors Low frequency amplifier 2SD2673 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 (3) Features 1) A collector current is large. (3A) ( ) ( ) 2) VCE(sat) max. 250mV 1 2 0.95 0.95 0.16 At IC = 1.5A / IB = 30mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector P

 8.1. Size:59K  rohm
2sd2670.pdf pdf_icon

2SD2673

2SD2670 Transistors Low frequency amplifier 2SD2670 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 ( ) 3 Features 1) A collector current is large. ( ) ( ) 1 2 2) VCE(sat) max.250mV 0.95 0.95 0.16 At lc=1.5A / lB=30mA 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Abso

 8.2. Size:66K  rohm
2sd2671.pdf pdf_icon

2SD2673

2SD2671 Transistors Low frequency amplifier 2SD2671 External dimensions (Unit mm) Application Low frequency amplifier TSMT3 Driver 1.0MAX 2.9 0.85 0.4 0.7 ( ) 3 Features 1) A collector current is large. 2) VCE(sat) max. 370mV (1) (2) 0.95 0.95 At lc=1.5A / lB=75mA 0.16 1.9 (1) Base (2) Emitter Each lead has same dimensions (3) Collector Absolute maxi

 8.3. Size:76K  rohm
2sd2678.pdf pdf_icon

2SD2673

2SD2678 Transistors 3A / 12V Bipolar transistor 2SD2678 Applications Dimensions (Unit mm) Low frequency amplification, driver MPT3 Features 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE(sat) 250mV at IC = 1.5A, IB = 30mA) (1)Base (2)Collector Structure (3)Emitter Abbreviated symbol XX NPN epitaxial planar silicon transistor

Otros transistores... 2SD2656, 2SD2657K, 2SD2657, 2SD2661, 2SD2662, 2SD2670, 2SD2671, 2SD2672, BD335, 2SD2674, 2SD2675, 2SD2696, 2SD2700, 2SD2701, 2SD2702, 2SD2703, 2SD2704K

 

 

 


History: 2N1495A

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