DTA114EEB
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTA114EEB
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 40
V
Corriente del colector DC máxima (Ic): 0.05
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250
MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta:
SC-89
EMT3F
SOT416FL
Búsqueda de reemplazo de transistor bipolar DTA114EEB
DTA114EEB
Datasheet (PDF)
..1. Size:152K rohm
dta114eeb.pdf
100mA / 50V Digital transistors (with built-in resistors) DTA114EEB Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3F1.6 0.70.26 Features (3)1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors (1) (2)
6.1. Size:54K motorola
pdta114eef 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTA114EEFPNP resistor-equipped transistor1999 May 21Preliminary specificationSupersedes data of 1998 Nov 11Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA114EEFFEATURES PINNING Power dissipation comparable to SOT23PIN DESCRIPTION Built-in bias resistors R1 and R2 (typ. 10 k each)1
6.2. Size:57K motorola
pdta114ee 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA114EEPNP resistor-equipped transistorPreliminary specification 1998 Jul 23Supersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA114EEFEATURES Built-in bias resistors R1 and R2(typ. 10 k each) Simplification of circuit
6.3. Size:54K philips
pdta114eef 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTA114EEFPNP resistor-equipped transistor1999 May 21Preliminary specificationSupersedes data of 1998 Nov 11Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA114EEFFEATURES PINNING Power dissipation comparable to SOT23PIN DESCRIPTION Built-in bias resistors R1 and R2 (typ. 10 k each)1
6.4. Size:57K philips
pdta114ee 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA114EEPNP resistor-equipped transistorPreliminary specification 1998 Jul 23Supersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA114EEFEATURES Built-in bias resistors R1 and R2(typ. 10 k each) Simplification of circuit
6.5. Size:859K nxp
pdta114ee pdta114em pdta114et pdta114eu.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
6.6. Size:3896K rohm
dta114eefra dta114ekafra dta114emfha dta114euafra.pdf
DTA114E seriesDatasheetPNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC-50VIC(MAX.)-100mA R110kDTA114EM DTA114EEBR2 (SC-105AA) (SC-89)10k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 10k 2) Built-in bias resistors enable the configuration
6.7. Size:152K rohm
dta114ee.pdf
100mA / 50V Digital transistors (with built-in resistors) DTA114EM / DTA114EE / DTA114EUA / DTA114EKA Applications Inverter, Interface, Driver Features1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to
6.8. Size:227K diodes
ddta114ee.pdf
DDTA (R1 = R2 SERIES) EDDTA (R1 = R2 SERIES) E PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-523 Complementary NPN Types Available (DDTC) Dim Min Max Typ Built-In Biasing Resistors, R1 = R2 A 0.15 0.30 0.22 Lead Free/RoHS Compliant (Note 2) TOP VIEW B C B 0.75 0.85 0.80 "Green" Device (Note 3 and 4)
6.9. Size:156K onsemi
nsvdta114eet1g.pdf
MUN2111, MMUN2111L,MUN5111, DTA114EE,DTA114EM3, NSBA114EF3Digital Transistors (BRT)R1 = 10 kW, R2 = 10 kWhttp://onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (
6.10. Size:108K onsemi
dta114eet1.pdf
DTA114EET1 SeriesPreferred DevicesBias Resistor TransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic biasnetwork consisting of two r
6.11. Size:135K onsemi
dta114eet 6a-m sot416.pdf
DTA114EET1 SERIESPreferred DevicesBias Resistor TransistorPNP Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistorhttp://onsemi.comTransistor) contains a single transistor with a monolithic bias networkconsisting of two res
6.12. Size:222K onsemi
dta114eet1g dta114tet1g dta114yet1g dta115eet1g dta123eet1g dta123jet1g dta124eet1g dta124xet1g.pdf
DTA114EET1 Series,SDTA114EET1 SeriesPreferred DevicesBias Resistor TransistorsPNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor Networkhttp://onsemi.comThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The Bias ResistorTransistor (BRT) contains a single transistor with a monolithic bias PNP SIL
6.13. Size:342K htsemi
dta114eca dta114ee dta114esa dta114eua.pdf
DT A114EE/DTA114EUA/DTA114EKA /DTA114ESA/DTA114ECA Digital transistors (PNP)FEATURES 1. Built-in bias resistors enable the configuration of an inverter circuitwithout connecting external input resistors(see equivalent circuit). 2. The bias resistors consist of thin-film resistors with complete isolationto allow positive biasing of the input.They also have the advantage ofalmost co
6.14. Size:800K wietron
dta114ee.pdf
DTA114EE SeriesBias Resistor Transistor PNP Silicon33P b Lead(Pb)-FreeCOLLECTOR123R11R2BASESC-89(SOT-523F)2EMITTERMaximum Ratings (TA=25C unless otherwise noted)Rating Symbol Value UnitCollector-Emitter Voltage 50 VVCEOVCBO VCollector-Base Voltage 50mAIC 100Collector Current-ContinuousThermal CharacteristicsCharacteristics Symbol Max Unit
6.15. Size:437K willas
dta114ee.pdf
FM120-M WILLASTHRUDTA114EEPNP Digital Transistor FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize board spac
6.16. Size:770K lrc
ldta114eet1g ldta114tet1g ldta124xet1g ldta143eet1g ldta144eet1g.pdf
LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsLDTC114EET1G SeriesS-LDTC114EET1G SeriesNPN Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkcons
6.18. Size:1275K kexin
dta114ee.pdf
SMD Type TransistorsDigital TransistorsDTA114EE (KDTA114EE )SOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.05 Features Built-in bias resistors enable the configuration of an inverter circuit2 1 without connecting external input resistors(see equivalent circuit) The bias resistors consist of thin-film resistors with complete isolatio
6.19. Size:97K chenmko
chdta114eegp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTA114EEGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cu
Otros transistores... 2SA1801
, 2SA1802
, 2SA1802A
, 2SA1803
, 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, TIP35C
, 2SA1805
, 2SA1805O
, 2SA1805R
, 2SA1806
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
.