2N5849 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5849
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 48 V
Tensión colector-emisor (Vce): 24 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 7 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50 MHz
Capacitancia de salida (Cc): 230 pF
Ganancia de corriente contínua (hfe): 3
Paquete / Cubierta: TO128
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2N5849 Datasheet (PDF)
2n5838 2n5839 2n5840.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5838 2N5839 2N5840 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage APPLICATIONS For use in switching power supply applications and other inductive switching circuits. PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute max
2n5838 2n5839 2n5840.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5838 2N5839 2N5840 DESCRIPTION With TO-3 package Low collector saturation voltage High breakdown voltage APPLICATIONS For use in switching power supply and other inductive switching circuits. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 Collecto
Otros transistores... 2N5842 , 2N5843 , 2N5844 , 2N5845 , 2N5845A , 2N5846 , 2N5847 , 2N5848 , BC548 , 2N585 , 2N5850-2 , 2N5851 , 2N5852 , 2N5853 , 2N5854 , 2N5855 , 2N5856 .
History: 3DG2413K | 2SA1706T-AN | BC848CW-G | RT3YB7M | 2SA815 | 2SA795A
History: 3DG2413K | 2SA1706T-AN | BC848CW-G | RT3YB7M | 2SA815 | 2SA795A



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