DTA124XE Todos los transistores

 ..1. Size:686K  rohm
 dta124xe dta124xka.pdf

DTA124X series Datasheet PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline VMT3 EMT3 Parameter Value OUT OUT VCC -50V IN IN IC(MAX.) -100mA GND GND R1 22kW DTA124XM DTA124XE R2 (SC-105AA) 47kW SOT-416 (SC-75A) UMT3 SMT3 OUT lFeatures OUT 1) Built-In Biasing Resistors IN IN 2) Built-in bias resistors enable the configura

 0.1. Size:55K  motorola
 pdta124xe 3.pdf

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA124XE PNP resistor-equipped transistor Product specification 1999 May 21 Supersedes data of 1998 Nov 25 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124XE FEATURES Built-in bias resistors R1 and R2 (typ. 22 k and 47 k respectively) Simplification of circuit design Reduces number of

 0.2. Size:54K  motorola
 pdta124xef 2.pdf

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA124XEF PNP resistor-equipped transistor 1999 May 25 Preliminary specification Supersedes data of 1998 Nov 16 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA124XEF FEATURES PINNING Power dissipation comparable to SOT23 PIN DESCRIPTION Built-in bias resistors R1 and R2 (typ. 22 k and 47 k

 0.3. Size:55K  philips
 pdta124xe 3.pdf

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA124XE PNP resistor-equipped transistor Product specification 1999 May 21 Supersedes data of 1998 Nov 25 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124XE FEATURES Built-in bias resistors R1 and R2 (typ. 22 k and 47 k respectively) Simplification of circuit design Reduces number of

 0.4. Size:54K  philips
 pdta124xef 2.pdf

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA124XEF PNP resistor-equipped transistor 1999 May 25 Preliminary specification Supersedes data of 1998 Nov 16 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA124XEF FEATURES PINNING Power dissipation comparable to SOT23 PIN DESCRIPTION Built-in bias resistors R1 and R2 (typ. 22 k and 47 k

 0.5. Size:83K  nxp
 pdta124xef pdta124xk pdta124xs.pdf

PDTA124X series PNP resistor-equipped transistors; R1 = 22 k , R2 = 47 k Rev. 08 3 September 2009 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package NPN complement NXP JEITA JEDEC PDTA124XE SOT416 SC-75 - PDTC124XE PDTA124XEF SOT490 SC-89 - PDTC124XEF PDTA124XK SOT346 SC-

 0.6. Size:69K  rohm
 dta124xe-xua-xka 35 sot416 323 346.pdf

Transistors Digital transistors (built-in resistors) DTA124XE / DTA124XUA / DTA124XKA / DTA124XSA FFeatures FExternal dimensions (Units mm) 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin- film resistors with complete isola- tion to allow positive bi

 0.7. Size:2070K  rohm
 dta124xefra dta124xkafra.pdf

DTA124X series Datasheet PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) AEC-Q101 Qualified lOutline l Parameter Value VMT3 EMT3 VCC -50V IC(MAX.) -100mA R1 22k DTA124XMFHA DTA124XEFRA DTA124XM DTA124XE R2 (SC-105AA) SOT-416(SC-75A) 47k UMT3 SMT3 lFeatures l 1) Built-In Biasing Resistors 2) Built-in bia

 0.8. Size:93K  diodes
 ddta124xe.pdf

DDTA (R1 R2 SERIES) PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case SOT523 Complementary NPN Types Available (DDTC) Case Material Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Resistors, R1 R2 Moisture Sensitivity L

 0.9. Size:222K  onsemi
 dta114eet1g dta114tet1g dta114yet1g dta115eet1g dta123eet1g dta123jet1g dta124eet1g dta124xet1g.pdf

DTA114EET1 Series, SDTA114EET1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http //onsemi.com This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias PNP SIL

 0.10. Size:770K  lrc
 ldta114eet1g ldta114tet1g ldta124xet1g ldta143eet1g ldta144eet1g.pdf

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTC114EET1G Series S-LDTC114EET1G Series NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network cons

 0.11. Size:768K  lrc
 ldta114eet1g ldta124eet1g ldta144eet1g ldta114yet1g ldta114tet1g ldta143tet1g ldta123eet1g ldta143eet1g ldta143zet1g ldta124xet1g ldta123jet1g ldta115eet1g ldta144wet1g.pdf

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTA114EET1G Series PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors

 0.12. Size:122K  chenmko
 chdta124xegp.pdf

CHENMKO ENTERPRISE CO.,LTD CHDTA124XEGP SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation c