DTC023JM . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTC023JM
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 0.047
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 12 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: SC-105AA VMT3 SOT723
Búsqueda de reemplazo de transistor bipolar DTC023JM
DTC023JM Datasheet (PDF)
dtc023jeb.pdf
100mA/50V Digital transistors(with built-in resistors)DTC023JM / DTC023JEB / DTC023JUBFeatures Dimensions (Unit : mm)1) Built-in bias resistors enable the configuration of VMT3an inverter circuit without connecting external input resistors.(See equivalent circuit)2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the inp
dtc023yeb dtc023ym dtc023yub.pdf
DTC023Y seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutline VMT3 EMT3FParameter ValueOUT OUT VCC50VIN IN IC(MAX.)100mAGND GND R12.2kWDTC023YM DTC023YEB R2(SC-105AA) (SC-89) 10kW UMT3FOUT lFeaturesIN 1) Built-In Biasing Resistors.GND 2) Built-in bias resistors enable the configuration of an inverter
dtc023eeb dtc023eub dtc023em.pdf
DTC023E seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutline VMT3 EMT3FParameter ValueOUT OUT VCC50VIN IN IC(MAX.)100mAGND GND R12.2kWDTC023EM DTC023EEB R2(SC-105AA) (SC-89) 2.2kW UMT3FOUT lFeaturesIN 1) Built-In Biasing Resistors, R1 = R2 = 2.2kW.GND 2) Built-in bias resistors enable the configuratio
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