DTC114WE . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTC114WE
Código: 84
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 4.7 kOhm
Ratio típica de resistencia R1/R2 = 2.1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 30 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 250 MHz
Ganancia de corriente contínua (hfe): 24
Paquete / Cubierta: EMT3
Búsqueda de reemplazo de transistor bipolar DTC114WE
DTC114WE Datasheet (PDF)
dtc114w-ser dtc114we.pdf
100mA / 50V Digital transistors (with built-in resistors) DTC114WE / DTC114WUA / DTC114WKA Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3(SC-75A) 1.6 0.70.550.3 Features 1)Built-in bias resistors enable the configuration of an inverter ( )3circuit without connecting external input resistors. 2)The bias resistors consist o
ddtc114we.pdf
DDTC (R1 R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1R2 Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) B C A 0.15 0.30 0.22TOP VIEW "Green" Device (Note 3 and 4) B 0.75 0.85 0.80C 1.45 1.75 1.60
chdtc114wegp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTC114WEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cu
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
