DTC114WE Datasheet, Equivalent, Cross Reference Search
Type Designator: DTC114WE
SMD Transistor Code: 84
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 4.7 kOhm
Typical Resistor Ratio R1/R2 = 2.1
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 30
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Forward Current Transfer Ratio (hFE), MIN: 24
Noise Figure, dB: -
Package: EMT3
DTC114WE Transistor Equivalent Substitute - Cross-Reference Search
DTC114WE Datasheet (PDF)
dtc114w-ser dtc114we.pdf
100mA / 50V Digital transistors (with built-in resistors) DTC114WE / DTC114WUA / DTC114WKA Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3(SC-75A) 1.6 0.70.550.3 Features 1)Built-in bias resistors enable the configuration of an inverter ( )3circuit without connecting external input resistors. 2)The bias resistors consist o
ddtc114we.pdf
DDTC (R1 R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction ASOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1R2 Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) B C A 0.15 0.30 0.22TOP VIEW "Green" Device (Note 3 and 4) B 0.75 0.85 0.80C 1.45 1.75 1.60
chdtc114wegp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTC114WEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cu
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