2N5869 Todos los transistores

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5869 2N5870 DESCRIPTION With TO-3 package Low collector saturation voltage APPLICATIONS For medium-speed switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER

2N5864 Dimensions in mm (inches). Bipolar PNP Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 70V dia. IC = 1.5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1

2N5867 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in ac

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5867 2N5868 DESCRIPTION With TO-3 package Low collector saturation voltage APPLICATIONS For medium-speed switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETER