2SA2031 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SA2031

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 140 W

Tensión colector-base (Vcb): 250 V

Tensión colector-emisor (Vce): 230 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 15 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 10 MHz

Ganancia de corriente contínua (hFE): 60

Encapsulados: TO3PN

 Búsqueda de reemplazo de 2SA2031

- Selecciónⓘ de transistores por parámetros

 

2SA2031 datasheet

 ..1. Size:33K  sanyo
2sa2031 2sc5669.pdf pdf_icon

2SA2031

Ordering number ENN6586 2SA2031 / 2SC5669 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SA2031 / 2SC5669 230V / 15A, AF100W Output Applications Features Package Dimensions Large current capacitance. unit mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process. [2SA2031 / 2SC5669] 15.6 3.2 4.8 14.0

 ..2. Size:241K  jmnic
2sa2031.pdf pdf_icon

2SA2031

JMnic Product Specification Silicon PNP Power Transistors 2SA2031 DESCRIPTION With TO-3PN package Complement to type 2SC5669 Wide area of safe operation Large current capacitance APPLICATIONS For audio frequency output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta=

 ..3. Size:189K  inchange semiconductor
2sa2031.pdf pdf_icon

2SA2031

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA2031 DESCRIPTION Large current capacitance Wide ASO and high durability against breakdown Complement to Type 2SC5669 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS 230V/15A AF100W output application ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

 8.1. Size:185K  toshiba
2sa2034.pdf pdf_icon

2SA2031

2SA2034 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2034 High-Voltage Switching Applications Unit mm High voltage VCBO = -400 V High speed tf = 0.3 s (max) (IC = -1.0 A) Absolute Maximum Ratings (Tc = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO -400 V Collector-emitter voltage VCEO -400 V Emitter-base voltage VEBO -7 V DC IC -2

Otros transistores... 2SA1757, 2SA1758, 2SA1788, 2SA1789, 2SA1878, 2SA1879, 2SA1880, 2SA1988, MJE350, 2SB1069A, 2SB1071A, 2SB1086A, 2SB1393A, 2SB1508, 2SB1548, 2SB1548A, 2SB1565