Биполярный транзистор 2SA2031 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA2031
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 140 W
Макcимально допустимое напряжение коллектор-база (Ucb): 250 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 230 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 15 A
Граничная частота коэффициента передачи тока (ft): 10 MHz
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: TO3PN
2SA2031 Datasheet (PDF)
2sa2031 2sc5669.pdf
Ordering number : ENN65862SA2031 / 2SC5669PNP Epitaxial Planar Silicon TransistorNPN Triple Diffused Planar Silicon Transistor2SA2031 / 2SC5669230V / 15A, AF100W Output ApplicationsFeatures Package Dimensions Large current capacitance. unit : mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process.[2SA2031 / 2SC5669]15.63.24.814.0
2sa2031.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA2031 DESCRIPTION With TO-3PN package Complement to type 2SC5669 Wide area of safe operation Large current capacitance APPLICATIONS For audio frequency output applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=
2sa2031.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2031DESCRIPTIONLarge current capacitanceWide ASO and high durability against breakdownComplement to Type 2SC5669Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS230V/15A AF100W output applicationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
2sa2034.pdf
2SA2034 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2034 High-Voltage Switching Applications Unit: mm High voltage : VCBO = -400 V High speed : tf = 0.3 s (max) (IC = -1.0 A) Absolute Maximum Ratings (Tc = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO -400 VCollector-emitter voltage VCEO -400 VEmitter-base voltage VEBO -7 VDC IC -2
2sa2037 2sc5694.pdf
Ordering number : ENN65872SA2037 / 2SC5694PNP / NPN Epitaxial Planar Silicon Transistors2SA2037 / 2SC5694DC / DC Converter ApplicationsApplicationsPackage Dimensions Relay drivers, lamp drivers, motor drivers andunit : mmprinter drivers.2042B8.0[2SA2037 / 2SC5694]4.03.31.0 1.0Features Adoption of MBIT process. Large current capacity.3.0 Low co
2sa2039-tl-e.pdf
2SA2039/2SC5706Ordering number : EN6912CSANYO SemiconductorsDATA SHEETPNP/NPN Epitaxial Planar Silicon Transistor2SA2039/2SC5706 High-Current SwitchingApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage
2sa2039 2sc5706.pdf
Ordering number : ENN6912B2SA2039 / 2SC5706PNP / NPN Epitaxial Planar Silicon Transistors2SA2039 / 2SC5706High Current Switching ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash.Features Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switchin
2sa2039 2sc5706.pdf
Ordering number : ENN69122SA2039 / 2SC5706PNP / NPN Epitaxial Planar Silicon Transistors2SA2039 / 2SC5706High Current Switching ApplicationsFeatures Package Dimensions DC-DC converter, relay drivers, lamp drivers, unit : mmmotor drivers, strobes. 2045BFeatures[2SA2039 / 2SC5706] Adoption of FBET, MBIT process.6.52.35.0 Large current capacitance.0.54
2sa2030 2sa2018 2sa2119k.pdf
2SA2030 / 2SA2018 / 2SA2119KDatasheetLow frequency transistor(-12V, -500mA)lOutlinelParameter Value SOT-723 SOT-416VCEO-12VIC-500mA 2SA2030 2SA2018(VMT3) (EMT3)lFeatures l SOT-346 1)High current.2)Collector-Emitter saturation voltage is low. VCE(sat)250mA at IC=-200mA/IB=-10
2sa2018 2sa2018 2sa2030 2sa2119k.pdf
2SA2018 / 2SA2030 / 2SA2119K Transistors Low frequency transistor 2SA2018 / 2SA2030 / 2SA2119K The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Dimensions (Unit : mm) Applications For switching, for muting. 2SA2018 Features 1) A collector current is large. 2) Collector saturation voltage is low. Each
2sa2039-e 2sc5706-h 2sc5706 2sc5706.pdf
Ordering number : EN6912D2SA2039/2SC5706Bipolar Transistorhttp://onsemi.com(-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al
2sa2039 2sc5706.pdf
Ordering number : EN6912D2SA2039/2SC5706Bipolar Transistorhttp://onsemi.com(-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al
s-l2sa2030m3t5g.pdf
LESHAN RADIO COMP ANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Applications For switching, for muting. PNP Features L2SA2030M3T5G1) A collector current is large. 2) Collector saturation voltage is low. S-L2SA2030M3T5GVCE (sat) 250mA At IC = -200mA / IB = -10mA
l2sa2030m3t5g.pdf
LESHAN RADIO COMP ANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Applications For switching, for muting. PNP Features L2SA2030M3T5G1) A collector current is large. 2) Collector saturation voltage is low. S-L2SA2030M3T5GVCE (sat) 250mA At IC = -200mA / IB = -10mA
2sa2039.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2039DESCRIPTIONLarge current capacitanceHigh-speed switching100% avalanche testedHigh allowable power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SC5706Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAP
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050