Справочник транзисторов. 2SA2031

 

Биполярный транзистор 2SA2031 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SA2031
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 140 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 250 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 230 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 15 A
   Граничная частота коэффициента передачи тока (ft): 10 MHz
   Статический коэффициент передачи тока (hfe): 60
   Корпус транзистора: TO3PN

 Аналоги (замена) для 2SA2031

 

 

2SA2031 Datasheet (PDF)

 ..1. Size:33K  sanyo
2sa2031 2sc5669.pdf

2SA2031
2SA2031

Ordering number : ENN65862SA2031 / 2SC5669PNP Epitaxial Planar Silicon TransistorNPN Triple Diffused Planar Silicon Transistor2SA2031 / 2SC5669230V / 15A, AF100W Output ApplicationsFeatures Package Dimensions Large current capacitance. unit : mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process.[2SA2031 / 2SC5669]15.63.24.814.0

 ..2. Size:241K  jmnic
2sa2031.pdf

2SA2031
2SA2031

JMnic Product Specification Silicon PNP Power Transistors 2SA2031 DESCRIPTION With TO-3PN package Complement to type 2SC5669 Wide area of safe operation Large current capacitance APPLICATIONS For audio frequency output applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=

 ..3. Size:189K  inchange semiconductor
2sa2031.pdf

2SA2031
2SA2031

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2031DESCRIPTIONLarge current capacitanceWide ASO and high durability against breakdownComplement to Type 2SC5669Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS230V/15A AF100W output applicationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 8.1. Size:185K  toshiba
2sa2034.pdf

2SA2031
2SA2031

2SA2034 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2034 High-Voltage Switching Applications Unit: mm High voltage : VCBO = -400 V High speed : tf = 0.3 s (max) (IC = -1.0 A) Absolute Maximum Ratings (Tc = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO -400 VCollector-emitter voltage VCEO -400 VEmitter-base voltage VEBO -7 VDC IC -2

 8.2. Size:37K  sanyo
2sa2037 2sc5694.pdf

2SA2031
2SA2031

Ordering number : ENN65872SA2037 / 2SC5694PNP / NPN Epitaxial Planar Silicon Transistors2SA2037 / 2SC5694DC / DC Converter ApplicationsApplicationsPackage Dimensions Relay drivers, lamp drivers, motor drivers andunit : mmprinter drivers.2042B8.0[2SA2037 / 2SC5694]4.03.31.0 1.0Features Adoption of MBIT process. Large current capacity.3.0 Low co

 8.3. Size:367K  sanyo
2sa2039-tl-e.pdf

2SA2031
2SA2031

2SA2039/2SC5706Ordering number : EN6912CSANYO SemiconductorsDATA SHEETPNP/NPN Epitaxial Planar Silicon Transistor2SA2039/2SC5706 High-Current SwitchingApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage

 8.4. Size:61K  sanyo
2sa2039 2sc5706.pdf

2SA2031
2SA2031

Ordering number : ENN6912B2SA2039 / 2SC5706PNP / NPN Epitaxial Planar Silicon Transistors2SA2039 / 2SC5706High Current Switching ApplicationsApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flash.Features Adoption of FBET and MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switchin

 8.5. Size:40K  sanyo
2sa2039 2sc5706.pdf

2SA2031
2SA2031

Ordering number : ENN69122SA2039 / 2SC5706PNP / NPN Epitaxial Planar Silicon Transistors2SA2039 / 2SC5706High Current Switching ApplicationsFeatures Package Dimensions DC-DC converter, relay drivers, lamp drivers, unit : mmmotor drivers, strobes. 2045BFeatures[2SA2039 / 2SC5706] Adoption of FBET, MBIT process.6.52.35.0 Large current capacitance.0.54

 8.6. Size:1677K  rohm
2sa2030 2sa2018 2sa2119k.pdf

2SA2031
2SA2031

2SA2030 / 2SA2018 / 2SA2119KDatasheetLow frequency transistor(-12V, -500mA)lOutlinelParameter Value SOT-723 SOT-416VCEO-12VIC-500mA 2SA2030 2SA2018(VMT3) (EMT3)lFeatures l SOT-346 1)High current.2)Collector-Emitter saturation voltage is low. VCE(sat)250mA at IC=-200mA/IB=-10

 8.7. Size:139K  rohm
2sa2018 2sa2018 2sa2030 2sa2119k.pdf

2SA2031
2SA2031

2SA2018 / 2SA2030 / 2SA2119K Transistors Low frequency transistor 2SA2018 / 2SA2030 / 2SA2119K The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Dimensions (Unit : mm) Applications For switching, for muting. 2SA2018 Features 1) A collector current is large. 2) Collector saturation voltage is low. Each

 8.8. Size:326K  onsemi
2sa2039-e 2sc5706-h 2sc5706 2sc5706.pdf

2SA2031
2SA2031

Ordering number : EN6912D2SA2039/2SC5706Bipolar Transistorhttp://onsemi.com(-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al

 8.9. Size:418K  onsemi
2sa2039 2sc5706.pdf

2SA2031
2SA2031

Ordering number : EN6912D2SA2039/2SC5706Bipolar Transistorhttp://onsemi.com(-)50V, (-)5A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications DC / DC converter, relay drivers, lamp drivers, motor drivers, flashFeatures Adoption of FBET and MBIT processes Large current capacitance Low collector-to-emitter saturation voltage High-speed switching High al

 8.10. Size:125K  lrc
s-l2sa2030m3t5g.pdf

2SA2031
2SA2031

LESHAN RADIO COMP ANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Applications For switching, for muting. PNP Features L2SA2030M3T5G1) A collector current is large. 2) Collector saturation voltage is low. S-L2SA2030M3T5GVCE (sat) 250mA At IC = -200mA / IB = -10mA

 8.11. Size:125K  lrc
l2sa2030m3t5g.pdf

2SA2031
2SA2031

LESHAN RADIO COMP ANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Applications For switching, for muting. PNP Features L2SA2030M3T5G1) A collector current is large. 2) Collector saturation voltage is low. S-L2SA2030M3T5GVCE (sat) 250mA At IC = -200mA / IB = -10mA

 8.12. Size:268K  inchange semiconductor
2sa2039.pdf

2SA2031
2SA2031

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2039DESCRIPTIONLarge current capacitanceHigh-speed switching100% avalanche testedHigh allowable power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SC5706Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAP

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