2SB1086A
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SB1086A
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10
W
Tensión colector-base (Vcb): 160
V
Tensión colector-emisor (Vce): 160
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 1.5
A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50
MHz
Ganancia de corriente contínua (hfe): 56
Paquete / Cubierta:
TO126
Búsqueda de reemplazo de transistor bipolar 2SB1086A
2SB1086A
Datasheet (PDF)
..1. Size:146K jmnic
2sb1086a.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SB1086A DESCRIPTION With TO-126 package Complement to type 2SD1563A Low collector saturation voltage Large current capability APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute ma
..2. Size:115K inchange semiconductor
2sb1086a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1086A DESCRIPTION With TO-126 package Complement to type 2SD1563A Low collector saturation voltage Large current capability APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3
7.1. Size:146K jmnic
2sb1086.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1086 DESCRIPTION With TO-126 package Complement to type 2SD1563 Low collector saturation voltage Large current capability APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maxi
7.2. Size:215K inchange semiconductor
2sb1086.pdf
isc Silicon PNP Power Transistor 2SB1086DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SD1563Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
8.2. Size:157K jmnic
2sb1085a.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1085A DESCRIPTION With TO-220 package Complement to type 2SD1562A Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and symbo
8.3. Size:157K jmnic
2sb1085.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SB1085 DESCRIPTION With TO-220 package Complement to type 2SD1562 Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol
8.4. Size:146K jmnic
2sb1087.pdf
JMnic Product SpecificationSilicon PNP Power Transistors 2SB1087 DESCRIPTION With TO-220C package High DC current gain DARLINGTON APPLICATIONS For low frequency power amplifier and low speed power switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER COND
8.5. Size:123K inchange semiconductor
2sb1085a.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1085A DESCRIPTION With TO-220 package Complement to type 2SD1562A Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (
8.6. Size:216K inchange semiconductor
2sb1085.pdf
isc Silicon PNP Power Transistor 2SB1085DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -120V (Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SD1562Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
8.7. Size:218K inchange semiconductor
2sb1087.pdf
isc Silicon PNP Darlington Power Transistor 2SB1087DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = -2V, I = -2A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers and low speedswitching applications.ABSOLU
8.8. Size:218K inchange semiconductor
2sb1089.pdf
isc Silicon PNP Power Transistor 2SB1089DESCRIPTIONHigh Collector Current:: I = -3ACLow Collector Saturation Voltage: V = -1.5V(Max)@I = -2ACE(sat) CComplement to Type 2SD1567Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power supplies or a variety of drives in audioand other equipment.ABSOLUTE MAXIM
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