2SB1086A Specs and Replacement
Type Designator: 2SB1086A
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10
W
Maximum Collector-Base Voltage |Vcb|: 160
V
Maximum Collector-Emitter Voltage |Vce|: 160
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 1.5
A
Electrical Characteristics
Transition Frequency (ft): 50
MHz
Forward Current Transfer Ratio (hFE), MIN: 56
Noise Figure, dB: -
Package:
TO126
-
BJT ⓘ Cross-Reference Search
2SB1086A datasheet
..1. Size:146K jmnic
2sb1086a.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SB1086A DESCRIPTION With TO-126 package Complement to type 2SD1563A Low collector saturation voltage Large current capability APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute ma... See More ⇒
..2. Size:115K inchange semiconductor
2sb1086a.pdf 

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1086A DESCRIPTION With TO-126 package Complement to type 2SD1563A Low collector saturation voltage Large current capability APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 ... See More ⇒
7.1. Size:146K jmnic
2sb1086.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SB1086 DESCRIPTION With TO-126 package Complement to type 2SD1563 Low collector saturation voltage Large current capability APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maxi... See More ⇒
7.2. Size:215K inchange semiconductor
2sb1086.pdf 

isc Silicon PNP Power Transistor 2SB1086 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SD1563 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒
8.2. Size:157K jmnic
2sb1085a.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SB1085A DESCRIPTION With TO-220 package Complement to type 2SD1562A Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and symbo... See More ⇒
8.3. Size:157K jmnic
2sb1085.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SB1085 DESCRIPTION With TO-220 package Complement to type 2SD1562 Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol ... See More ⇒
8.4. Size:146K jmnic
2sb1087.pdf 

JMnic Product Specification Silicon PNP Power Transistors 2SB1087 DESCRIPTION With TO-220C package High DC current gain DARLINGTON APPLICATIONS For low frequency power amplifier and low speed power switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER COND... See More ⇒
8.5. Size:123K inchange semiconductor
2sb1085a.pdf 

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1085A DESCRIPTION With TO-220 package Complement to type 2SD1562A Low collector saturation voltage APPLICATIONS Designed for use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (... See More ⇒
8.6. Size:216K inchange semiconductor
2sb1085.pdf 

isc Silicon PNP Power Transistor 2SB1085 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SD1562 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME... See More ⇒
8.7. Size:218K inchange semiconductor
2sb1087.pdf 

isc Silicon PNP Darlington Power Transistor 2SB1087 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@ (V = -2V, I = -2A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers and low speed switching applications. ABSOLU... See More ⇒
8.8. Size:218K inchange semiconductor
2sb1089.pdf 

isc Silicon PNP Power Transistor 2SB1089 DESCRIPTION High Collector Current I = -3A C Low Collector Saturation Voltage V = -1.5V(Max)@I = -2A CE(sat) C Complement to Type 2SD1567 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power supplies or a variety of drives in audio and other equipment. ABSOLUTE MAXIM... See More ⇒
Detailed specifications: 2SA1789
, 2SA1878
, 2SA1879
, 2SA1880
, 2SA1988
, 2SA2031
, 2SB1069A
, 2SB1071A
, TIP120
, 2SB1393A
, 2SB1508
, 2SB1548
, 2SB1548A
, 2SB1565
, 2SB1566
, 2SB1568
, 2SB1603
.
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