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2SC3298B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC3298B
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 200 V
   Tensión colector-emisor (Vce): 200 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1.5 A

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: TO220FA

 Búsqueda de reemplazo de transistor bipolar 2SC3298B

 

2SC3298B Datasheet (PDF)

 ..1. Size:397K  motorola
2sa1306b 2sc3298b.pdf

2SC3298B
2SC3298B

 ..2. Size:109K  toshiba
2sc3298b.pdf

2SC3298B
2SC3298B

 ..3. Size:159K  jmnic
2sc3298 2sc3298a 2sc3298b.pdf

2SC3298B
2SC3298B

Product Specification www.jmnic.com Silicon Power Transistors 2SC3298 2SC3298A 2SC3298B DESCRIPTION With TO-220Fa package Complement to type 2SA1306,2SA1306A,2SA1306B APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITIO

 ..4. Size:214K  inchange semiconductor
2sc3298b.pdf

2SC3298B
2SC3298B

isc Silicon NPN Power Transistors 2SC3298BDESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = 200V(Min)(BR)CEOComplement to Type 2SA1306BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYM

 ..5. Size:198K  inchange semiconductor
2sc3298 2sc3298a 2sc3298b.pdf

2SC3298B
2SC3298B

isc Silicon NPN Power Transistor 2SC3298 A BDESCRIPTIONWith TO-220F packagingComplement to Type 2SA1306 A BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlElectronic ignitionAlternator regulatorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT2SC3298 160V Collector-Base Voltage 2

 7.1. Size:215K  inchange semiconductor
2sc3298-a-b.pdf

2SC3298B
2SC3298B

isc Silicon NPN Power Transistors 2SC3298/A/BDESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = 160V(Min)-2SC3298(BR)CEO= 180V(Min)-2SC3298A= 200V(Min)-2SC3298BComplement to Type 2SA1306/A/BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplif

 7.2. Size:189K  inchange semiconductor
2sc3298 2sc3298a.pdf

2SC3298B
2SC3298B

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC3298/ADESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = 160V(Min)-2SC3298(BR)CEO= 180V(Min)-2SC3298AComplement to Type 2SA1306/AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifie

 8.1. Size:122K  toshiba
2sc3299.pdf

2SC3298B
2SC3298B

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.2. Size:250K  toshiba
2sc3295.pdf

2SC3298B
2SC3298B

2SC3295 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3295 Audio Frequency Amplifier Applications Unit: mm Switching Applications High hFE: h = 600~3600 FE High voltage: V = 50 V CEO High collector current: I = 150 mA (max) C Small package Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage V

 8.3. Size:33K  sanyo
2sc3292.pdf

2SC3298B
2SC3298B

Ordering number:EN1332ANPN Planar Type Silicon Darlington Transistor2SC3292For General-Purpose DriversApplications Package Dimensions Especially suited for use in switching of L loadunit:mmmotor driver, printer hammer driver, relay driver, etc.2010C[2SC3292]Features High DC current gain. Large current capacity and wide ASO. Contains 6010V Zener diode betw

 8.4. Size:39K  sanyo
2sc3293.pdf

2SC3298B
2SC3298B

Ordering number:EN1333CNPN Planar Silicon Darlington Transistor2SC3293Driver ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2010C[2SC3293]Features High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 6010V between collectorand b

 8.5. Size:31K  sanyo
2sc3294.pdf

2SC3298B
2SC3298B

Ordering number:EN1422CNPN Planar Silicon Transistor2SC3294Driver ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2010C[2SC3294]Features High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 6010V between collectorand base. U

 8.6. Size:195K  jmnic
2sc3296.pdf

2SC3298B
2SC3298B

JMnic Product Specification Silicon NPN Power Transistors 2SC3296 DESCRIPTION With TO-220Fa package Wide area of safe operation Complement to type 2SA1304 APPLICATIONS Power amplifier applications Vertical output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCB

 8.7. Size:136K  jmnic
2sc3297.pdf

2SC3298B
2SC3298B

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3297 DESCRIPTION With TO-220Fa package Low saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage

 8.8. Size:2229K  kexin
2sc3295.pdf

2SC3298B
2SC3298B

SMD Type TransistorsNPN Transistors2SC3295SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=150mA Collector Emitter Voltage VCEO=50V1 2+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Colle

 8.9. Size:219K  inchange semiconductor
2sc3299.pdf

2SC3298B
2SC3298B

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC3299DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 50V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1307Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

 8.10. Size:197K  inchange semiconductor
2sc3296.pdf

2SC3298B
2SC3298B

isc Silicon NPN Power Transistor 2SC3296TDESCRIPTIONTCollector-Emitter Breakdown Voltage-: VB B= 150V(Min)(BR)CEOComplement to Type 2SA1304Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationTAPPLICATIONSTPower amplifier applications.Vertical output applications.ABSOLUTE MAXIMUM RATINGS(TB B=25)aSYMBOL PARAMETER VALUE UNITVB

 8.11. Size:201K  inchange semiconductor
2sc3297.pdf

2SC3298B
2SC3298B

isc Silicon NPN Power Transistor 2SC3297DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 30V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1305Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Car radio, car stereo output stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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