2SC3298B - описание и поиск аналогов

 ..1. Size:397K  motorola
 2sa1306b 2sc3298b.pdf 

 ..2. Size:109K  toshiba
 2sc3298b.pdf 

 ..3. Size:159K  jmnic
 2sc3298 2sc3298a 2sc3298b.pdf 

Product Specification www.jmnic.com Silicon Power Transistors 2SC3298 2SC3298A 2SC3298B DESCRIPTION With TO-220Fa package Complement to type 2SA1306,2SA1306A,2SA1306B APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITIO

 ..4. Size:214K  inchange semiconductor
 2sc3298b.pdf 

isc Silicon NPN Power Transistors 2SC3298B DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Complement to Type 2SA1306B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYM

 ..5. Size:198K  inchange semiconductor
 2sc3298 2sc3298a 2sc3298b.pdf 

isc Silicon NPN Power Transistor 2SC3298 A B DESCRIPTION With TO-220F packaging Complement to Type 2SA1306 A B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AC-DC motor control Electronic ignition Alternator regulator ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT 2SC3298 160 V Collector-Base Voltage 2

 7.1. Size:215K  inchange semiconductor
 2sc3298-a-b.pdf 

isc Silicon NPN Power Transistors 2SC3298/A/B DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = 160V(Min)-2SC3298 (BR)CEO = 180V(Min)-2SC3298A = 200V(Min)-2SC3298B Complement to Type 2SA1306/A/B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplif

 7.2. Size:189K  inchange semiconductor
 2sc3298 2sc3298a.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC3298/A DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = 160V(Min)-2SC3298 (BR)CEO = 180V(Min)-2SC3298A Complement to Type 2SA1306/A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Driver stage amplifie

 8.1. Size:122K  toshiba
 2sc3299.pdf 

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.2. Size:250K  toshiba
 2sc3295.pdf 

2SC3295 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3295 Audio Frequency Amplifier Applications Unit mm Switching Applications High hFE h = 600 3600 FE High voltage V = 50 V CEO High collector current I = 150 mA (max) C Small package Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage V

 8.3. Size:33K  sanyo
 2sc3292.pdf 

Ordering number EN1332A NPN Planar Type Silicon Darlington Transistor 2SC3292 For General-Purpose Drivers Applications Package Dimensions Especially suited for use in switching of L load unit mm motor driver, printer hammer driver, relay driver, etc. 2010C [2SC3292] Features High DC current gain. Large current capacity and wide ASO. Contains 60 10V Zener diode betw

 8.4. Size:39K  sanyo
 2sc3293.pdf 

Ordering number EN1333C NPN Planar Silicon Darlington Transistor 2SC3293 Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit mm drivers, printer hammer drivers, relay drivers). 2010C [2SC3293] Features High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 60 10V between collector and b

 8.5. Size:31K  sanyo
 2sc3294.pdf 

Ordering number EN1422C NPN Planar Silicon Transistor 2SC3294 Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit mm drivers, printer hammer drivers, relay drivers). 2010C [2SC3294] Features High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 60 10V between collector and base. U

 8.6. Size:195K  jmnic
 2sc3296.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC3296 DESCRIPTION With TO-220Fa package Wide area of safe operation Complement to type 2SA1304 APPLICATIONS Power amplifier applications Vertical output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCB

 8.7. Size:136K  jmnic
 2sc3297.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3297 DESCRIPTION With TO-220Fa package Low saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage

 8.8. Size:2229K  kexin
 2sc3295.pdf 

SMD Type Transistors NPN Transistors 2SC3295 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=150mA Collector Emitter Voltage VCEO=50V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Colle

 8.9. Size:219K  inchange semiconductor
 2sc3299.pdf 

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3299 DESCRIPTION Collector-Emitter Breakdown Voltage V = 50V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1307 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

 8.10. Size:197K  inchange semiconductor
 2sc3296.pdf 

isc Silicon NPN Power Transistor 2SC3296 TDESCRIPTIONT Collector-Emitter Breakdown Voltage- VB B= 150V(Min) (BR)CEO Complement to Type 2SA1304 Minimum Lot-to-Lot variations for robust device performance and reliable operation TAPPLICATIONST Power amplifier applications. Vertical output applications. ABSOLUTE MAXIMUM RATINGS(TB B=25 ) a SYMBOL PARAMETER VALUE UNIT VB

 8.11. Size:201K  inchange semiconductor
 2sc3297.pdf 

isc Silicon NPN Power Transistor 2SC3297 DESCRIPTION Collector-Emitter Breakdown Voltage V = 30V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1305 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications. Car radio, car stereo output stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(