2SD2340
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD2340
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50
W
Tensión colector-base (Vcb): 130
V
Tensión colector-emisor (Vce): 110
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 6
A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 20
MHz
Ganancia de corriente contínua (hfe): 5000
Paquete / Cubierta:
TO3PN
Búsqueda de reemplazo de transistor bipolar 2SD2340
2SD2340
Datasheet (PDF)
..1. Size:192K inchange semiconductor
2sd2340.pdf 
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD2340DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 110V(Min)(BR)CEOHigh DC Current Gain: h = 5000(Min) @I = 3AFE CLow Collector Saturation Voltgae-: V = 2.5V(Max.)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudior
8.1. Size:38K panasonic
2sd2345.pdf
Transistor2SD2345Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh foward current transfer ratio hFE.1Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.3Low noise voltage NV.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit0.2 0.1Collector to b
8.2. Size:42K panasonic
2sd2345 e.pdf
Transistor2SD2345Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh foward current transfer ratio hFE.1Low collector to emitter saturation voltage VCE(sat).High emitter to base voltage VEBO.3Low noise voltage NV.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit0.2 0.1Collector to b
8.5. Size:207K inchange semiconductor
2sd2348.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2348DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow Saturation VoltageHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applicaitionsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
8.6. Size:213K inchange semiconductor
2sd234.pdf
isc Silicon NPN Power Transistor 2SD234DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.2V(Max) @I = 3.0ACE(sat) CComplement to Type 2SB434Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier applications.ABSOLUTE MAXI
8.7. Size:207K inchange semiconductor
2sd2349.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2349DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOLow Saturation VoltageHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applicaitionsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
