2SD2340 Datasheet PDF and Equivalents Search

 ..1. Size:192K  inchange semiconductor

 2sd2340.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2340 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 110V(Min) (BR)CEO High DC Current Gain h = 5000(Min) @I = 3A FE C Low Collector Saturation Voltgae- V = 2.5V(Max.)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio r... See More ⇒

 8.1. Size:38K  panasonic

 2sd2345.pdf

Transistor 2SD2345 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. 3 Low noise voltage NV. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit 0.2 0.1 Collector to b... See More ⇒

 8.2. Size:42K  panasonic

 2sd2345 e.pdf

Transistor 2SD2345 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. 3 Low noise voltage NV. 2 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit 0.2 0.1 Collector to b... See More ⇒

 8.3. Size:143K  no

 2sd2348.pdf

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 8.4. Size:47K  no

 2sd2349.pdf

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 8.5. Size:207K  inchange semiconductor

 2sd2348.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2348 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Low Saturation Voltage High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒

 8.6. Size:213K  inchange semiconductor

 2sd234.pdf

isc Silicon NPN Power Transistor 2SD234 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.2V(Max) @I = 3.0A CE(sat) C Complement to Type 2SB434 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications. ABSOLUTE MAXI... See More ⇒

 8.7. Size:207K  inchange semiconductor

 2sd2349.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2349 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO Low Saturation Voltage High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒