2SD2578 Datasheet. Equivalente

 ..1. Size:45K  sanyo
 2sd2578.pdf

Ordering number 5794 NPN Triple Diffused Planar Silicon Transistor 2SD2578 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SD2578] Adoption of MBIT process. 16.0 5.6 3.4 On-chip damper diode. 3.1 2.8 2.0 2.0 1.0 0.6

 ..2. Size:215K  inchange semiconductor
 2sd2578.pdf

isc Silicon NPN Power Transistor 2SD2578 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 8.1. Size:101K  toshiba
 2sd2571.pdf

2SD2571 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD2571 High Power Switching Applications Unit mm Hammer Drive, Pulse Motor Drive Applications High DC current gain hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage V = 1.5 V (max) (I = 1 A) CE (sat) C Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating

 8.2. Size:43K  sanyo
 2sd2579.pdf

Ordering number 5795 NPN Triple Diffused Planar Silicon Transistor 2SD2579 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SD2579] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 2 3 1 Base 2 Collector

 8.3. Size:38K  panasonic
 2sd2575 e.pdf

Transistor 2SD2575 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 15 V 0.45 0.1 0.45 0.1 Collector to emitter voltage VCEO 10 V 1.27 1.27 Emitter to bas

 8.4. Size:34K  panasonic
 2sd2575.pdf

Transistor 2SD2575 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 15 V 0.45 0.1 0.45 0.1 Collector to emitter voltage VCEO 10 V 1.27 1.27 Emitter to bas

 8.5. Size:85K  panasonic
 2sd2573.pdf

Power Transistors 2SD2573 Silicon NPN triple diffusion planar type For high current amplification, power amplification Unit mm 7.5 0.2 4.5 0.2 Features Low collector-emitter saturation voltage VCE(sat) Allowing supply with the radial taping 0.65 0.1 0.85 0.1 0.8 C 0.8 C 1.0 0.1 Absolute Maximum Ratings Ta = 25 C 0.7 0.1 0.7 0.1 Parameter Symbol Rating Uni

 8.6. Size:216K  inchange semiconductor
 2sd2579.pdf

isc Silicon NPN Power Transistor 2SD2579 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage