2SD2599 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SD2599 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2599 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit: mm High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 8 V (Max.) CE (sat) High Speed : t = 0.5 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL

isc Silicon NPN Power Transistor 2SD2599DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

Transistor2SD2598Unit: mmSilicon NPN epitaxial planer type2.5 0.11.05darlington6.9 0.1 0.05 (1.45)0.7 4.0 0.8For low-frequency amplification0.65 max.Features Forward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer bammer: hFE+0.1 0.450.05= 4000 to 20000.2.5 0.5 2.5 0.5 A shunt resist

Transistor2SD2598Unit: mmSilicon NPN epitaxial planer type2.5 0.11.05darlington6.9 0.1 0.05 (1.45)0.7 4.0 0.8For low-frequency amplification0.65 max.Features Forward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer bammer: hFE+0.1 0.450.05= 4000 to 20000.2.5 0.5 2.5 0.5 A shunt resist

isc Silicon NPN Power Transistor 2SD2593DESCRIPTIONLow Collector Saturation Voltage-: V = 1.2 (Max)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emitter Voltage 60