2SD2599 - описание и поиск аналогов

2SD2599 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2599 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit mm High Voltage VCBO = 1500 V Low Saturation Voltage V = 8 V (Max.) CE (sat) High Speed t = 0.5 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL

isc Silicon NPN Power Transistor 2SD2599 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

Transistor 2SD2598 Unit mm Silicon NPN epitaxial planer type 2.5 0.1 1.05 darlington 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 For low-frequency amplification 0.65 max. Features Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer hFE +0.1 0.45 0.05 = 4000 to 20000. 2.5 0.5 2.5 0.5 A shunt resist

Transistor 2SD2598 Unit mm Silicon NPN epitaxial planer type 2.5 0.1 1.05 darlington 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 For low-frequency amplification 0.65 max. Features Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer hFE +0.1 0.45 0.05 = 4000 to 20000. 2.5 0.5 2.5 0.5 A shunt resist

isc Silicon NPN Power Transistor 2SD2593 DESCRIPTION Low Collector Saturation Voltage- V = 1.2 (Max)@ I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 60