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BU1508AF . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BU1508AF
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 35 W
   Tensión colector-base (Vcb): 1500 V
   Tensión colector-emisor (Vce): 700 V
   Tensión emisor-base (Veb): 7.5 V
   Corriente del colector DC máxima (Ic): 8 A

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 4
   Paquete / Cubierta: TO220FA
 

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BU1508AF Datasheet (PDF)

 ..1. Size:213K  inchange semiconductor
bu1508af.pdf pdf_icon

BU1508AF

isc Silicon NPN Power Transistor BU1508AFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 7.1. Size:59K  philips
bu1508ax.pdf pdf_icon

BU1508AF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1508AX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-packenvelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptionaltolerance to base drive and collector current load variati

 7.2. Size:209K  inchange semiconductor
bu1508ax.pdf pdf_icon

BU1508AF

isc Silicon NPN Power Transistor BU1508AXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNIT

 8.1. Size:51K  philips
bu1508dx.pdf pdf_icon

BU1508AF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1508DX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrateddamper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour televisionreceivers. Features exceptional tolerance to base drive an

Otros transistores... 3DD201 , 3DD207 , 3DD301B , 3DD301C , 3DD301D , 3DD303A , 3DD303B , 3DD303C , TIP42C , BU2506AF , BU2506AX , BU2515DX , BU2520DW , BU2525AW , BU2527DX , BU2708DF , BU2720AX .

History: 2SA136 | 2N3050 | 2N5926 | 2N3049

 

 
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