BU1508AF Todos los transistores

 

BU1508AF Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BU1508AF
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 35 W
   Tensión colector-base (Vcb): 1500 V
   Tensión colector-emisor (Vce): 700 V
   Tensión emisor-base (Veb): 7.5 V
   Corriente del colector DC máxima (Ic): 8 A

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 4
   Paquete / Cubierta: TO220FA
 

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BU1508AF datasheet

 ..1. Size:213K  inchange semiconductor
bu1508af.pdf pdf_icon

BU1508AF

isc Silicon NPN Power Transistor BU1508AF DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min.) CEO(SUS) High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

 7.1. Size:59K  philips
bu1508ax.pdf pdf_icon

BU1508AF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1508AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variati

 7.2. Size:209K  inchange semiconductor
bu1508ax.pdf pdf_icon

BU1508AF

isc Silicon NPN Power Transistor BU1508AX DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min.) CEO(SUS) High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT

 8.1. Size:51K  philips
bu1508dx.pdf pdf_icon

BU1508AF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1508DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive an

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