BU1508AF datasheet, аналоги, основные параметры

Наименование производителя: BU1508AF  📄📄 

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 35 W

Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 700 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 7.5 V

Макcимальный постоянный ток коллектора (Ic): 8 A

Электрические характеристики

Статический коэффициент передачи тока (hFE): 4

Корпус транзистора: TO220FA

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BU1508AF даташит

 ..1. Size:213K  inchange semiconductor
 bu1508af.pdf pdf_icon

BU1508AF

isc Silicon NPN Power Transistor BU1508AF DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min.) CEO(SUS) High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

 7.1. Size:59K  philips
 bu1508ax.pdf pdf_icon

BU1508AF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1508AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variati

 7.2. Size:209K  inchange semiconductor
 bu1508ax.pdf pdf_icon

BU1508AF

isc Silicon NPN Power Transistor BU1508AX DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min.) CEO(SUS) High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT

 8.1. Size:51K  philips
 bu1508dx.pdf pdf_icon

BU1508AF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1508DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive an

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Другие транзисторы: 3DD201, 3DD207, 3DD301B, 3DD301C, 3DD301D, 3DD303A, 3DD303B, 3DD303C, 13007, BU2506AF, BU2506AX, BU2515DX, BU2520DW, BU2525AW, BU2527DX, BU2708DF, BU2720AX