Биполярный транзистор BU1508AF
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: BU1508AF
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 35
W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 700
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7.5
V
Макcимальный постоянный ток коллектора (Ic): 8
A
Статический коэффициент передачи тока (hfe): 4
Корпус транзистора: TO220FA
Аналоги (замена) для BU1508AF
BU1508AF
Datasheet (PDF)
..1. Size:213K inchange semiconductor
bu1508af.pdf isc Silicon NPN Power Transistor BU1508AFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
7.1. Size:59K philips
bu1508ax.pdf Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1508AX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-packenvelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptionaltolerance to base drive and collector current load variati
7.2. Size:209K inchange semiconductor
bu1508ax.pdf isc Silicon NPN Power Transistor BU1508AXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNIT
8.1. Size:51K philips
bu1508dx.pdf Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1508DX GENERAL DESCRIPTIONEnhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrateddamper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour televisionreceivers. Features exceptional tolerance to base drive an
8.2. Size:209K inchange semiconductor
bu1508dx.pdf isc Silicon NPN Power Transistor BU1508DXDESCRIPTIONHigh VoltageHigh Speed SwitchingBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage V =
8.3. Size:215K inchange semiconductor
bu1508df.pdf isc Silicon NPN Power Transistor BU1508DFDESCRIPTIONHigh VoltageHigh Speed SwitchingBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage V =
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