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BU2527DX . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BU2527DX
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 45 W
   Tensión colector-base (Vcb): 1500 V
   Tensión colector-emisor (Vce): 800 V
   Tensión emisor-base (Veb): 7.5 V
   Corriente del colector DC máxima (Ic): 12 A

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 5
   Paquete / Cubierta: TO3PML
     - Selección de transistores por parámetros

 

BU2527DX Datasheet (PDF)

 ..1. Size:63K  philips
bu2527dx 1.pdf pdf_icon

BU2527DX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527DX GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plasticfull-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improvedRBSOA performance.QUICK REFERENCE DATASYMBOL PARAMETE

 ..2. Size:72K  jmnic
bu2527dx.pdf pdf_icon

BU2527DX

Product Specification www.jmnic.com Silicon NPN Power Transistors BU2527DX DESCRIPTION With TO-3PML package High voltage High speed switching Built-in damper diode APPLICATIONS For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol Absolute

 ..3. Size:216K  inchange semiconductor
bu2527dx.pdf pdf_icon

BU2527DX

INCHANGE Semiconductorisc Silicon NPN Power Transistor BU2527DXDESCRIPTIONHigh Switching SpeedHigh VoltageBuilt-in Ddamper DdiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of highresolution monitors.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UN

 7.1. Size:62K  philips
bu2527df 1.pdf pdf_icon

BU2527DX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527DF GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plasticfull-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improvedRBSOA performance.QUICK REFERENCE DATASYMBOL PARAMETE

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SC1092 | KRC109M | MUN5211DW1T1G | 2SA1417 | 2SA1656 | 2SD5041 | 2SC3153L

 

 
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