BU2527DX Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BU2527DX

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 45 W

Tensión colector-base (Vcb): 1500 V

Tensión colector-emisor (Vce): 800 V

Tensión emisor-base (Veb): 7.5 V

Corriente del colector DC máxima (Ic): 12 A

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 5

Encapsulados: TO3PML

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BU2527DX datasheet

 ..1. Size:63K  philips
 bu2527dx 1.pdf pdf_icon

BU2527DX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance. QUICK REFERENCE DATA SYMBOL PARAMETE

 ..2. Size:72K  jmnic
 bu2527dx.pdf pdf_icon

BU2527DX

Product Specification www.jmnic.com Silicon NPN Power Transistors BU2527DX DESCRIPTION With TO-3PML package High voltage High speed switching Built-in damper diode APPLICATIONS For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute

 ..3. Size:216K  inchange semiconductor
 bu2527dx.pdf pdf_icon

BU2527DX

INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2527DX DESCRIPTION High Switching Speed High Voltage Built-in Ddamper Ddiode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of high resolution monitors. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UN

 7.1. Size:62K  philips
 bu2527df 1.pdf pdf_icon

BU2527DX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance. QUICK REFERENCE DATA SYMBOL PARAMETE

MOSTRAR MÁS

Otros transistores... 3DD303B, 3DD303C, BU1508AF, BU2506AF, BU2506AX, BU2515DX, BU2520DW, BU2525AW, 2SD718, BU2708DF, BU2720AX, BU2720DF, BU2722AF, BU2725AX, BU2725DX, BU2727AF, BU2727AW