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BU2527DX . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BU2527DX
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 45 W
   Tensión colector-base (Vcb): 1500 V
   Tensión colector-emisor (Vce): 800 V
   Tensión emisor-base (Veb): 7.5 V
   Corriente del colector DC máxima (Ic): 12 A

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 5
   Paquete / Cubierta: TO3PML
 

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BU2527DX Datasheet (PDF)

 ..1. Size:63K  philips
bu2527dx 1.pdf pdf_icon

BU2527DX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527DX GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plasticfull-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improvedRBSOA performance.QUICK REFERENCE DATASYMBOL PARAMETE

 ..2. Size:72K  jmnic
bu2527dx.pdf pdf_icon

BU2527DX

Product Specification www.jmnic.com Silicon NPN Power Transistors BU2527DX DESCRIPTION With TO-3PML package High voltage High speed switching Built-in damper diode APPLICATIONS For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol Absolute

 ..3. Size:216K  inchange semiconductor
bu2527dx.pdf pdf_icon

BU2527DX

INCHANGE Semiconductorisc Silicon NPN Power Transistor BU2527DXDESCRIPTIONHigh Switching SpeedHigh VoltageBuilt-in Ddamper DdiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of highresolution monitors.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UN

 7.1. Size:62K  philips
bu2527df 1.pdf pdf_icon

BU2527DX

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527DF GENERAL DESCRIPTIONNew generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plasticfull-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improvedRBSOA performance.QUICK REFERENCE DATASYMBOL PARAMETE

Otros transistores... 3DD303B , 3DD303C , BU1508AF , BU2506AF , BU2506AX , BU2515DX , BU2520DW , BU2525AW , 2SC2073 , BU2708DF , BU2720AX , BU2720DF , BU2722AF , BU2725AX , BU2725DX , BU2727AF , BU2727AW .

History: CSB1116A | JE9143A | RCA1000 | KSC3488O | 2N6357 | AD701D | 2N60B

 

 
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