BU2708DF
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BU2708DF
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 45
W
Tensión colector-base (Vcb): 1700
V
Tensión colector-emisor (Vce): 825
V
Corriente del colector DC máxima (Ic): 8
A
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 3
Paquete / Cubierta: TO3PFA
Búsqueda de reemplazo de transistor bipolar BU2708DF
BU2708DF
Datasheet (PDF)
..1. Size:58K philips
bu2708df 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708DF GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope.Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance tobase drive and collector current load variations resu
..2. Size:123K inchange semiconductor
bu2708df.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2708DF DESCRIPTION With TO-3PFa package High voltage High speed switching Built-in damper diode APPLICATIONS For use in horizontal deflection circuits of colour TV receivers. PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER
7.1. Size:59K philips
bu2708dx 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708DX GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope.Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance tobase drive and collector current load variations resu
7.2. Size:126K inchange semiconductor
bu2708dx.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2708DX DESCRIPTION High Switching Speed High Voltage Built-in Ddamper Ddiode APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector- Emitter Voltage(VBE= 0) 1700 V VCEO Co
8.1. Size:60K philips
bu2708ax 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AX GENERAL DESCRIPTIONHigh voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontaldeflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector currentload variations, resulting in a low worst-case di
8.2. Size:60K philips
bu2708ax.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AX GENERAL DESCRIPTIONHigh voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontaldeflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector currentload variations, resulting in a low worst-case di
8.3. Size:191K philips
bu2708af.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.4. Size:59K philips
bu2708af 1.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AF GENERAL DESCRIPTIONHigh voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontaldeflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector currentload variations, resulting in a low worst-case di
8.5. Size:216K inchange semiconductor
bu2708ax.pdf
isc Silicon NPN Power Transistor BU2708AXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 825V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of colorTV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
8.6. Size:211K inchange semiconductor
bu2708af.pdf
isc Silicon NPN Power Transistor BU2708AFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 825V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of colorTV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
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