All Transistors. BU2708DF Datasheet

 

BU2708DF Datasheet, Equivalent, Cross Reference Search


   Type Designator: BU2708DF
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 45 W
   Maximum Collector-Base Voltage |Vcb|: 1700 V
   Maximum Collector-Emitter Voltage |Vce|: 825 V
   Maximum Collector Current |Ic max|: 8 A
   Forward Current Transfer Ratio (hFE), MIN: 3
   Noise Figure, dB: -
   Package: TO3PFA

 BU2708DF Transistor Equivalent Substitute - Cross-Reference Search

   

BU2708DF Datasheet (PDF)

 ..1. Size:58K  philips
bu2708df 1.pdf

BU2708DF
BU2708DF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708DF GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope.Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance tobase drive and collector current load variations resu

 ..2. Size:123K  inchange semiconductor
bu2708df.pdf

BU2708DF
BU2708DF

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2708DF DESCRIPTION With TO-3PFa package High voltage High speed switching Built-in damper diode APPLICATIONS For use in horizontal deflection circuits of colour TV receivers. PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER

 7.1. Size:59K  philips
bu2708dx 1.pdf

BU2708DF
BU2708DF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708DX GENERAL DESCRIPTIONHigh voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope.Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance tobase drive and collector current load variations resu

 7.2. Size:126K  inchange semiconductor
bu2708dx.pdf

BU2708DF
BU2708DF

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2708DX DESCRIPTION High Switching Speed High Voltage Built-in Ddamper Ddiode APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector- Emitter Voltage(VBE= 0) 1700 V VCEO Co

 8.1. Size:60K  philips
bu2708ax 1.pdf

BU2708DF
BU2708DF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AX GENERAL DESCRIPTIONHigh voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontaldeflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector currentload variations, resulting in a low worst-case di

 8.2. Size:60K  philips
bu2708ax.pdf

BU2708DF
BU2708DF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AX GENERAL DESCRIPTIONHigh voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontaldeflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector currentload variations, resulting in a low worst-case di

 8.3. Size:191K  philips
bu2708af.pdf

BU2708DF
BU2708DF

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.4. Size:59K  philips
bu2708af 1.pdf

BU2708DF
BU2708DF

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AF GENERAL DESCRIPTIONHigh voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontaldeflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector currentload variations, resulting in a low worst-case di

 8.5. Size:216K  inchange semiconductor
bu2708ax.pdf

BU2708DF
BU2708DF

isc Silicon NPN Power Transistor BU2708AXDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 825V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of colorTV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

 8.6. Size:211K  inchange semiconductor
bu2708af.pdf

BU2708DF
BU2708DF

isc Silicon NPN Power Transistor BU2708AFDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 825V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of colorTV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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