BU2708DF Specs and Replacement
Type Designator: BU2708DF
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 45 W
Maximum Collector-Base Voltage |Vcb|: 1700 V
Maximum Collector-Emitter Voltage |Vce|: 825 V
Maximum Collector Current |Ic max|: 8 A
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 3
Noise Figure, dB: -
Package: TO3PFA
- BJT ⓘ Cross-Reference Search
BU2708DF datasheet
..1. Size:58K philips
bu2708df 1.pdf 

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708DF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resu... See More ⇒
..2. Size:123K inchange semiconductor
bu2708df.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU2708DF DESCRIPTION With TO-3PFa package High voltage High speed switching Built-in damper diode APPLICATIONS For use in horizontal deflection circuits of colour TV receivers. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER ... See More ⇒
7.1. Size:59K philips
bu2708dx 1.pdf 

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708DX GENERAL DESCRIPTION High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resu... See More ⇒
7.2. Size:126K inchange semiconductor
bu2708dx.pdf 

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2708DX DESCRIPTION High Switching Speed High Voltage Built-in Ddamper Ddiode APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1700 V VCEO Co... See More ⇒
8.1. Size:60K philips
bu2708ax 1.pdf 

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AX GENERAL DESCRIPTION High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations, resulting in a low worst-case di... See More ⇒
8.2. Size:60K philips
bu2708ax.pdf 

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AX GENERAL DESCRIPTION High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations, resulting in a low worst-case di... See More ⇒
8.3. Size:191K philips
bu2708af.pdf 

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
8.4. Size:59K philips
bu2708af 1.pdf 

Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2708AF GENERAL DESCRIPTION High voltage, high speed switching npn transistor in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations, resulting in a low worst-case di... See More ⇒
8.5. Size:216K inchange semiconductor
bu2708ax.pdf 

isc Silicon NPN Power Transistor BU2708AX DESCRIPTION Collector-Emitter Sustaining Voltage- V = 825V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V... See More ⇒
8.6. Size:211K inchange semiconductor
bu2708af.pdf 

isc Silicon NPN Power Transistor BU2708AF DESCRIPTION Collector-Emitter Sustaining Voltage- V = 825V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V... See More ⇒
Detailed specifications: 3DD303C, BU1508AF, BU2506AF, BU2506AX, BU2515DX, BU2520DW, BU2525AW, BU2527DX, 13003, BU2720AX, BU2720DF, BU2722AF, BU2725AX, BU2725DX, BU2727AF, BU2727AW, BU2727DF
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