BU508AX Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BU508AX 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 45 W
Tensión colector-base (Vcb): 1500 V
Tensión colector-emisor (Vce): 700 V
Corriente del colector DC máxima (Ic): 8 A
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 7 MHz
Ganancia de corriente contínua (hFE): 6
Encapsulados: TO3PML
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BU508AX datasheet
..1. Size:50K philips
bu508ax.pdf 
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AX GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT399 envelope, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VB
..2. Size:216K inchange semiconductor
bu508ax.pdf
isc Silicon NPN Power Transistor BU508AX DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
8.1. Size:48K philips
bu508af 2.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VB
8.2. Size:61K philips
bu508aw.pdf
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AW GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a plastic envelope, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1500
8.3. Size:245K st
bu208a bu508a bu508afi.pdf
BU208A BU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY (> 1500 V) FULLY INSULATED PACKAGE (U.L. TO-3 COMPLIANT) FOR EASY MOUNTING 1 APPLICATIONS 2 HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa 3 3 technolo
8.4. Size:91K st
bu508a.pdf
BU208A/508A/508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N) TO-3 JEDEC TO-3 METAL CASE. 1 APPLICATIONS 2 HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa 3 3 technology for c
8.5. Size:236K st
bu208a bu508a.pdf
BU208A BU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY (> 1500 V) FULLY INSULATED PACKAGE (U.L. TO-3 COMPLIANT) FOR EASY MOUNTING 1 APPLICATIONS 2 HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa 3 3 technolo
8.6. Size:211K st
bu508af.pdf
BU508AF High voltage NPN power transistor for standard definition CRT display Features State-of-the-art technology Diffused collector Enhanced generation Stable performances versus operating temperature variation Low base-drive requirement 3 2 Tight hFE range at operating collector current 1 High ruggedness ISOWATT218FX Fully insulated power pa
8.7. Size:75K st
bu208a bu508a .pdf
BU208A BU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS STM PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N) TO-3 JEDEC TO-3 METAL CASE. 1 APPLICATIONS 2 HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BU208A, BU508A and BU508AFI are manufactured using Multiepitaxial Mesa 3 3 technology f
8.8. Size:211K st
bu508aw.pdf
BU508AW High voltage NPN power transistor for standard definition CRT display Features State-of-the-art technology Diffused collector Enhanced generation Stable performances versus operating temperature variation Low base-drive requirement 3 Tight hFE range at operating collector current 2 1 High ruggedness TO-247 semi-insulated power package T
8.9. Size:47K fairchild semi
bu508af.pdf
BU508AF TV Horizontal Output Applications TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 1
8.10. Size:78K utc
bu508afi.pdf
UTC BU508 AFI NPN EPITAXIAL SILICON TRANSISTOR SILICON DIFFUSED POWER TO-3PML TRANSISTOR 1. BASE 2. COLLECTOR 3. EMITTER DESCRIPTION The UTC BU508AFI is high voltage, high speed switching NPN transistors in a plastic envelope, primarily for use in horizontal deflection circuites of colour television receivers. 1 2 3 Features * TV color horizontal deflection. * With TO-3P
8.11. Size:264K cdil
bu508a.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR BU508A TO- 3PN Non Isolated Plastic Package Color TV Horizontal Output Application (No Damper Diode) ABSOLUTE MAXIMUM RATINGS (Ta=25 C Unless Specified Otherwise ) DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 1500 V Collector -Emitter V
8.12. Size:118K cdil
bu508at.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR POWER TRANSISTOR BU508AT TO-220 Plastic Package High Voltage, High-Speed Switching Transistor Intended for use in Horizontal Deflection Circuits of Colour Televisions ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage VCES 1500 V VCEO Collector
8.13. Size:1298K cn sps
bu508at4tl.pdf
BU508AT4TL Silicon NPN Power Transistor DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Power Dissipation- P = 125W@T = 25 D C APPLICATIONS Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector- Emitter Voltage(V = 0) 1500 V CES BE V Collector-Emitter Vo
8.14. Size:426K cn sptech
bu508a.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor BU508A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Power Dissipation- P = 125W@T = 25 D C APPLICATIONS Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector- Emitter Voltage(V = 0) 1500 V
8.16. Size:211K inchange semiconductor
bu508at.pdf
isc Silicon NPN Power Transistor BU508AT DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Power Dissipation- P = 100W@T = 25 D C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER
8.17. Size:87K inchange semiconductor
bu508a-m.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU508A-M DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 800V (Min) High Power Dissipation- PD= 100W@TC= 25 APPLICATIONS Designed for horizontal output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector- Emitter Voltage(V = 0)
8.18. Size:134K inchange semiconductor
bu508af.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU508AF DESCRIPTION With TO-3PFa package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of high resolution monitors PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT
8.19. Size:214K inchange semiconductor
bu508afi.pdf
isc Silicon NPN Power Transistor BU508AFI DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
8.20. Size:214K inchange semiconductor
bu508aw.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor BU508AW DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL
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