T06 Todos los transistores

 ..1. Size:135K  inchange semiconductor
 t06.pdf

NPN T06 TO-220C 1 2 3 (TC=25 ) VCBO 400 V

 0.1. Size:44K  fairchild semi
 kst05 kst06.pdf

KST05/06 Driver Transistor Collector-Emitter Voltage VCEO = KST05 60V 3 KST06 80V Collector Power Dissipation PC (max) = 350mW Complement to KST55/56 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collecto-Base Voltage KST05 60 V KST06

 0.2. Size:238K  vishay
 vs-100mt060wsp.pdf

VS-100MT060WSP www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Rectifier and PFC FEATURES Input rectifier bridge PFC stage with warp 2 IGBT and FRED Pt hyperfast diode Very low stray inductance design for high speed operation Integrated thermistor Isolated baseplate MTP UL approved file E78996 (Package example) Designed and qu

 0.3. Size:257K  vishay
 vs-25mt060wfapbf.pdf

VS-25MT060WFAPbF www.vishay.com Vishay Semiconductors Full Bridge IGBT MTP (Warp Speed IGBT), 50 A FEATURES Gen 4 warp speed IGBT technology HEXFRED antiparallel diodes with ultrasoft reverse recovery Very low conduction and switching losses Optional SMT thermistor Al2O3 DBC Very low stray inductance design for high speed operation Speed 8 kHz t

 0.4. Size:186K  vishay
 vs-100mt060wdf.pdf

VS-100MT060WDF www.vishay.com Vishay Semiconductors Primary MTP IGBT Power Module FEATURES Buck PFC stage with warp 2 IGBT and FRED Pt hyperfast diode Integrated thermistor Isolated baseplate Very low stray inductance design for high speed operation Designed and qualified for industrial level Material categorization for definitions of compliance MTP ple

 0.5. Size:151K  vishay
 70mt060w.pdf

70MT060WHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP (Warp 2 Speed IGBT), 70 A FEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient HEXFRED antiparallel diodes with ultrasoft reverse recovery SMD thermistor (NTC) Al2O3 BDC Very low stay inductance design for high speed operation MTP UL pending Speed 60 kHz to 150 k

 0.6. Size:2777K  vishay
 70mt060wsp.pdf

70MT060WSP www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Rectifier and PFC FEATURES Input rectifier bridge PFC stage with warp 2 IGBT and FRED Pt hyperfast diode Very low stray inductance design for high speed operation Higher switching frequency up to 150 kHz Integrated thermistor MTP Isolated baseplate PRODUCT SUMMARY UL appr

 0.7. Size:198K  vishay
 vs-70mt060wsp.pdf

VS-70MT060WSP www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Rectifier and PFC FEATURES Input rectifier bridge PFC stage with warp 2 IGBT and FRED Pt hyperfast diode Very low stray inductance design for high speed operation Integrated thermistor Isolated baseplate MTP UL approved file E78996 Designed and qualified for industria

 0.8. Size:168K  vishay
 100mt060wdf.pdf

VS-100MT060WDF www.vishay.com Vishay Semiconductors Primary MTP IGBT Power Module FEATURES Buck PFC stage with warp 2 IGBT and FRED Pt hyperfast diode Integrated thermistor Isolated baseplate Compliant to RoHS Directive 2011/65/EU Very low stray inductance design for high speed operation MTP Designed and qualified for industrial level BENEFITS PRODUCT SU

 0.9. Size:184K  vishay
 vs-150mt060wdf.pdf

VS-150MT060WDF www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Dual Forward FEATURES Buck PFC stage with warp 3 IGBT and FRED Pt hyperfast diode Integrated thermistor Isolated baseplate Very low stray inductance design for high speed operation Ultrafast switching IGBT Designed and qualified for industrial level MTP Material categor

 0.10. Size:246K  vishay
 50mt060ulstapbf.pdf

 0.11. Size:225K  vishay
 50mt060u.pdf

50MT060ULSTAPbF www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT MTP (Ultrafast Speed IGBT), 100 A FEATURES Generation 4 ultrafast speed IGBT technology HEXFRED diode with ultrasoft reverse recovery Very low conduction and switching losses Optional SMD thermistor (NTC) Al2O3 DBC Very low stray inductance design for high speed operation UL ap

 0.12. Size:325K  vishay
 25mt060wfapbf.pdf

25MT060WFAPbF Vishay High Power Products "Full Bridge" IGBT MTP (Warp Speed IGBT), 50 A FEATURES Generation 4 warp speed IGBT technology HEXFRED antiparallel diodes with ultrasoft reverse recovery Very low conduction and switching losses Optional SMT thermistor Al2O3 DBC Very low stray inductance design for high speed operation Speed 8 kHz to 60 kHz > 2

 0.13. Size:132K  vishay
 50mt060whtapbf.pdf

50MT060WHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP (Warp Speed IGBT), 114 A FEATURES Generation 4 warp speed IGBT technology HEXFRED antiparallel diodes with ultrasoft reverse recovery Very low conduction and switching losses Optional SMD thermistor (NTC) Very low junction to case thermal resistance UL approved file E78996 MTP Speed 60 kHz

 0.14. Size:178K  vishay
 vs-70mt060whtapbf.pdf

VS-70MT060WHTAPbF www.vishay.com Vishay Semiconductors Half Bridge IGBT MTP (Warp 2 Speed IGBT), 70 A FEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient HEXFRED antiparallel diodes with ultrasoft reverse recovery SMD thermistor (NTC) Al2O3 BDC Very low stay inductance design for high speed operation UL approved file E789

 0.15. Size:147K  vishay
 70mt060whtapbf.pdf

70MT060WHTAPbF www.vishay.com Vishay Semiconductors Half Bridge IGBT MTP (Warp 2 Speed IGBT), 70 A FEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient HEXFRED antiparallel diodes with ultrasoft reverse recovery SMD thermistor (NTC) Al2O3 BDC Very low stay inductance design for high speed operation MTP UL pending Speed

 0.16. Size:134K  vishay
 vs-50mt060whtapbf.pdf

VS-50MT060WHTAPbF www.vishay.com Vishay Semiconductors Half Bridge IGBT MTP (Warp Speed IGBT), 114 A FEATURES Gen 4 warp speed IGBT technology HEXFRED antiparallel diodes with ultrasoft reverse recovery Very low conduction and switching losses Optional SMD thermistor (NTC) Very low junction to case thermal resistance UL approved file E78996 MTP

 0.17. Size:420K  ixys
 t0600tb45a.pdf

Date - 16 Feb, 2011 Data Sheet Issue - P1 WESTCODE An IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0600TB45A Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS

 0.18. Size:981K  mcc
 mct06p10.pdf

 0.19. Size:367K  auk
 sut061g.pdf

SUT061G Dual NPN Bipolar transistor Descriptions General purpose amplifier Recommended for LED Drive Application Features Thermally Enhanced Power PKG Low saturation VCE(sat)= 0.4V Max 2 NPN chips in TESOP-8 Package TESOP-8 Ordering Information Type NO. Marking Package Code SUT061 TESOP-8 SUT061 Year & Week Code Absolute maximum ratings

 0.20. Size:151K  ape
 ap95t06gp.pdf

AP95T06GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 8.5m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description AP95T06 series are from Advanced Power inno

 0.21. Size:93K  ape
 ap98t06gp.pdf

AP98T06GP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower Gate Charge RDS(ON) 5m Fast Switching Characteristic ID 80A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistanc

 0.22. Size:93K  ape
 ap60t06gj-hf.pdf

AP60T06GJ-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 55V Lower On-resistance RDS(ON) 12m Fast Switching Characteristic ID 46A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D TO-251(J) designer with the best combination of fast swi

 0.23. Size:93K  ape
 ap90t06gp-hf.pdf

AP90T06GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 68V Lower On-resistance RDS(ON) 9.5m Fast Switching Characteristic ID 76A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugged

 0.24. Size:56K  ape
 ap99lt06gp-hf.pdf

AP99LT06GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 145A G RoHS Compliant & Halogen-Free S Description AP99LT06 series are from Advanced Power innovated design and silicon process technology to achieve the lo

 0.25. Size:165K  ape
 ap98t06gs.pdf

AP98T06GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower Gate Charge RDS(ON) 5m Fast Switching Characteristic ID 80A G RoHS Compliant & Halogen-Free S Description AP98T06 series are from Advanced Power innovated design and silicon process technology to achieve the lowest p

 0.26. Size:59K  ape
 ap55t06gi-hf.pdf

AP55T06GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 18m RoHS Compliant & Halogen-Free ID 29A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- G resist

 0.27. Size:54K  ape
 ap98t06gp-hf.pdf

AP98T06GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower Gate Charge RDS(ON) 5m Fast Switching Characteristic ID 80A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized

 0.28. Size:114K  ape
 ap95t06bgp.pdf

AP95T06BGP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 9m Fast Switching Characteristic ID 75A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, G low on-resista

 0.29. Size:95K  ape
 ap99t06gp-hf.pdf

AP99T06GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 4.2m Fast Switching Characteristic ID 120A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugged

 0.30. Size:94K  ape
 ap98t06gi-hf.pdf

AP98T06GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Low On-resistance RDS(ON) 5m Fast Switching Characteristic ID 67A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D rugge

 0.31. Size:56K  ape
 ap99lt06gi-hf.pdf

AP99LT06GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 120A G RoHS Compliant & Halogen-Free S Description AP99LT06 series are from Advanced Power innovated design and silicon process technology to achieve the lo

 0.32. Size:92K  ape
 ap98t06gs-hf.pdf

AP98T06GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower Gate Charge RDS(ON) 5m Fast Switching Characteristic ID 80A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S

 0.33. Size:94K  ape
 ap99t06agp-hf.pdf

AP99T06AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Low On-resistance RDS(ON) 4.2m Fast Switching Characteristic ID 135A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz

 0.34. Size:118K  ape
 ap55t06gs-hf.pdf

AP55T06GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 18m RoHS Compliant & Halogen-Free ID 32.4A G S Description AP55T06 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- G resistance and

 0.35. Size:93K  ape
 ap60t06gp-hf.pdf

AP60T06GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 55V Lower On-resistance RDS(ON) 12m Fast Switching Characteristic ID 46A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz

 0.36. Size:63K  ape
 ap95t06gs p-hf.pdf

AP95T06GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 8.5m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge

 0.37. Size:164K  ape
 ap55t06gi.pdf

AP55T06GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 18m RoHS Compliant & Halogen-Free ID 29A G S Description AP55T06 series are from Advanced Power innovated design and silicon process technology to achiev

 0.38. Size:163K  ape
 ap95t06gs.pdf

AP95T06GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 8.5m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description AP95T06 series are from Advanced Power inno

 0.39. Size:59K  ape
 ap99t06agi-hf.pdf

AP99T06AGI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Low On-resistance RDS(ON) 4.2m Fast Switching Characteristic ID 76A G RoHS Compliant & Halogen-Free S Description AP99T06A series are from Advanced Power innovated design and silicon process technology to achieve the lowes

 0.40. Size:149K  ape
 ap95t06agp.pdf

AP95T06AGP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 8.5m Fast Switching Characteristic ID 75A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-resis

 0.41. Size:56K  ape
 ap99lt06gs-hf.pdf

AP99LT06GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 145A G RoHS Compliant & Halogen-Free S Description AP99LT06 series are from Advanced Power innovated design and silicon process technology to achieve the lo

 0.42. Size:834K  jilin sino
 mt06n020a.pdf

N N-CHANNEL MOSFET MT06N020A MAIN CHARACTERISTICS Package ID 50A VDSS 60V Rdson-max - 18m (@Vgs=10V Qg-typ 34nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Uninterruptible

 0.43. Size:1344K  jilin sino
 tt060u060eq.pdf

N N-CHANNEL IGBT R TT060U060EQ MAIN CHARACTERISTICS Package IC 60 A VCES 600V Vcesat-typ 1.9V Vge=15V APPLICATIONS Welding converters Power Factor Correction PFC Air Condition FEATURES Low gate charge Trench FS

 0.44. Size:1004K  jilin sino
 mt06n008a.pdf

N N-CHANNEL MOSFET MT06N008A MAIN CHARACTERISTICS Package ID 90A VDSS 60V Rdson-max - 8.3m (@Vgs=10V Qg-typ 62.6nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Automotive a

 0.45. Size:1819K  jilin sino
 att060u060eq.pdf

N N-CHANNEL IGBT R ATT060U060EQ MAIN CHARACTERISTICS Package IC 60 A VCE 650V Vcesat-typ 1.9V Vge=15V APPLICATIONS Welding converters Power Factor Correction PFC OBC FEATURES Low gate charge Trench FS Tech

 0.46. Size:1078K  jilin sino
 tt060u065fq.pdf

 0.47. Size:887K  jilin sino
 mt06n020al.pdf

N N-CHANNEL MOSFET MT06N020AL MAIN CHARACTERISTICS Package ID 50A VDSS 60V Rdson-max - 17m (@Vgs=10V Qg-typ 47.4nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Uninterrupti

 0.48. Size:1140K  jilin sino
 mt06n005a.pdf

N N-CHANNEL MOSFET MT06N005A MAIN CHARACTERISTICS Package ID 160A VDSS 60V Rdson-max - 4.2m (@Vgs=10V Qg-typ 108nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Uninterrupti

 0.49. Size:1176K  jilin sino
 tt060u065fb.pdf

 0.50. Size:578K  goford
 gt060n10t gt060n10m.pdf

GOFORD GT060N10 N-Channel Enhancement Mode Power MOSFET Description The GT060N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features Schematic Diagram VDS 100V ID (at VGS = 10V) 120A RDS(ON) (at VGS = 10V)

 0.51. Size:132K  samhop
 stt06l01.pdf

Green Product STT06L01 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 220 @ VGS=10V Surface Mount Package. 100V 3A 260 @ VGS=4.5V D G G S STT SERIES S SOT - 223 ABSOLUTE MAXIMUM RATINGS (TA=25

 0.52. Size:598K  crhj
 crst065n08n crss063n08n.pdf

CRST065N08N, CRSS063N08N ( ) SkyMOS1 N-MOSFET 85V, 5.6m , 80A Features Product Summary VDS Uses CRM(CQ) advanced SkyMOS1 technology 85V Extremely low on-resistance RDS(on) RDS(on) 5.6m Excellent QgxRDS(on) product(FOM) ID 80A Qualified according to JEDEC criteria Applications Motor control and drive 100% Avalanche Tested 100

 0.53. Size:599K  crhj
 skst065n08n skss063n08n.pdf

SKST065N08N, SKSS063N08N ( ) SkyMOS1 N-MOSFET 85V, 5.6m , 105A Features Product Summary Uses CRM(CQ) advanced SkyMOS1 technology Wafer Code WCB Extremely low on-resistance RDS(on) VDS 85V Excellent QgxRDS(on) product(FOM) RDS(on) 5.6m ID Qualified according to JEDEC criteria 105A Applications Motor control and drive 100% Avala

 0.54. Size:564K  crhj
 crst060n10n crss057n10n.pdf

CRST060N10N, CRSS057N10N ( ) SkyMOS1 N-MOSFET 100V, 5.3m , 120A Features Product Summary VDS Uses CRM(CQ) advanced SkyMOS1 technology 100V Extremely low on-resistance RDS(on) RDS(on) 5.3m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteria Applications Motor control and drive 100% Avalanche Tested

 0.55. Size:1464K  kexin
 ndt06n03.pdf

SMD Type MOSFET N-Channel MOSFET NDT06N03 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 5.30+0.2 -0.2 +0.8 0.50 -0.7 Features 4 VDS (V) = 30V ID = 60 A (VGS = 10V) RDS(ON) 4.1m (VGS = 10V) 0.127 0.80+0.1 max -0.1 RDS(ON) 5.9m (VGS = 4.5V) 1 Gate + 0.1 D 2 Drain 2.3 0.60- 0.1 +0.15 3 Source 4.60 -0.15 4 Drain G S Absolute Ma

 0.56. Size:414K  silan
 svt068r5nt svt068r5ndtr svt068r5nstr svt068r5nl5tr.pdf

 0.57. Size:91K  chenmko
 cht06upngp.pdf

CHENMKO ENTERPRISE CO.,LTD CHT06UPNGP SURFACE MOUNT NPN/PNP Silicon AF Transistor Array VOLTAGE 80 Volts CURRENT 0.5 Ampere APPLICATION * AF input stages and driver applicationon equipment. * Other switching applications. FEATURE SC-74/SOT-457 * Small surface mounting type. (SC-74/SOT-457) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturat

 0.58. Size:1564K  sanrise-tech
 srt06n022h.pdf

Datasheet 2.2m , 60V, N-Channel Power MOSFET SRT06N022H General Description Symbol The Sanrise SRT06N022H is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior

 0.59. Size:1131K  sanrise-tech
 srt06n027h.pdf

Datasheet 2.7m , 60V, N-Channel Power MOSFET SRT06N027H General Description Symbol The Sanrise SRT06N027H is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable Source 1,2,3 for applications which req

 0.60. Size:1356K  sanrise-tech
 srt06n095l.pdf

Datasheet 9.5m , 60V, N-Channel Power MOSFET SRT06N095L General Description Symbol Drain 5,6,7,8 The Sanrise SRT06N095L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable Source 1,2,3 for applications which r

 0.61. Size:287K  silicon standard
 ssm95t06gp ssm95t06gs.pdf

SSM95T06GP,S N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge BV 60V DSS D Simple drive requirement R 8.5m DS(ON) Fast switching ID 75A G S Description G The SSM95T06S is in a TO-263 package, which is widely used for D S commercial and industrial surface mount applications, and is well suited TO-263 (S) for low voltage applications such as DC/DC converters. The throug

 0.62. Size:2043K  cn agmsemi
 agm15t06c-b.pdf

AGM15T06C-B Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 140 147 -- V GS D DSS Zero Gate Voltage Drain Current V =140V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Volt

 0.63. Size:1457K  cn agmsemi
 agm15t06h.pdf

AGM15T06H Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 150 -- -- V GS D Zero Gate Voltage Drain Current V =150V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltage V

 0.64. Size:1401K  cn agmsemi
 agm15t06ll.pdf

AGM15T06LL Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 150 -- -- V GS D Zero Gate Voltage Drain Current V =150V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltage

 0.65. Size:1427K  cn agmsemi
 agm15t06t.pdf

AGM15T06T Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 150 -- -- V GS D Zero Gate Voltage Drain Current V =150V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltage V

 0.66. Size:1496K  cn agmsemi
 agm15t06c.pdf

AGM15T06C General Description Product Summary The AGM15T06C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery BVDSS RDSON ID for load protection applications. 150V 6.5m 140A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to mi

 0.67. Size:221K  inchange semiconductor
 wt062.pdf

isc Silicon PNP Darlington Power Transistor WT062 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -5A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATI