T06 Specs and Replacement
Type Designator: T06
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 10 A
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 80
Package: TO220
T06 Substitution
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T06 datasheet
NPN T06 TO-220C 1 2 3 (TC=25 ) VCBO 400 V ... See More ⇒
KST05/06 Driver Transistor Collector-Emitter Voltage VCEO = KST05 60V 3 KST06 80V Collector Power Dissipation PC (max) = 350mW Complement to KST55/56 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collecto-Base Voltage KST05 60 V KST06 ... See More ⇒
VS-100MT060WSP www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Rectifier and PFC FEATURES Input rectifier bridge PFC stage with warp 2 IGBT and FRED Pt hyperfast diode Very low stray inductance design for high speed operation Integrated thermistor Isolated baseplate MTP UL approved file E78996 (Package example) Designed and qu... See More ⇒
VS-25MT060WFAPbF www.vishay.com Vishay Semiconductors Full Bridge IGBT MTP (Warp Speed IGBT), 50 A FEATURES Gen 4 warp speed IGBT technology HEXFRED antiparallel diodes with ultrasoft reverse recovery Very low conduction and switching losses Optional SMT thermistor Al2O3 DBC Very low stray inductance design for high speed operation Speed 8 kHz t... See More ⇒
VS-100MT060WDF www.vishay.com Vishay Semiconductors Primary MTP IGBT Power Module FEATURES Buck PFC stage with warp 2 IGBT and FRED Pt hyperfast diode Integrated thermistor Isolated baseplate Very low stray inductance design for high speed operation Designed and qualified for industrial level Material categorization for definitions of compliance MTP ple... See More ⇒
70MT060WHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP (Warp 2 Speed IGBT), 70 A FEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient HEXFRED antiparallel diodes with ultrasoft reverse recovery SMD thermistor (NTC) Al2O3 BDC Very low stay inductance design for high speed operation MTP UL pending Speed 60 kHz to 150 k... See More ⇒
70MT060WSP www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Rectifier and PFC FEATURES Input rectifier bridge PFC stage with warp 2 IGBT and FRED Pt hyperfast diode Very low stray inductance design for high speed operation Higher switching frequency up to 150 kHz Integrated thermistor MTP Isolated baseplate PRODUCT SUMMARY UL appr... See More ⇒
VS-70MT060WSP www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Rectifier and PFC FEATURES Input rectifier bridge PFC stage with warp 2 IGBT and FRED Pt hyperfast diode Very low stray inductance design for high speed operation Integrated thermistor Isolated baseplate MTP UL approved file E78996 Designed and qualified for industria... See More ⇒
VS-100MT060WDF www.vishay.com Vishay Semiconductors Primary MTP IGBT Power Module FEATURES Buck PFC stage with warp 2 IGBT and FRED Pt hyperfast diode Integrated thermistor Isolated baseplate Compliant to RoHS Directive 2011/65/EU Very low stray inductance design for high speed operation MTP Designed and qualified for industrial level BENEFITS PRODUCT SU... See More ⇒
VS-150MT060WDF www.vishay.com Vishay Semiconductors MTP IGBT Power Module Primary Dual Forward FEATURES Buck PFC stage with warp 3 IGBT and FRED Pt hyperfast diode Integrated thermistor Isolated baseplate Very low stray inductance design for high speed operation Ultrafast switching IGBT Designed and qualified for industrial level MTP Material categor... See More ⇒
50MT060ULSTAPbF www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT MTP (Ultrafast Speed IGBT), 100 A FEATURES Generation 4 ultrafast speed IGBT technology HEXFRED diode with ultrasoft reverse recovery Very low conduction and switching losses Optional SMD thermistor (NTC) Al2O3 DBC Very low stray inductance design for high speed operation UL ap... See More ⇒
25MT060WFAPbF Vishay High Power Products "Full Bridge" IGBT MTP (Warp Speed IGBT), 50 A FEATURES Generation 4 warp speed IGBT technology HEXFRED antiparallel diodes with ultrasoft reverse recovery Very low conduction and switching losses Optional SMT thermistor Al2O3 DBC Very low stray inductance design for high speed operation Speed 8 kHz to 60 kHz > 2... See More ⇒
50MT060WHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP (Warp Speed IGBT), 114 A FEATURES Generation 4 warp speed IGBT technology HEXFRED antiparallel diodes with ultrasoft reverse recovery Very low conduction and switching losses Optional SMD thermistor (NTC) Very low junction to case thermal resistance UL approved file E78996 MTP Speed 60 kHz... See More ⇒
VS-70MT060WHTAPbF www.vishay.com Vishay Semiconductors Half Bridge IGBT MTP (Warp 2 Speed IGBT), 70 A FEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient HEXFRED antiparallel diodes with ultrasoft reverse recovery SMD thermistor (NTC) Al2O3 BDC Very low stay inductance design for high speed operation UL approved file E789... See More ⇒
70MT060WHTAPbF www.vishay.com Vishay Semiconductors Half Bridge IGBT MTP (Warp 2 Speed IGBT), 70 A FEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient HEXFRED antiparallel diodes with ultrasoft reverse recovery SMD thermistor (NTC) Al2O3 BDC Very low stay inductance design for high speed operation MTP UL pending Speed ... See More ⇒
VS-50MT060WHTAPbF www.vishay.com Vishay Semiconductors Half Bridge IGBT MTP (Warp Speed IGBT), 114 A FEATURES Gen 4 warp speed IGBT technology HEXFRED antiparallel diodes with ultrasoft reverse recovery Very low conduction and switching losses Optional SMD thermistor (NTC) Very low junction to case thermal resistance UL approved file E78996 MTP ... See More ⇒
Date - 16 Feb, 2011 Data Sheet Issue - P1 WESTCODE An IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0600TB45A Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS ... See More ⇒
SUT061G Dual NPN Bipolar transistor Descriptions General purpose amplifier Recommended for LED Drive Application Features Thermally Enhanced Power PKG Low saturation VCE(sat)= 0.4V Max 2 NPN chips in TESOP-8 Package TESOP-8 Ordering Information Type NO. Marking Package Code SUT061 TESOP-8 SUT061 Year & Week Code Absolute maximum ratings... See More ⇒
AP95T06GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 8.5m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description AP95T06 series are from Advanced Power inno... See More ⇒
AP98T06GP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower Gate Charge RDS(ON) 5m Fast Switching Characteristic ID 80A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistanc... See More ⇒
AP60T06GJ-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 55V Lower On-resistance RDS(ON) 12m Fast Switching Characteristic ID 46A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D TO-251(J) designer with the best combination of fast swi... See More ⇒
AP90T06GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 68V Lower On-resistance RDS(ON) 9.5m Fast Switching Characteristic ID 76A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugged... See More ⇒
AP99LT06GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 145A G RoHS Compliant & Halogen-Free S Description AP99LT06 series are from Advanced Power innovated design and silicon process technology to achieve the lo... See More ⇒
AP98T06GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower Gate Charge RDS(ON) 5m Fast Switching Characteristic ID 80A G RoHS Compliant & Halogen-Free S Description AP98T06 series are from Advanced Power innovated design and silicon process technology to achieve the lowest p... See More ⇒
AP55T06GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 18m RoHS Compliant & Halogen-Free ID 29A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- G resist... See More ⇒
AP98T06GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower Gate Charge RDS(ON) 5m Fast Switching Characteristic ID 80A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized ... See More ⇒
AP95T06BGP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 9m Fast Switching Characteristic ID 75A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, G low on-resista... See More ⇒
AP99T06GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 4.2m Fast Switching Characteristic ID 120A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugged... See More ⇒
AP98T06GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Low On-resistance RDS(ON) 5m Fast Switching Characteristic ID 67A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D rugge... See More ⇒
AP99LT06GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 120A G RoHS Compliant & Halogen-Free S Description AP99LT06 series are from Advanced Power innovated design and silicon process technology to achieve the lo... See More ⇒
AP98T06GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower Gate Charge RDS(ON) 5m Fast Switching Characteristic ID 80A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S ... See More ⇒
AP99T06AGP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Low On-resistance RDS(ON) 4.2m Fast Switching Characteristic ID 135A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz... See More ⇒
AP55T06GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 18m RoHS Compliant & Halogen-Free ID 32.4A G S Description AP55T06 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- G resistance and ... See More ⇒
AP60T06GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 55V Lower On-resistance RDS(ON) 12m Fast Switching Characteristic ID 46A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz... See More ⇒
AP95T06GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 8.5m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge... See More ⇒
AP55T06GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 18m RoHS Compliant & Halogen-Free ID 29A G S Description AP55T06 series are from Advanced Power innovated design and silicon process technology to achiev... See More ⇒
AP95T06GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 8.5m Fast Switching Characteristic ID 75A G RoHS Compliant & Halogen-Free S Description AP95T06 series are from Advanced Power inno... See More ⇒
AP99T06AGI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Low On-resistance RDS(ON) 4.2m Fast Switching Characteristic ID 76A G RoHS Compliant & Halogen-Free S Description AP99T06A series are from Advanced Power innovated design and silicon process technology to achieve the lowes... See More ⇒
AP95T06AGP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 8.5m Fast Switching Characteristic ID 75A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-resis... See More ⇒
AP99LT06GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 145A G RoHS Compliant & Halogen-Free S Description AP99LT06 series are from Advanced Power innovated design and silicon process technology to achieve the lo... See More ⇒
N N-CHANNEL MOSFET MT06N020A MAIN CHARACTERISTICS Package ID 50A VDSS 60V Rdson-max - 18m (@Vgs=10V Qg-typ 34nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Uninterruptible... See More ⇒
N N-CHANNEL IGBT R TT060U060EQ MAIN CHARACTERISTICS Package IC 60 A VCES 600V Vcesat-typ 1.9V Vge=15V APPLICATIONS Welding converters Power Factor Correction PFC Air Condition FEATURES Low gate charge Trench FS ... See More ⇒
N N-CHANNEL MOSFET MT06N008A MAIN CHARACTERISTICS Package ID 90A VDSS 60V Rdson-max - 8.3m (@Vgs=10V Qg-typ 62.6nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Automotive a... See More ⇒
N N-CHANNEL IGBT R ATT060U060EQ MAIN CHARACTERISTICS Package IC 60 A VCE 650V Vcesat-typ 1.9V Vge=15V APPLICATIONS Welding converters Power Factor Correction PFC OBC FEATURES Low gate charge Trench FS Tech... See More ⇒
N N-CHANNEL MOSFET MT06N020AL MAIN CHARACTERISTICS Package ID 50A VDSS 60V Rdson-max - 17m (@Vgs=10V Qg-typ 47.4nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Uninterrupti... See More ⇒
N N-CHANNEL MOSFET MT06N005A MAIN CHARACTERISTICS Package ID 160A VDSS 60V Rdson-max - 4.2m (@Vgs=10V Qg-typ 108nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Uninterrupti... See More ⇒
GOFORD GT060N10 N-Channel Enhancement Mode Power MOSFET Description The GT060N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. General Features Schematic Diagram VDS 100V ID (at VGS = 10V) 120A RDS(ON) (at VGS = 10V) ... See More ⇒
Green Product STT06L01 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 220 @ VGS=10V Surface Mount Package. 100V 3A 260 @ VGS=4.5V D G G S STT SERIES S SOT - 223 ABSOLUTE MAXIMUM RATINGS (TA=25... See More ⇒
CRST065N08N, CRSS063N08N ( ) SkyMOS1 N-MOSFET 85V, 5.6m , 80A Features Product Summary VDS Uses CRM(CQ) advanced SkyMOS1 technology 85V Extremely low on-resistance RDS(on) RDS(on) 5.6m Excellent QgxRDS(on) product(FOM) ID 80A Qualified according to JEDEC criteria Applications Motor control and drive 100% Avalanche Tested 100... See More ⇒
SKST065N08N, SKSS063N08N ( ) SkyMOS1 N-MOSFET 85V, 5.6m , 105A Features Product Summary Uses CRM(CQ) advanced SkyMOS1 technology Wafer Code WCB Extremely low on-resistance RDS(on) VDS 85V Excellent QgxRDS(on) product(FOM) RDS(on) 5.6m ID Qualified according to JEDEC criteria 105A Applications Motor control and drive 100% Avala... See More ⇒
CRST060N10N, CRSS057N10N ( ) SkyMOS1 N-MOSFET 100V, 5.3m , 120A Features Product Summary VDS Uses CRM(CQ) advanced SkyMOS1 technology 100V Extremely low on-resistance RDS(on) RDS(on) 5.3m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteria Applications Motor control and drive 100% Avalanche Tested ... See More ⇒
SMD Type MOSFET N-Channel MOSFET NDT06N03 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 5.30+0.2 -0.2 +0.8 0.50 -0.7 Features 4 VDS (V) = 30V ID = 60 A (VGS = 10V) RDS(ON) 4.1m (VGS = 10V) 0.127 0.80+0.1 max -0.1 RDS(ON) 5.9m (VGS = 4.5V) 1 Gate + 0.1 D 2 Drain 2.3 0.60- 0.1 +0.15 3 Source 4.60 -0.15 4 Drain G S Absolute Ma... See More ⇒
CHENMKO ENTERPRISE CO.,LTD CHT06UPNGP SURFACE MOUNT NPN/PNP Silicon AF Transistor Array VOLTAGE 80 Volts CURRENT 0.5 Ampere APPLICATION * AF input stages and driver applicationon equipment. * Other switching applications. FEATURE SC-74/SOT-457 * Small surface mounting type. (SC-74/SOT-457) * High current gain. * Suitable for high packing density. * Low colloector-emitter saturat... See More ⇒
Datasheet 2.2m , 60V, N-Channel Power MOSFET SRT06N022H General Description Symbol The Sanrise SRT06N022H is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior ... See More ⇒
Datasheet 2.7m , 60V, N-Channel Power MOSFET SRT06N027H General Description Symbol The Sanrise SRT06N027H is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable Source 1,2,3 for applications which req... See More ⇒
Datasheet 9.5m , 60V, N-Channel Power MOSFET SRT06N095L General Description Symbol Drain 5,6,7,8 The Sanrise SRT06N095L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable Source 1,2,3 for applications which r... See More ⇒
SSM95T06GP,S N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge BV 60V DSS D Simple drive requirement R 8.5m DS(ON) Fast switching ID 75A G S Description G The SSM95T06S is in a TO-263 package, which is widely used for D S commercial and industrial surface mount applications, and is well suited TO-263 (S) for low voltage applications such as DC/DC converters. The throug... See More ⇒
AGM15T06C-B Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 140 147 -- V GS D DSS Zero Gate Voltage Drain Current V =140V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Volt... See More ⇒
AGM15T06H Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 150 -- -- V GS D Zero Gate Voltage Drain Current V =150V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltage V... See More ⇒
AGM15T06LL Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 150 -- -- V GS D Zero Gate Voltage Drain Current V =150V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltage ... See More ⇒
AGM15T06T Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 150 -- -- V GS D Zero Gate Voltage Drain Current V =150V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltage V... See More ⇒
AGM15T06C General Description Product Summary The AGM15T06C combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal switch and battery BVDSS RDSON ID for load protection applications. 150V 6.5m 140A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to mi... See More ⇒
isc Silicon PNP Darlington Power Transistor WT062 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -5A FE C Collector-Emitter Sustaining Voltage- V = -100V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATI... See More ⇒
Detailed specifications: BUH417D, BUH713, BUH715AF, BUL6825, BUT12AX, BUT56AF, BUW13AW, BUW13W, 2SC2625, T2141, T2141F, T2142, T2142F, T25, T30, T30F, T430
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