T06 Datasheet and Replacement

NPN T06 TO-220C 1 2 3 (TC=25) VCBO 400 V

KST05/06Driver Transistor Collector-Emitter Voltage: VCEO = KST05: 60V 3KST06: 80V Collector Power Dissipation: PC (max) = 350mW Complement to KST55/56 2SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collecto-Base Voltage : KST05 60 V: KST06

VS-100MT060WSPwww.vishay.comVishay SemiconductorsMTP IGBT Power ModulePrimary Rectifier and PFCFEATURES Input rectifier bridge PFC stage with warp 2 IGBT and FRED Pthyperfast diode Very low stray inductance design for high speed operation Integrated thermistor Isolated baseplateMTP UL approved file E78996 (Package example) Designed and qu

VS-25MT060WFAPbFwww.vishay.comVishay SemiconductorsFull Bridge IGBT MTP (Warp Speed IGBT), 50 AFEATURES Gen 4 warp speed IGBT technology HEXFRED antiparallel diodes with ultrasoft reverse recovery Very low conduction and switching losses Optional SMT thermistor Al2O3 DBC Very low stray inductance design for high speed operation Speed 8 kHz t

VS-100MT060WDFwww.vishay.comVishay SemiconductorsPrimary MTP IGBT Power ModuleFEATURES Buck PFC stage with warp 2 IGBT and FRED Pthyperfast diode Integrated thermistor Isolated baseplate Very low stray inductance design for high speed operation Designed and qualified for industrial level Material categorization: for definitions of compliance MTPple

70MT060WHTAPbFVishay High Power Products"Half Bridge" IGBT MTP (Warp 2 Speed IGBT), 70 AFEATURES NPT warp 2 speed IGBT technology withpositive temperature coefficient HEXFRED antiparallel diodes with ultrasoftreverse recovery SMD thermistor (NTC) Al2O3 BDC Very low stay inductance design for high speed operationMTP UL pending Speed 60 kHz to 150 k

70MT060WSPwww.vishay.comVishay SemiconductorsMTP IGBT Power Module Primary Rectifier and PFCFEATURES Input rectifier bridge PFC stage with warp 2 IGBT and FRED Pthyperfast diode Very low stray inductance design for high speed operation Higher switching frequency up to 150 kHz Integrated thermistor MTP Isolated baseplatePRODUCT SUMMARY UL appr

VS-70MT060WSPwww.vishay.comVishay SemiconductorsMTP IGBT Power Module Primary Rectifier and PFCFEATURES Input rectifier bridge PFC stage with warp 2 IGBT and FRED Pthyperfast diode Very low stray inductance design for high speed operation Integrated thermistor Isolated baseplateMTP UL approved file E78996 Designed and qualified for industria

VS-100MT060WDFwww.vishay.comVishay SemiconductorsPrimary MTP IGBT Power ModuleFEATURES Buck PFC stage with warp 2 IGBT and FRED Pthyperfast diode Integrated thermistor Isolated baseplate Compliant to RoHS Directive 2011/65/EU Very low stray inductance design for high speed operationMTP Designed and qualified for industrial levelBENEFITSPRODUCT SU

VS-150MT060WDFwww.vishay.comVishay SemiconductorsMTP IGBT Power ModulePrimary Dual ForwardFEATURES Buck PFC stage with warp 3 IGBT and FRED Pthyperfast diode Integrated thermistor Isolated baseplate Very low stray inductance design for high speed operation Ultrafast switching IGBT Designed and qualified for industrial levelMTP Material categor

50MT060ULSTAPbFVishay High Power Products"Low Side Chopper" IGBT MTP(Ultrafast Speed IGBT), 100 AFEATURES Generation 4 ultrafast speed IGBT technology HEXFRED diode with ultrasoft reverseRoHSrecoveryCOMPLIANT Very low conduction and switching losses Optional SMD thermistor (NTC) Al2O3 DBC Very low stray inductance design for high speed operation

50MT060ULSTAPbFwww.vishay.comVishay Semiconductors"Low Side Chopper" IGBT MTP (Ultrafast Speed IGBT), 100 AFEATURES Generation 4 ultrafast speed IGBT technology HEXFRED diode with ultrasoft reverserecovery Very low conduction and switching losses Optional SMD thermistor (NTC) Al2O3 DBC Very low stray inductance design for high speed operation UL ap

25MT060WFAPbFVishay High Power Products"Full Bridge" IGBT MTP (Warp Speed IGBT), 50 AFEATURES Generation 4 warp speed IGBT technology HEXFRED antiparallel diodes with ultrasoftreverse recovery Very low conduction and switching losses Optional SMT thermistor Al2O3 DBC Very low stray inductance design for high speed operation Speed 8 kHz to 60 kHz > 2

50MT060WHTAPbFVishay High Power Products"Half Bridge" IGBT MTP (Warp Speed IGBT), 114 AFEATURES Generation 4 warp speed IGBT technology HEXFRED antiparallel diodes with ultrasoftreverse recovery Very low conduction and switching losses Optional SMD thermistor (NTC) Very low junction to case thermal resistance UL approved file E78996MTP Speed 60 kHz

VS-70MT060WHTAPbFwww.vishay.comVishay SemiconductorsHalf Bridge IGBT MTP (Warp 2 Speed IGBT), 70 AFEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient HEXFRED antiparallel diodes with ultrasoft reverse recovery SMD thermistor (NTC) Al2O3 BDC Very low stay inductance design for high speed operation UL approved file E789

70MT060WHTAPbFwww.vishay.comVishay SemiconductorsHalf Bridge IGBT MTP (Warp 2 Speed IGBT), 70 AFEATURES NPT warp 2 speed IGBT technology withpositive temperature coefficient HEXFRED antiparallel diodes with ultrasoftreverse recovery SMD thermistor (NTC) Al2O3 BDC Very low stay inductance design for high speed operationMTP UL pending Speed

VS-50MT060WHTAPbFwww.vishay.comVishay SemiconductorsHalf Bridge IGBT MTP (Warp Speed IGBT), 114 AFEATURES Gen 4 warp speed IGBT technology HEXFRED antiparallel diodes with ultrasoft reverse recovery Very low conduction and switching losses Optional SMD thermistor (NTC) Very low junction to case thermal resistance UL approved file E78996MTP

Date:- 16 Feb, 2011 Data Sheet Issue:- P1 WESTCODEAn IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0600TB45A Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800 V VGES Peak gate emitter voltage 20 V MAXIMUM RATINGS UNITS

SUT061GDual NPN Bipolar transistorDescriptions General purpose amplifier Recommended for LED Drive Application Features Thermally Enhanced Power PKG Low saturation: VCE(sat)= 0.4V Max 2 NPN chips in TESOP-8 Package TESOP-8 Ordering Information Type NO. Marking Package Code SUT061 TESOP-8 SUT061 : Year & Week Code Absolute maximum ratings

AP95T06GS/P-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 8.5m Fast Switching Characteristic ID 75AG RoHS Compliant & Halogen-FreeSDescriptionAP95T06 series are from Advanced Power inno

AP98T06GPRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 60V Lower Gate Charge RDS(ON) 5m Fast Switching Characteristic ID 80AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resistanc

AP60T06GJ-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 55V Lower On-resistance RDS(ON) 12m Fast Switching Characteristic ID 46AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDTO-251(J)designer with the best combination of fast swi

AP90T06GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 68V Lower On-resistance RDS(ON) 9.5m Fast Switching Characteristic ID 76AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugged

AP99LT06GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 145AG RoHS Compliant & Halogen-FreeSDescriptionAP99LT06 series are from Advanced Power innovated design andsilicon process technology to achieve the lo

AP98T06GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 60V Lower Gate Charge RDS(ON) 5m Fast Switching Characteristic ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAP98T06 series are from Advanced Power innovated designand silicon process technology to achieve the lowest p

AP55T06GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 18m RoHS Compliant & Halogen-Free ID 29AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design, low on-Gresist

AP98T06GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 60V Lower Gate Charge RDS(ON) 5m Fast Switching Characteristic ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized

AP95T06BGPRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 9m Fast Switching Characteristic ID 75AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design,Glow on-resista

AP99T06GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 4.2m Fast Switching Characteristic ID 120AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, rugged

AP98T06GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Low On-resistance RDS(ON) 5m Fast Switching Characteristic ID 67AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDrugge

AP99LT06GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 120AG RoHS Compliant & Halogen-FreeSDescriptionAP99LT06 series are from Advanced Power innovated design andsilicon process technology to achieve the lo

AP98T06GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 60V Lower Gate Charge RDS(ON) 5m Fast Switching Characteristic ID 80AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DS

AP99T06AGP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Low On-resistance RDS(ON) 4.2m Fast Switching Characteristic ID 135AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggediz

AP55T06GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 18m RoHS Compliant & Halogen-Free ID 32.4AGSDescriptionAP55T06 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-Gresistance and

AP60T06GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 55V Lower On-resistance RDS(ON) 12m Fast Switching Characteristic ID 46AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggediz

AP95T06GS/P-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 8.5m Fast Switching Characteristic ID 75AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, rugge

AP55T06GI-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 18m RoHS Compliant & Halogen-Free ID 29AGSDescriptionAP55T06 series are from Advanced Power innovated design andsilicon process technology to achiev

AP95T06GS/P-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 8.5m Fast Switching Characteristic ID 75AG RoHS Compliant & Halogen-FreeSDescriptionAP95T06 series are from Advanced Power inno

AP99T06AGI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Low On-resistance RDS(ON) 4.2m Fast Switching Characteristic ID 76AG RoHS Compliant & Halogen-FreeSDescriptionAP99T06A series are from Advanced Power innovated design andsilicon process technology to achieve the lowes

AP95T06AGPRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 60V Lower On-resistance RDS(ON) 8.5m Fast Switching Characteristic ID 75AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-resis

AP99LT06GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 3.5m Fast Switching Characteristic ID 145AG RoHS Compliant & Halogen-FreeSDescriptionAP99LT06 series are from Advanced Power innovated design andsilicon process technology to achieve the lo

N N-CHANNEL MOSFET MT06N020A MAIN CHARACTERISTICS Package ID 50A VDSS 60V Rdson-max - 18m (@Vgs=10V Qg-typ 34nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Uninterruptible

N N-CHANNEL IGBT R TT060U060EQ MAIN CHARACTERISTICS Package IC 60 A VCES 600V Vcesat-typ 1.9V Vge=15VAPPLICATIONS Welding converters Power Factor Correction PFC Air Condition FEATURES Low gate charge Trench FS

N N-CHANNEL MOSFET MT06N008A MAIN CHARACTERISTICS Package ID 90A VDSS 60V Rdson-max - 8.3m (@Vgs=10V Qg-typ 62.6nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Automotive a

N N-CHANNEL IGBT R ATT060U060EQ MAIN CHARACTERISTICS Package IC 60 A VCE 650V Vcesat-typ 1.9V Vge=15VAPPLICATIONS Welding converters Power Factor Correction PFC OBC FEATURES Low gate charge Trench FS Tech

N N-CHANNEL IGBT RTT060U065FQ MAIN CHARACTERISTICS Package IC 60A VCES 650V Vcesat-typ 1.7V APPLICATIONS Power factor corrector (PFC) PFC Energy Storage FEATURES Low gate charge Trench FS , Trench FS Technology, RoHS

N N-CHANNEL MOSFET MT06N020AL MAIN CHARACTERISTICS Package ID 50A VDSS 60V Rdson-max - 17m (@Vgs=10V Qg-typ 47.4nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Uninterrupti

N N-CHANNEL MOSFET MT06N005A MAIN CHARACTERISTICS Package ID 160A VDSS 60V Rdson-max - 4.2m (@Vgs=10V Qg-typ 108nC APPLICATIONS High power DC/DC DC/DC converters and switch mode power supplies DC motor control Uninterrupti

N N-CHANNEL IGBT RTT060U065FB MAIN CHARACTERISTICS Package IC 60A VCES 650V Vcesat-typ 1.7V APPLICATIONS Power factor corrector (PFC) PFC Energy Storage FEATURES Low gate charge Trench FS , Trench FS Technology, RoHS

GOFORDGT060N10N-Channel Enhancement Mode Power MOSFETDescriptionThe GT060N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications.General FeaturesSchematic Diagram VDS 100V ID (at VGS = 10V) 120A RDS(ON) (at VGS = 10V)

GreenProductSTT06L01aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.220 @ VGS=10VSurface Mount Package.100V 3A260 @ VGS=4.5V D G GSSTT SERIES S SOT - 223 ABSOLUTE MAXIMUM RATINGS (TA=25

CRST065N08N, CRSS063N08N() SkyMOS1 N-MOSFET 85V, 5.6m, 80AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 85V Extremely low on-resistance RDS(on) RDS(on)5.6m Excellent QgxRDS(on) product(FOM) ID 80A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested100

SKST065N08N, SKSS063N08N() SkyMOS1 N-MOSFET 85V, 5.6m, 105AFeatures Product Summary Uses CRM(CQ) advanced SkyMOS1 technology Wafer Code WCB Extremely low on-resistance RDS(on) VDS 85V Excellent QgxRDS(on) product(FOM) RDS(on)5.6mID Qualified according to JEDEC criteria 105AApplications Motor control and drive100% Avala

CRST060N10N, CRSS057N10N() SkyMOS1 N-MOSFET 100V, 5.3m, 120AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 100V Extremely low on-resistance RDS(on) RDS(on)5.3m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested

SMD Type MOSFETN-Channel MOSFETNDT06N03TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.15.30+0.2-0.2 +0.80.50 -0.7 Features4 VDS (V) = 30V ID = 60 A (VGS = 10V) RDS(ON) 4.1m (VGS = 10V)0.1270.80+0.1 max-0.1 RDS(ON) 5.9m (VGS = 4.5V)1 Gate+ 0.1D2 Drain2.3 0.60- 0.1+0.15 3 Source4.60 -0.154 DrainGS Absolute Ma

SVT068R5NT/D/S/L5 80A60V N 2S D1 8SVT068R5NT/D/S/L5 N MOS S 2 7 D LVMOS D1 S 3 6G 4 5 D

CHENMKO ENTERPRISE CO.,LTDCHT06UPNGPSURFACE MOUNT NPN/PNP Silicon AF Transistor Array VOLTAGE 80 Volts CURRENT 0.5 AmpereAPPLICATION* AF input stages and driver applicationon equipment.* Other switching applications.FEATURESC-74/SOT-457* Small surface mounting type. (SC-74/SOT-457)* High current gain. * Suitable for high packing density.* Low colloector-emitter saturat

Datasheet 2.2m, 60V, N-Channel Power MOSFET SRT06N022H General Description Symbol The Sanrise SRT06N022H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior

Datasheet 2.7m, 60V, N-Channel Power MOSFET SRT06N027H General Description Symbol The Sanrise SRT06N027H is a low voltage power Drain 5,6,7,8MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable Source 1,2,3for applications which req

Datasheet 9.5m, 60V, N-Channel Power MOSFET SRT06N095L General Description Symbol Drain 5,6,7,8The Sanrise SRT06N095L is a low voltage power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4extremely low on resistance, low gate charge and fast switching time, making it especially suitable Source 1,2,3for applications which r

SSM95T06GP,SN-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low gate-charge BV 60VDSSDSimple drive requirement R 8.5mDS(ON)Fast switching ID 75AGSDescriptionGThe SSM95T06S is in a TO-263 package, which is widely used forDScommercial and industrial surface mount applications, and is well suited TO-263 (S)for low voltage applications such as DC/DC converters. The throug

isc Silicon PNP Darlington Power Transistor WT062DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -5AFE CCollector-Emitter Sustaining Voltage-: V = -100V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and lowfrequency switching applications.ABSOLUTE MAXIMUM RATI