A44 Todos los transistores

 

A44 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: A44

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 500 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 7 pF

Ganancia de corriente contínua (hfe): 50

Empaquetado / Estuche: SOT89

Búsqueda de reemplazo de transistor bipolar A44

 

 

A44 Datasheet (PDF)

1.1. mpsa44-bk.pdf Size:86K _update

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MPSA44-BK MPSA44-BK High voltage Si-epitaxial planar transistors NPN NPN Hochspannungs-Si-Epitaxial Planar-Transistoren Version 2011-07-07 Power dissipation 625 mW ±0.1 Verlustleistung 4.6 Plastic case TO-92 Kunststoffgehäuse (10D3) Weight approx. 0.18 g Gewicht ca. E B C Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Special packaging bul

1.2. pxta44.pdf Size:104K _update

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MCC Micro Commercial Components TM PXTA44 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features NPN Silicon High Low Collector-Emitter Saturation Voltage Voltage Transistor Epoxy meets UL 94V-0 flammability rating Moisure Sensitivity Level 1 500mW • Lead Free Finish/RoHS Compliant("P" Suffix designates

 1.3. mpsa44u.pdf Size:1102K _update

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1.4. pzta45 pzta44.pdf Size:106K _update

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UNISONIC TECHNOLOGIES CO., LTD PZTA44/45 NPN SILICON TRANSISTOR NPN HIGH VOLTAGE TRANSISTOR FEATURES * Collector-emitter voltage: V =400V(PZTA44) CEO V =350V(PZTA45) CEO * Collector current up to 300mA APPLICATION * Telephone switching * High voltage switch ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3

 1.5. cmlta44.pdf Size:449K _upd

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CMLTA44 www.centralsemi.com SURFACE MOUNT SILICON EXTREMELY HIGH VOLTAGE DESCRIPTION: NPN TRANSISTOR The CENTRAL SEMICONDUCTOR CMLTA44 is an NPN high voltage transistor, epoxy molded in a space saving SOT-563 surface mount package and designed for extremely high voltage applications. MARKING CODE: 44C SOT-563 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage

1.6. pmbta44.pdf Size:96K _upd

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PMBTA44 400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 — 22 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. 1.2 Features Low current (max. 300 mA) High voltage (max. 400 V) AEC-Q101 qua

1.7. dmbta44.pdf Size:178K _upd

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DC COMPONENTS CO., LTD. DMBTA44 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for applications requiring high breakdown voltage. SOT-23 .020(0.50) Pinning .012(0.30) 1 = Base 2 = Emitter 3 .063(1.60) .108(0.65) 3 = Collector .055(1.40) .089(0.25) 1 2 Absolute Maximum Ratings(TA=25oC) .045(1.15) .034(0.85) Char

1.8. chta44zgp.pdf Size:138K _upd

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CHENMKO ENTERPRISE CO.,LTD CHTA44ZGP SURFACE MOUNT NPN SILICON Transistor VOLTAGE 400 Volts CURRENT 0.3 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. ( SC-73/SOT-223 ) 1.65+0.15 6.50+0.20 * Suitable for high packing density. 0.90+0.05 2.0+0.3 3.00+0.10 * High saturation curre

1.9. sia443dj.pdf Size:190K _upd-mosfet

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New Product SiA443DJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free VDS (V) RDS(on) (Ω)ID (A) Qg (Typ) • TrenchFET® Power MOSFET 0.045 at VGS = - 4.5 V - 9a • New Thermally Enhanced PowerPAK® RoHS 0.063 at VGS = - 2.5 V - 20 - 9a 9 nC COMPLIANT SC-70 Package 0.088 at VGS = - 1.8 V - Small Footprint Area - 9a - Low On-Resis

1.10. sia447dj.pdf Size:226K _upd-mosfet

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New Product SiA447DJ Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.) • Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area 0.0135 at VGS = - 4.5 V - 12a - Low On-Resistance 0.0194 at VGS = - 2.5 V - 12a - 12 31 nC • 100 % Rg Tested 0.0344 at VGS = - 1.8 V - 12a

1.11. sia441dj.pdf Size:204K _upd-mosfet

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SiA441DJ Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ()ID (A) Qg (Typ.) • TrenchFET® Power MOSFET 0.047 at VGS = - 10 V - 12a • Thermally Enhanced PowerPAK® - 40 11 nC 0.065 at VGS = - 4.5 V SC-70 Package - 12a - Small Footprint Area - Low On-Resistance PowerPAK SC-70

1.12. sia449dj.pdf Size:219K _upd-mosfet

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New Product SiA449DJ Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.) • Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area 0.020 at VGS = - 10 V - 12a - Low On-Resistance - 30 0.024 at VGS = - 4.5 V - 12a 23.1 nC • 100 % Rg Tested 0.038 at VGS = - 2.5 V - 12a

1.13. sia445edj.pdf Size:228K _upd-mosfet

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New Product SiA445EDJ Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) Max. ID (A) Qg (Typ.) Definition • TrenchFET® Power MOSFET 0.0165 at VGS = - 4.5 V - 12a • Thermally Enhanced PowerPAK® 0.0185 at VGS = - 3.7 V - 20 - 12a 23 nC SC-70 Package 0.0300 at VGS = - 2.5 V - Small

1.14. sia440dj.pdf Size:230K _upd-mosfet

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SiA440DJ Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) RDS(on) () (Max.) ID (A)a Qg (Typ.) • 100 % Rg and UIS Tested 0.026 at VGS = 10 V • Material categorization: 12 For definitions of compliance please see 0.028 at VGS = 4.5 V 12 40 6.9 nC www.vishay.com/doc?99912 0.029 at VGS = 3.7 V 12 0.035 at VGS =

1.15. sia448dj.pdf Size:224K _upd-mosfet

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New Product SiA448DJ Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) RDS(on) () Max. ID (A)a Qg (Typ.) • New Thermally Enhanced PowerPAK® SC-70 Package 0.0150 at VGS = 4.5 V 12 - Small Footprint Area 0.0166 at VGS = 2.5 V 12 - Low On-Resistance 20 13 nC 0.0200 at VGS = 1.8 V 12 • 100 % Rg Tested 0.0324

1.16. sia444djt.pdf Size:199K _upd-mosfet

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New Product SiA444DJT Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.) Definition 0.017 at VGS = 10 V 12 • TrenchFET® Power MOSFET 30 5 nC • New Thermally Enhanced PowerPAK® 0.022 at VGS = 4.5 V 12 SC-70 Package - Small Footprint Area Thin PowerPAK SC-70-6L-Single -

1.17. sia446dj.pdf Size:258K _upd-mosfet

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SiA446DJ www.vishay.com Vishay Siliconix N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • ThunderFET® technology optimizes balance VDS (V) RDS(on) () MAX. ID (A) a Qg (TYP.) of RDS(on), Qg, Qsw and Qoss 0.177 at VGS = 10 V 7.7 • 100 % Rg and UIS tested 150 0.185 at VGS = 7.5 V 7.6 4.3 nC • Material categorization: 0.250 at VGS = 6 V 4 For definitions of compliance

1.18. mpsa44re.pdf Size:170K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA44/D High Voltage Transistor NPN Silicon MPSA44 Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol Value Unit CASE 2904, STYLE 1 CollectorEmitter Voltage VCEO 400 Vdc TO92 (TO226AA) CollectorBase Voltage VCBO 500 Vdc EmitterBase Voltage VEBO 6.0 Vdc Collector Curre

1.19. mpsa44 4.pdf Size:47K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA44 NPN high-voltage transistor 1999 Apr 27 Product specification Supersedes data of 1998 Nov 26 Philips Semiconductors Product specification NPN high-voltage transistor MPSA44 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 400 V). 1 collector 2 base APPLICATIONS 3 emitter Telecommu

1.20. pzta44 4.pdf Size:48K _philips2

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 PZTA44 NPN high-voltage transistor 1999 May 21 Product specification Supersedes data of 1998 Nov 26 Philips Semiconductors Product specification NPN high-voltage transistor PZTA44 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 400 V). 1 base 2, 4 collector APPLICATIONS 3 emitter Teleco

1.21. pmbta44.pdf Size:96K _philips2

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PMBTA44 400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 22 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. 1.2 Features Low current (max. 300 mA) High voltage (max. 400 V) AEC-Q101 qualifie

1.22. pzta44.pdf Size:107K _philips2

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DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 PZTA44 NPN high-voltage transistor Product data sheet 1999 May 21 Supersedes data of 1998 Nov 26 NXP Semiconductors Product data sheet NPN high-voltage transistor PZTA44 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 400 V). 1 base 2, 4 collector APPLICATIONS 3 emitter Telecommunic

1.23. fqa44n30.pdf Size:754K _fairchild_semi

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April 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 43.5A, 300V, RDS(on) = 0.069? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 120 nC) planar stripe, DMOS technology. Low Crss ( typical 75 pF) This advanced technology has been especially

1.24. fqa44n10.pdf Size:569K _fairchild_semi

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December 2000 TM QFET QFET QFET QFET FQA44N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 48A, 100V, RDS(on) = 0.039Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 48 nC) planar stripe, DMOS technology. • Low Crss ( typical 85 pF) This advanced technology is espe

1.25. fqa44n08.pdf Size:663K _fairchild_semi

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August 2000 TM QFET QFET QFET QFET FQA44N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 49.8A, 80V, RDS(on) = 0.034Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 38 nC) planar stripe, DMOS technology. • Low Crss ( typical 90 pF) This advanced technology has been

1.26. sia443dj.pdf Size:188K _vishay

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1.27. sia444djt.pdf Size:153K _vishay

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1.28. czta44hc.pdf Size:596K _central

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CZTA44HC SURFACE MOUNT www.centralsemi.com HIGH CURRENT DESCRIPTION: HIGH VOLTAGE The CENTRAL SEMICONDUCTOR CZTA44HC type is NPN SILICON TRANSISTOR a surface mount epoxy molded silicon planar epitaxial transistor designed for extremely high voltage and high current applications. MARKING: FULL PART NUMBER SOT-223 CASE SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Colle

1.29. czta44.pdf Size:527K _central

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CZTA44 www.centralsemi.com SURFACE MOUNT EXTREMELY HIGH VOLTAGE DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CZTA44 type is a surface mount epoxy molded silicon planar epitaxial transistor designed for extremely high voltage applications. MARKING: FULL PART NUMBER SOT-223 CASE SOT-223 CASE MAXIMUM RATINGS: (TA=25C) SYMBOL UNITS Collector-Base Voltage VCBO 450 V

1.30. cmpta44.pdf Size:321K _central

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CMPTA44 www.centralsemi.com SURFACE MOUNT EXTREMELY HIGH VOLTAGE DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPTA44 type is a surface mount epoxy molded silicon planar epitaxial transistor designed for extremely high voltage applications. MARKING CODE: C3Z SOT-23 CASE MAXIMUM RATINGS: (TA=25C) SYMBOL UNITS Collector-Base Voltage VCBO 450 V Collector-Emitter Vo

1.31. mpsa44-d.pdf Size:66K _onsemi

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MPSA44 Preferred Device High Voltage Transistor NPN Silicon Features http://onsemi.com Pb-Free Packages are Available* COLLECTOR MAXIMUM RATINGS 3 Rating Symbol Value Unit Collector -Emitter Voltage VCEO 400 Vdc 2 BASE Collector -Base Voltage VCBO 500 Vdc Emitter -Base Voltage VEBO 6.0 Vdc 1 Collector Current - Continuous IC 300 mAdc EMITTER Total Device Dissipation @ TA = 25

1.32. dra5a44w.pdf Size:426K _panasonic

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This product complies with the RoHS Directive (EU 2002/95/EC). DRA5A44W Silicon PNP epitaxial planar type For digital circuits Complementary to DRC5A44W  Features  Package  Low collector-emitter saturation voltage VCE(sat)  Code  Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B  Eco-friendly Halogen-free package  Pin Name 1: B

1.33. drc9a44w.pdf Size:286K _panasonic

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This product complies with the RoHS Directive (EU 2002/95/EC). DRC9A44W Silicon NPN epitaxial planar type For digital circuits Complementary to DRA9A44W DRC5A44W in SSMini3 type package  Features  Package  Low collector-emitter saturation voltage VCE(sat)  Code  Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B  Eco-friendly Halogen-fr

1.34. dra9a44e.pdf Size:411K _panasonic

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This product complies with the RoHS Directive (EU 2002/95/EC). DRA9A44E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC9A44E DRA5A44E in SSMini3 type package  Features  Package  Low collector-emitter saturation voltage VCE(sat)  Code  Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B  Eco-friendly Halogen-fr

1.35. drc5a44e.pdf Size:289K _panasonic

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This product complies with the RoHS Directive (EU 2002/95/EC). DRC5A44E Silicon NPN epitaxial planar type For digital circuits Complementary to DRA5A44E  Features  Package  Low collector-emitter saturation voltage VCE(sat)  Code  Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B  Eco-friendly Halogen-free package  Pin Name 1: B

1.36. drc3a44e.pdf Size:292K _panasonic

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This product complies with the RoHS Directive (EU 2002/95/EC). DRC3A44E Silicon NPN epitaxial planar type For digital circuits Complementary to DRA3A44E DRC9A44E in SSSMini3 type package  Features  Package  Low collector-emitter saturation voltage VCE(sat)  Code  Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B  Eco-friendly Halo

1.37. drc5a44w.pdf Size:290K _panasonic

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This product complies with the RoHS Directive (EU 2002/95/EC). DRC5A44W Silicon NPN epitaxial planar type For digital circuits Complementary to DRA5A44W  Features  Package  Low collector-emitter saturation voltage VCE(sat)  Code  Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B  Eco-friendly Halogen-free package  Pin Name 1: B

1.38. draqa44t.pdf Size:231K _panasonic

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This product complies with the RoHS Directive (EU 2002/95/EC). DRAQA44T Silicon PNP epitaxial planar type For digital circuits Complementary to DRCQA44T DRA3144T in USSMini3 type package  Features  Package  High forward current transfer ratio hFE with excellent linearity  Code  Low collector-emitter saturation voltage VCE(sat) USSMini3-F1-B  Contributes to miniaturi

1.39. dra5a44e.pdf Size:414K _panasonic

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This product complies with the RoHS Directive (EU 2002/95/EC). DRA5A44E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC5A44E  Features  Package  Low collector-emitter saturation voltage VCE(sat)  Code  Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B  Eco-friendly Halogen-free package  Pin Name 1: B

1.40. drcqa44e.pdf Size:353K _panasonic

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This product complies with the RoHS Directive (EU 2002/95/EC). DRCQA44E Silicon NPN epitaxial planar type For digital circuits Complementary to DRAQA44E DRC3A44E in USSMini3 type package  Features  Package  Low collector-emitter saturation voltage VCE(sat)  Code  Contributes to miniaturization of sets, reduction of component count. USSMini3-F1-B  Eco-friendly Halogen-

1.41. drcqa44t.pdf Size:231K _panasonic

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This product complies with the RoHS Directive (EU 2002/95/EC). DRCQA44T Silicon NPN epitaxial planar type For digital circuits Complementary to DRAQA44T DRC3144T in USSMini3 type package  Features  Package  High forward current transfer ratio hFE with excellent linearity  Code  Low collector-emitter saturation voltage VCE(sat) USSMini3-F1-B  Contributes to miniatu

1.42. dra3a44e.pdf Size:292K _panasonic

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This product complies with the RoHS Directive (EU 2002/95/EC). DRA3A44E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC3A44E DRA9A44E in SSSMini3 type package  Features  Package  Low collector-emitter saturation voltage VCE(sat)  Code  Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B  Eco-friendly Haloge

1.43. drc3a44w.pdf Size:293K _panasonic

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This product complies with the RoHS Directive (EU 2002/95/EC). DRC3A44W Silicon NPN epitaxial planar type For digital circuits Complementary to DRA3A44W DRC9A44W in SSSMini3 type package  Features  Package  Low collector-emitter saturation voltage VCE(sat)  Code  Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B  Eco-friendly Haloge

1.44. drc9a44e.pdf Size:400K _panasonic

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This product complies with the RoHS Directive (EU 2002/95/EC). DRC9A44E Silicon NPN epitaxial planar type For digital circuits Complementary to DRA9A44E DRC5A44E in SSMini3 type package  Features  Package  Low collector-emitter saturation voltage VCE(sat)  Code  Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B  Eco-friendly Halogen-fr

1.45. dra9a44w.pdf Size:423K _panasonic

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This product complies with the RoHS Directive (EU 2002/95/EC). DRA9A44W Silicon PNP epitaxial planar type For digital circuits Complementary to DRC9A44W DRA5A44W in SSMini3 type package  Features  Package  Low collector-emitter saturation voltage VCE(sat)  Code  Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B  Eco-friendly Halogen-

1.46. mpsa44 mpsa45-utc.pdf Size:30K _utc

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UTC MPSA 44/ 45 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=400V(MPSA44) VCEO=350V(MPSA45) *Collector current up to 300mA *Complement to MPSA94/93 *Collector Dissipation: Pc(max)=625mW APPLICATION *Telephone switching TO-92 *High voltage switch 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Operating temperature range

1.47. mpsa44h.pdf Size:176K _utc

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UNISONIC TECHNOLOGIES CO., LTD MPSA44H NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES * Collector-Emitter Voltage:* V =400V CEO * Collector Current up to 300mA ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MPSA44HL-AB3-R MPSA44HG-AB3-R SOT-89 B C E Tape Reel MPSA44HL-T92-B MPSA44HG-T92-B TO-92 E B C Tape Box MP

1.48. mpsa44.pdf Size:437K _secos

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MPSA44 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES High Voltage NPN Transistor G H Emitter ?? J Millimeter REF. A D Min. Max. A 4.40 4.70 B B 4.30 4.70 ?? C 12.70 - Base K D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 ?? E C F G 1.27 TYP. Collector H 1.10 - J 2.

1.49. mmbta44.pdf Size:441K _secos

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MMBTA44 500V, 0.2A NPN Silicon Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES ? High Voltage Transistor A L 3 3 MARKING Top View C B 1 1 2 3D 2 K E D PACKING INFORMATION Collector H J F G ?? Package MPQ Leader Size Millimeter Millimeter REF. REF. SOT-23 3K 7 inch Min. M

1.50. mpsa44 45.pdf Size:273K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS MPSA44 MPSA45 TO-92 Plastic Package C B E High Voltage Transistors Complementary of MPSA44 is MPSA94 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL MPSA44 MPSA45 UNITS VCBO Collector Base Voltage 500 400 V VCEO Collector Emitter Voltage 400 350 V VEBO E

1.51. cmbta44.pdf Size:134K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBTA44 PIN CONFIGURATION (NPN) SOT-23 1 = BASE 2 = EMITTER Formed SMD Package 3 = COLLECTOR 3 1 2 Marking Code is =3Z Designed for Extremely High Voltage Applications ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL VALUE UNITS Collector Base Volt

1.52. pzta44.pdf Size:392K _cdil

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR PZTA44 SOT-223 Formed SMD Package High Voltage Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS Collector Base Voltage VCBO 500 V VCEO Collector Emitter Voltage 400 V VEBO Emitter Base Voltage 6.0 V IC Collector Current (DC) 300 mA Col

1.53. mpsa44 mpsa45.pdf Size:359K _kec

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SEMICONDUCTOR MPSA44/45 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. B C FEATURES High Breakdown Voltage. Collector Power Dissipation : PC=625mW. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D MAXIMUM RATING (Ta=25 ) D 0.45 E 1.00 CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 0.85 MPSA44 500 H 0.45 Collector-Base _ VCBO H V J 14.00

1.54. pzta44.pdf Size:39K _kec

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SEMICONDUCTOR PZTA44 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. A TELEPHONE APPLICATION. H L 2 FEATURES High Breakdown Voltage. K E B Collector Power Dissipation : PC=2W(TC=25 ) 1 3 J G F F MAXIMUM RATING (Ta=25 ) DIM MILLIMETERS 1 2 3 _ CHARACTERISTIC SYMBOL RATING UNIT A 6.5 + 0.2 C _ B 3.5 + 0.2 VCBO Collector-Base Voltage 500 V C 1.8

1.55. mmbta44.pdf Size:315K _kec

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A44

SEMICONDUCTOR MMBTA44 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES High Breakdown Voltage. Collector Power Dissipation : PC=350mW. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-BaseVoltage 450 V VCEO Collector-EmitterVoltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current 300 mA PC * Collector Power Dissi

1.56. a44.pdf Size:173K _htsemi

A44

A44 TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Low Collector-Emitter Saturation Voltage High Breakdown Voltage 2. COLLECTOR 3. EMITTER MARKING: A44 MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current 300 mA PC Collector P

1.57. mmbta44.pdf Size:694K _htsemi

A44

MMBTA44 TRANSISTOR(NP) SOT–23 FEATURES ? High Collector-Emitter Voltage ? Complement to MMBTA94 MARKING: 3D 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25? unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit V Collector-Base Voltage 500 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current 100 mA C P Collector Po

1.58. mmbta44.pdf Size:235K _gsme

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A44

? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GMA44 MAXIMUM RATINGS ¦MAXIMUM RATINGS ????? MAXIMUM RATINGS Characteristic ???? Symbol ?? Rating ??? Unit ?? VCEO 400 V Collector-Emitter Voltage ???-???? Collector-Base Voltage ???-??? VCBO 400 V Emitter-Base Voltage ???-???? VEBO 7 V

1.59. a44.pdf Size:356K _lge

A44
A44

A44(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High voltage MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V Collector Current -Continuous IC 0.2 A Dimensions in inches and (millimeters) Collector Power D

1.60. pzta44.pdf Size:490K _lge

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A44

PZTA44 SOT-223 Transistor(NPN) 1. BASE SOT-223 2. COLLECTOR 1 3. EMITTER Features Low current : 300mA(max) High voltage: VCEO=400V MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 6 V IC Collector Current

1.61. mpsa44.pdf Size:911K _wietron

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MPSA44 High-Voltage NPN Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 400 Vdc Collector-Base Voltage VCBO 400 Vdc Emitter-Base VOltage VEBO 5.0 Vdc Collector Current IC 200 mAdc PD 0.625 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C Storage, Temperatu

1.62. pzta44.pdf Size:268K _wietron

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A44

PZTA44 NPN Silicon Planar Epitaxial Transistor COLLECTOR 2, 4 4 1. BASE 2.COLLECTOR 3.EMITTER BASE 4.COLLECTOR 1 1 2 3 3 SOT-223 EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Symbol Rating Value Unit V Collector-Emitter Voltage CEO V 400 VCBO Collector-Base Voltage 500 V VEBO Emitter-Base Voltage 6 V IC(DC) Collector Current (DC) 300 mA PD Total Device Disspation TA=25?C

1.63. wtma44.pdf Size:178K _wietron

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A44

WTMA44 NPN Epitaxial Planar Transistors SOT-89 P b Lead(Pb)-Free 1 *Low Collector-Emitter Saturation Voltage 2 1. BASE 3 2. COLLECTOR *High Breakdown Voltage 3. EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25?C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage 500 VCEO V Collector-Emitter Voltage 400 VEBO V Emitter-Base Voltage 6 Collector Current IC 300 mA Collector Power D

1.64. mmbta44.pdf Size:258K _wietron

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MMBTA44 COLLECTOR 3 High-Voltage NPN Transistor SOT-23 3 Surface Mount 1 BASE 1 2 2 EMITTER Maximum Ratings Rating Symbol Value Unit C ollector-E mitter V oltage V 400 Vdc CEO C ollector-B ase V oltage VCBO 450 Vdc E mitter-B as e V Oltage VEBO 6.0 Vdc C ollector C urrent-C ontinuous IC 300 mAdc Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipation

1.65. hmbta44.pdf Size:37K _hsmc

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A44

Spec. No. : HN200208 HI-SINCERITY Issued Date : 1993.06.23 Revised Date : 2004.09.08 MICROELECTRONICS CORP. Page No. : 1/4 HMBTA44 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBTA44 is designed for application requires high voltage. Features SOT-23 • High voltage: VCEO=400V(min) at IC=1mA • High current: IC=300mA at 25°C • Complementary with HMBTA94 Absolute Maximum Rati

1.66. hmpsa44.pdf Size:47K _hsmc

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A44

Spec. No. : HE6358 HI-SINCERITY Issued Date : 1993.01.15 Revised Date : 2004.07.21 MICROELECTRONICS CORP. Page No. : 1/4 HMPSA44 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMPSA44 is designed for application that requires high voltage. Features TO-92 • High Breakdown Voltage: 400(Min) at IC=1mA • High Current Gain: IC=300mA at 25°C • Complementary to HMPSA94 Absolute Max

1.67. btna44a3.pdf Size:243K _cystek

A44
A44

Spec. No. : C211A3 Issued Date : 2003.03.026 CYStech Electronics Corp. Revised Date :2013.11.20 Page No. : 1/6 High Voltage NPN Epitaxial Planar Transistor BTNA44A3 Features • High breakdown voltage. (BV =400V) CEO • Low saturation voltage, typically V (sat) =60mV at I /I 10mA/1mA. CE C B= • Complementary to BTPA94A3 • Pb-free lead plating and halogen-free packag

1.68. btna44n3.pdf Size:255K _cystek

A44
A44

Spec. No. : C210N3-H Issued Date : 2003.06.12 CYStech Electronics Corp. Revised Date : 2010.07.14 Page No. : 1/6 High Voltage NPN Epitaxial Planar Transistor BVCEO 400V IC 300mA BTNA44N3 RCESAT(typ.) 10Ω Features • High breakdown voltage. (BV =400V) CEO • Low saturation voltage, typically V C B CE(sat) = 0.1V at I /I =10mA/1mA. • Complementary to BTPA94N3 •

1.69. btna44m3.pdf Size:234K _cystek

A44
A44

Spec. No. : C211M3 Issued Date : 2013.05.09 CYStech Electronics Corp. Revised Date : 2013.08.05 Page No. : 1/6 High Voltage NPN Epitaxial Planar Transistor BTNA44M3 Features • High breakdown voltage. (BV = 400V) CEO • Low saturation voltage, typically V C B CE(sat) = 60mV at I /I =10mA/1mA. • Complementary to BTPA94M3 Symbol Outline BTNA44M3 SOT-89 B:Base

1.70. bta4403a3.pdf Size:248K _cystek

A44
A44

Spec. No. : C305A3 Issued Date : 2007.10.16 CYStech Electronics Corp. Revised Date : 2012.04.12 Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistor BTA4403A3 Description • The BTA4403A3 is designed for using in driver stage of AF amplifier and general purpose amplification. • Large IC , IC Max .= -0.6A • Low VCE(sat), typically -0.2V at IC/IB = -300mA / -30mA

1.71. sta4470.pdf Size:143K _samhop

A44
A44

STA4470 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 12 @ VGS=10V Suface Mount Package. 40V 11A 16 @ VGS=4.5V PDIP-8 1 (TA=25°C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Units Limit VDS

1.72. a44.pdf Size:458K _can-sheng

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A44

TO-92 Plastic-Encapsulate Transistors A44 TRANSISTOR (NPN) FEATURES TO-92 FEATURES TO-92 FEATURES TO-92 FEATURES TO-92 � High voltage � High voltage � High voltage � High voltage MAXIMUM RATINGS ( MAXIMUM RATINGS ( MAXIMUM RATINGS ( 1. EM T T E R MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2. BASE Symbol Parameter Value Units Symbol Parameter Value Units Symbol Pa

1.73. mmbta44t.pdf Size:477K _blue-rocket-elect

A44
A44

MMBTA44T(BR3DG44T) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-89 Plastic Package. 特征 / Features 耐压高。 High voltage. 用途 / Applications 高电压控制电路。 High voltage control circuit. 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 1 2 3 PIN1:Base

1.74. mmbta44n.pdf Size:488K _blue-rocket-elect

A44
A44

MMBTA44N(BR3DA44N) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-223 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-223 Plastic Package. 特征 / Features 耐压高。 High voltage. 用途 / Applications 高电压控制电路。 High voltage control circuit . 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 3 2 1 PIN1:B

1.75. lmbta44lt1g.pdf Size:94K _lrc

A44
A44

LESHAN RADIO COMPANY, LTD. LMBTA44LT1G LMBTA44LT1G S-LMBTA44LT1G NPN EPITAXIAL PLANAR TRANSISTOR We declare that the material of product compliance with RoHS requirements. 3 Description The LMBTA44LT1G is designed for application 1 that requires high voltage. 2 Features • High Breakdown Voltage: VCEO=400(Min.) at IC=1mA SOT– 23 • Complementary to LMBTA94LT1G • S- Prefix

1.76. ha44.pdf Size:111K _shantou-huashan

A44

N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HA44 █ HIGH VOLTAGE TRANSISTOR █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) TO-92 Tstg——Storage Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯ -55~150℃ Tj——Junction Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯150℃ PC——Collector Dissipation⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯625mW

1.77. mpsa44.pdf Size:170K _first_silicon

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A44

SEMICONDUCTOR MPSA44 TECHNICAL DATA MPSA44 TRANSISTOR (NPN) B C FEATURES High Breakdown Voltage DIM MILLIMETERS A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D D 0.55 MAX E 1.00 F 1.27 G 0.85 H 0.45 _ H J 14.00 + 0.50 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) L 2.30 F F M 0.51 MAX Symbol Parameter Value Unit 1 2 3 1. EMITTER VCBO Collector-Base Voltage 500 V

1.78. mmbta44.pdf Size:189K _first_silicon

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A44

SEMICONDUCTOR MMBTA44 TECHNICAL DATA NPN EPITAXIAL PLANAR TRANSISTOR We declare that the material of product compliance with RoHS requirements. 3 Description 2 The MMBTA44 is designed for application that requires high voltage. 1 Features SOT– 23 • High Breakdown Voltage: VCEO=400(Min.) at IC=1mA • Complementary to MMBTA94 COLLECTOR 3 DEVICE MARKING 1 MMBTA44 = 3D B

1.79. cxta44.pdf Size:1127K _kexin

A44
A44

SMD Type Transistors NPN Transistors CXTA44 (KXTA44) 1.70 0.1 ■ Features ● Low Collector-Emitter Saturation Voltage ● High Breakdown Voltage 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - Emitter Voltage VCEO 400 V Emitter - Base Voltage VEBO 6 Collecto

1.80. mmbta44.pdf Size:1104K _kexin

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A44

SMD Type Transistors NPN Transistors MMBTA44 (KMBTA44) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● High Collector-Emitter Voltage 1 2 +0.1 +0.05 ● Complement to MMBTA94 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - E

1.81. mpsa44.pdf Size:654K _shenzhen-tuofeng-semi

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A44

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) MPSA44 TO-92 FEATURES High voltage 1. EMITTER 2. BASE MAXIMUM RATINGS* TA=25℃ unless otherwise noted 3. COLLECTOR Symbol Parameter Value Units 1 2 3 VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V Co

Otros transistores... 2SC431 , 2SC4310 , 2SC4311 , 2SC4312 , 2SC4313 , 2SC4314 , 2SC4315 , 2SC4316 , BC147 , 2SC4318 , 2SC432 , 2SC4320 , 2SC4321 , 2SC4322 , 2SC4323 , 2SC4324 , 2SC4325 .

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