A44 Todos los transistores

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 A44 TRANSISTOR (NPN) 1.EMITTER FEATURES 2.BASE High Breakdown Voltage 3.COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Col... See More ⇒

A44 TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Low Collector-Emitter Saturation Voltage High Breakdown Voltage 2. COLLECTOR 3. EMITTER MARKING A44 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current 300 mA PC Collec... See More ⇒

A44(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V Collector Current -Continuous IC 0.2 A Dimensions in inches and (millimeters) Collector Po... See More ⇒

TO-92 Plastic-Encapsulate Transistors A44 TRANSISTOR (NPN) FEATURES TO-92 FEATURES TO-92 FEATURES TO-92 FEATURES TO-92 High voltage High voltage High voltage High voltage MAXIMUM RATINGS ( MAXIMUM RATINGS ( MAXIMUM RATINGS ( 1. EM T T E R MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. BASE Symbol Parameter Value Units Symbol Parameter Value Units Symbol Pa... See More ⇒

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA44/D High Voltage Transistor NPN Silicon MPSA44 Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol Value Unit CASE 29 04, STYLE 1 Collector Emitter Voltage VCEO 400 Vdc TO 92 (TO 226AA) Collector Base Voltage VCBO 500 Vdc Emitter Base Voltage VEBO 6.0 Vdc ... See More ⇒

PMBTA44 400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 22 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. 1.2 Features Low current (max. 300 mA) High voltage (max. 400 V) AEC-Q101 qua... See More ⇒

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 PZTA44 NPN high-voltage transistor Product data sheet 1999 May 21 Supersedes data of 1998 Nov 26 NXP Semiconductors Product data sheet NPN high-voltage transistor PZTA44 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 400 V). 1 base 2, 4 collector APPLICATIONS 3 emitter Tel... See More ⇒

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA44 NPN high-voltage transistor 1999 Apr 27 Product specification Supersedes data of 1998 Nov 26 Philips Semiconductors Product specification NPN high-voltage transistor MPSA44 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 400 V). 1 collector 2 base APPLICATIONS 3 emitter ... See More ⇒

December 2000 TM QFET QFET QFET QFET FQA44N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 48A, 100V, RDS(on) = 0.039 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 48 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology is espe... See More ⇒

April 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 43.5A, 300V, RDS(on) = 0.069 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 120 nC) planar stripe, DMOS technology. Low Crss ( typical 75 pF) This advanced technology has be... See More ⇒

August 2000 TM QFET QFET QFET QFET FQA44N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 49.8A, 80V, RDS(on) = 0.034 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 38 nC) planar stripe, DMOS technology. Low Crss ( typical 90 pF) This advanced technology has been ... See More ⇒

PMBTA44 400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 22 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. 1.2 Features Low current (max. 300 mA) High voltage (max. 400 V) AEC-Q101 qua... See More ⇒

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

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New Product SiA444DJT Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.017 at VGS = 10 V 12 TrenchFET Power MOSFET 30 5 nC New Thermally Enhanced PowerPAK 0.022 at VGS = 4.5 V 12 SC-70 Package - Small Footprint Area Thin PowerPAK SC-70-6L-Single - ... See More ⇒

New Product SiA445EDJ Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.0165 at VGS = - 4.5 V - 12a Thermally Enhanced PowerPAK 0.0185 at VGS = - 3.7 V - 20 - 12a 23 nC SC-70 Package 0.0300 at VGS = - 2.5 V - Small ... See More ⇒

SiA446DJ www.vishay.com Vishay Siliconix N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET technology optimizes balance VDS (V) RDS(on) ( ) MAX. ID (A) a Qg (TYP.) of RDS(on), Qg, Qsw and Qoss 0.177 at VGS = 10 V 7.7 100 % Rg and UIS tested 150 0.185 at VGS = 7.5 V 7.6 4.3 nC Material categorization 0.250 at VGS = 6 V 4 For definitions of compliance... See More ⇒

SiA445EDJT www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) Qg (TYP.) Thermally enhanced PowerPAK SC-70 package 0.0167 at VGS = -4.5 V -12 a - Small footprint area -20 0.0185 at VGS = -3.7 V -12 a 22 nC - Low on-resistance 0.0310 at VGS = -2.5 V -12 a Ultra-thin 0.6 m... See More ⇒

New Product SiA443DJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Qg (Typ) TrenchFET Power MOSFET 0.045 at VGS = - 4.5 V - 9a New Thermally Enhanced PowerPAK RoHS 0.063 at VGS = - 2.5 V - 20 - 9a 9 nC COMPLIANT SC-70 Package 0.088 at VGS = - 1.8 V - Small Footprint Area - 9a - Low On-Resis... See More ⇒

SiA440DJ Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.026 at VGS = 10 V Material categorization 12 For definitions of compliance please see 0.028 at VGS = 4.5 V 12 40 6.9 nC www.vishay.com/doc?99912 0.029 at VGS = 3.7 V 12 0.035 at VGS = ... See More ⇒

SiA441DJ Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.047 at VGS = - 10 V - 12a Thermally Enhanced PowerPAK - 40 11 nC 0.065 at VGS = - 4.5 V SC-70 Package - 12a - Small Footprint Area - Low On-Resistance PowerPAK SC-70... See More ⇒

New Product SiA447DJ Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-70 Package - Small Footprint Area 0.0135 at VGS = - 4.5 V - 12a - Low On-Resistance 0.0194 at VGS = - 2.5 V - 12a - 12 31 nC 100 % Rg Tested 0.0344 at VGS = - 1.8 V - 12a ... See More ⇒

New Product SiA448DJ Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) New Thermally Enhanced PowerPAK SC-70 Package 0.0150 at VGS = 4.5 V 12 - Small Footprint Area 0.0166 at VGS = 2.5 V 12 - Low On-Resistance 20 13 nC 0.0200 at VGS = 1.8 V 12 100 % Rg Tested 0.0324 ... See More ⇒

CMPTA44 www.centralsemi.com SURFACE MOUNT EXTREMELY HIGH VOLTAGE DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPTA44 type is a surface mount epoxy molded silicon planar epitaxial transistor designed for extremely high voltage applications. MARKING CODE C3Z SOT-23 CASE MAXIMUM RATINGS (TA=25 C) SYMBOL UNITS Collector-Base Voltage VCBO 450 V Collector-Emitte... See More ⇒

CMLTA44 www.centralsemi.com SURFACE MOUNT SILICON EXTREMELY HIGH VOLTAGE DESCRIPTION NPN TRANSISTOR The CENTRAL SEMICONDUCTOR CMLTA44 is an NPN high voltage transistor, epoxy molded in a space saving SOT-563 surface mount package and designed for extremely high voltage applications. MARKING CODE 44C SOT-563 CASE MAXIMUM RATINGS (TA=25 C) SYMBOL UNITS Collector-Base Voltage ... See More ⇒

CZTA44 www.centralsemi.com SURFACE MOUNT EXTREMELY HIGH VOLTAGE DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CZTA44 type is a surface mount epoxy molded silicon planar epitaxial transistor designed for extremely high voltage applications. MARKING FULL PART NUMBER SOT-223 CASE SOT-223 CASE MAXIMUM RATINGS (TA=25 C) SYMBOL UNITS Collector-Base Voltage VCBO 450... See More ⇒

CZTA44HC SURFACE MOUNT www.centralsemi.com HIGH CURRENT DESCRIPTION HIGH VOLTAGE The CENTRAL SEMICONDUCTOR CZTA44HC type is NPN SILICON TRANSISTOR a surface mount epoxy molded silicon planar epitaxial transistor designed for extremely high voltage and high current applications. MARKING FULL PART NUMBER SOT-223 CASE SOT-223 CASE MAXIMUM RATINGS (TA=25 C) SYMBOL UNITS Colle... See More ⇒

PZTA44 Features High Voltage Driver Application Halogen Free. Green Device (Note 1) NPN Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Plastic Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Transistors Compliant. See Ordering Information) Maximum Ratings @ 25 C Unless Otherwise Specified Operating Ju... See More ⇒

PXTA44 Electrical Characteristics @ 25 C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V(BR)CBO IC=100 A, IE=0 Collector-Base Breakdown Voltage 500 V V(BR)CEO IC=1mA, IB=0 Collector-Emitter Breakdown Voltage 400 V V(BR)EBO IE=10 A, IC=0 Emitter-Base Breakdown Voltage 6V ICBO VCB=400V, IE=0 Collector-Base Cutoff Current 100 nA IEBO VEB=4V, IC=0 Emitter-... See More ⇒

MMBTA44 Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Silicon High Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Voltage Transistor Maximum Ratings @ 25 C Unless Otherwise Specified Operating Junction Temperature Range -55 to +1... See More ⇒

MPSA44 Preferred Device High Voltage Transistor NPN Silicon Features http //onsemi.com Pb-Free Packages are Available* COLLECTOR MAXIMUM RATINGS 3 Rating Symbol Value Unit Collector -Emitter Voltage VCEO 400 Vdc 2 BASE Collector -Base Voltage VCBO 500 Vdc Emitter -Base Voltage VEBO 6.0 Vdc 1 Collector Current - Continuous IC 300 mAdc EMITTER Total Device Dissipation @ TA... See More ⇒

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

This product complies with the RoHS Directive (EU 2002/95/EC). DRC5A44E Silicon NPN epitaxial planar type For digital circuits Complementary to DRA5A44E Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-free package Pin Name 1 B... See More ⇒

This product complies with the RoHS Directive (EU 2002/95/EC). DRA9A44W Silicon PNP epitaxial planar type For digital circuits Complementary to DRC9A44W DRA5A44W in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-... See More ⇒

This product complies with the RoHS Directive (EU 2002/95/EC). DRC5A44W Silicon NPN epitaxial planar type For digital circuits Complementary to DRA5A44W Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-free package Pin Name 1 B... See More ⇒

This product complies with the RoHS Directive (EU 2002/95/EC). DRA5A44E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC5A44E Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-free package Pin Name 1 B... See More ⇒

This product complies with the RoHS Directive (EU 2002/95/EC). DRCQA44T Silicon NPN epitaxial planar type For digital circuits Complementary to DRAQA44T DRC3144T in USSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) USSMini3-F1-B Contributes to miniatu... See More ⇒

This product complies with the RoHS Directive (EU 2002/95/EC). DRA5A44W Silicon PNP epitaxial planar type For digital circuits Complementary to DRC5A44W Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-free package Pin Name 1 B... See More ⇒

This product complies with the RoHS Directive (EU 2002/95/EC). DRC9A44W Silicon NPN epitaxial planar type For digital circuits Complementary to DRA9A44W DRC5A44W in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-fr... See More ⇒

This product complies with the RoHS Directive (EU 2002/95/EC). DRC3A44E Silicon NPN epitaxial planar type For digital circuits Complementary to DRA3A44E DRC9A44E in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Halo... See More ⇒

This product complies with the RoHS Directive (EU 2002/95/EC). DRAQA44T Silicon PNP epitaxial planar type For digital circuits Complementary to DRCQA44T DRA3144T in USSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) USSMini3-F1-B Contributes to miniaturi... See More ⇒

This product complies with the RoHS Directive (EU 2002/95/EC). DRA9A44E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC9A44E DRA5A44E in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-fr... See More ⇒

This product complies with the RoHS Directive (EU 2002/95/EC). DRC3A44W Silicon NPN epitaxial planar type For digital circuits Complementary to DRA3A44W DRC9A44W in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge... See More ⇒

This product complies with the RoHS Directive (EU 2002/95/EC). DRCQA44E Silicon NPN epitaxial planar type For digital circuits Complementary to DRAQA44E DRC3A44E in USSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. USSMini3-F1-B Eco-friendly Halogen-... See More ⇒

This product complies with the RoHS Directive (EU 2002/95/EC). DRA3A44E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC3A44E DRA9A44E in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge... See More ⇒

This product complies with the RoHS Directive (EU 2002/95/EC). DRC9A44E Silicon NPN epitaxial planar type For digital circuits Complementary to DRA9A44E DRC5A44E in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-fr... See More ⇒

UNISONIC TECHNOLOGIES CO., LTD MMBTA44/45 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTORS FEATURES 3 *Collector-Emitter voltage V =400V (UTC MMBTA44) CEO V =350V (UTC MMBTA45) CEO *Collector current up to 300mA 1 *Complement to UTC MMBTA94/93 2 *Power Dissipation P (max)=350mW D SOT-23 (JEDEC TO-236) ORDERING INFORMATION Pin Assignment Ordering Number Pa... See More ⇒

UNISONIC TECHNOLOGIES CO., LTD MPSA44H NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES * Collector-Emitter Voltage * V =400V CEO * Collector Current up to 300mA ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MPSA44HL-AB3-R MPSA44HG-AB3-R SOT-89 B C E Tape Reel MPSA44HL-T92-B MPSA44HG-T92-B TO-92 E B C Tape Box ... See More ⇒

UNISONIC TECHNOLOGIES CO., LTD MPSA44/45 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR 1 1 FEATURES TO-252 SOT-89 * Collector-Emitter Voltage * V =400V (UTC MPSA44) CEO * V =350V (UTC MPSA45) CEO * Collector Current up to 300mA 1 1 TO-92NL TO-92 1 TO-126 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 ... See More ⇒

UNISONIC TECHNOLOGIES CO., LTD PZTA44/45 NPN SILICON TRANSISTOR NPN HIGH VOLTAGE TRANSISTOR FEATURES * Collector-emitter voltage V =400V(PZTA44) CEO V =350V(PZTA45) CEO * Collector current up to 300mA APPLICATION * Telephone switching * High voltage switch ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 ... See More ⇒

UTC MPSA 44/ 45 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage VCEO=400V(MPSA44) VCEO=350V(MPSA45) *Collector current up to 300mA *Complement to MPSA94/93 *Collector Dissipation Pc(max)=625mW APPLICATION *Telephone switching TO-92 *High voltage switch 1 EMITTER 2 BASE 3 COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Operating temperature ra... See More ⇒

MPSA44 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High Voltage NPN Transistor G H Emitter J Millimeter REF. A D Min. Max. A 4.40 4.70 B B 4.30 4.70 C 12.70 - Base K D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 E C F G 1.27 TYP. Collector ... See More ⇒

MMBTA44 500V, 0.2A NPN Silicon Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High Voltage Transistor A L 3 3 MARKING Top View C B 1 1 2 3D 2 K E D PACKING INFORMATION Collector H J F G Package MPQ Leader Size Millimeter Millimeter REF. REF. SOT-23 3K 7 in... See More ⇒

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR PZTA44 SOT-223 Formed SMD Package High Voltage Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS Collector Base Voltage VCBO 500 V VCEO Collector Emitter Voltage 400 V VEBO Emitter Base Voltage 6.0 V IC Collector Current (DC) 300 mA ... See More ⇒

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBTA44 PIN CONFIGURATION (NPN) SOT-23 1 = BASE 2 = EMITTER Formed SMD Package 3 = COLLECTOR 3 1 2 Marking Code is =3Z Designed for Extremely High Voltage Applications ABSOLUTE MAXIMUM RATINGS (Ta=25 C) DESCRIPTION SYMBOL VALUE UNITS Collector Base ... See More ⇒

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS MPSA44 MPSA45 TO-92 Plastic Package C B E High Voltage Transistors Complementary of MPSA44 is MPSA94 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL MPSA44 MPSA45 UNITS VCBO Collector Base Voltage 500 400 V VCEO Collector Emitter Voltage 400 350 V VEBO... See More ⇒

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 MPSA44 TRANSISTOR (NPN) 1.EMITTER FEATURES 2.BASE High Breakdown Voltage 3.COLLECTOR Equivalent Circuit FE ... See More ⇒

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-223(8R) Plastic-Encapsulate Transistors SOT-223 PZTA44 TRA NSISTOR (NPN) FEATURES Low current 300mA(max) 1. BASE High voltage VCEO=400V 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V MARKING VCEO Collector-Emitter Voltage 400... See More ⇒

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA44 TRANSISTOR (NPN) SOT 23 FEATURES High Collector-Emitter Voltage Complement to MMBTA94 MARKING 3D 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V V Collector-Emitt... See More ⇒

SEMICONDUCTOR PZTA44 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. A TELEPHONE APPLICATION. H L 2 FEATURES High Breakdown Voltage. K E B Collector Power Dissipation PC=2W(TC=25 ) 1 3 J G F F MAXIMUM RATING (Ta=25 ) DIM MILLIMETERS 1 2 3 _ CHARACTERISTIC SYMBOL RATING UNIT A 6.5 + 0.2 C _ B 3.5 + 0.2 VCBO Collector-Base Voltage 500 V C 1.8... See More ⇒

SEMICONDUCTOR MPSA44/45 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. B C FEATURES High Breakdown Voltage. Collector Power Dissipation PC=625mW. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D MAXIMUM RATING (Ta=25 ) D 0.45 E 1.00 CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 0.85 MPSA44 500 H 0.45 Collector-Base _ VCBO H V J 14.00... See More ⇒

SEMICONDUCTOR MMBTA44 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES High Breakdown Voltage. Collector Power Dissipation PC=350mW. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-BaseVoltage 450 V VCEO Collector-EmitterVoltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current 300 mA PC * Collector Power Dissi... See More ⇒

MMBTA44 TRANSISTOR (NPN) FEATURES High Collector-Emitter Voltage Complement to MMBTA94 MARKING 3D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V SOT 23 V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current-Continuous 200 mA C I Collector Current -Pulsed 300 ... See More ⇒

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GMA44 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit VCEO 400 V Collector-Emitter Voltage - Collect... See More ⇒

PZTA44 SOT-223 Transistor(NPN) 1. BASE SOT-223 2. COLLECTOR 1 3. EMITTER Features Low current 300mA(max) High voltage VCEO=400V MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 6 V IC Collector Cur... See More ⇒

MMBTA44 Transistor(NPN) SOT-23 Features Power dissipation PCM = 0.35W (Tamb=25 ) ICM = 0.2A Collector current Collector-base voltage V(BR)CBO = 400V Operating and storage junction temperature range T J, Tstg -55 to +150 Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test co... See More ⇒

MPSA44 High-Voltage NPN Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 400 Vdc Collector-Base Voltage VCBO 400 Vdc Emitter-Base VOltage VEBO 5.0 Vdc Collector Current IC 200 mAdc PD 0.625 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C Storage, Temper... See More ⇒

PZTA44 NPN Silicon Planar Epitaxial Transistor COLLECTOR 2, 4 4 1. BASE 2.COLLECTOR 3.EMITTER BASE 4.COLLECTOR 1 1 2 3 3 SOT-223 EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Symbol Rating Value Unit V Collector-Emitter Voltage CEO V 400 VCBO Collector-Base Voltage 500 V VEBO Emitter-Base Voltage 6 V IC(DC) Collector Current (DC) 300 mA PD Total Device Disspation TA=2... See More ⇒

WTMA44 NPN Epitaxial Planar Transistors SOT-89 P b Lead(Pb)-Free 1 *Low Collector-Emitter Saturation Voltage 2 1. BASE 3 2. COLLECTOR *High Breakdown Voltage 3. EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage 500 VCEO V Collector-Emitter Voltage 400 VEBO V Emitter-Base Voltage 6 Collector Current IC 300 mA Collector Pow... See More ⇒

MMBTA44 COLLECTOR 3 High-Voltage NPN Transistor SOT-23 3 Surface Mount 1 BASE 1 2 2 EMITTER Maximum Ratings Rating Symbol Value Unit C ollector-E mitter V oltage V 400 Vdc CEO C ollector-B ase V oltage VCBO 450 Vdc E mitter-B as e V Oltage VEBO 6.0 Vdc C ollector C urrent-C ontinuous IC 300 mAdc Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipat... See More ⇒

Spec. No. HE6358 HI-SINCERITY Issued Date 1993.01.15 Revised Date 2004.07.21 MICROELECTRONICS CORP. Page No. 1/4 HMPSA44 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMPSA44 is designed for application that requires high voltage. Features TO-92 High Breakdown Voltage 400(Min) at IC=1mA High Current Gain IC=300mA at 25 C Complementary to HMPSA94 Absolute ... See More ⇒

Spec. No. HN200208 HI-SINCERITY Issued Date 1993.06.23 Revised Date 2004.09.08 MICROELECTRONICS CORP. Page No. 1/4 HMBTA44 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBTA44 is designed for application requires high voltage. Features SOT-23 High voltage VCEO=400V(min) at IC=1mA High current IC=300mA at 25 C Complementary with HMBTA94 Absolute Maximum R... See More ⇒

Analog Power AMA440N N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 15 @ VGS = 10V 12 Low thermal impedance 40 21 @ VGS = 4.5V 10 Fast switching speed DFN2X2 Typical Applications DC/DC Conversion Power Routing Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHER... See More ⇒

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) MPSA44 TO-92 FEATURES High voltage 1. EMITTER 2. BASE MAXIMUM RATINGS* TA=25 unless otherwise noted 3. COLLECTOR Symbol Parameter Value Units 1 2 3 VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V Co... See More ⇒

Spec. No. C211M3 Issued Date 2013.05.09 CYStech Electronics Corp. Revised Date 2013.08.05 Page No. 1/6 High Voltage NPN Epitaxial Planar Transistor BTNA44M3 Features High breakdown voltage. (BV = 400V) CEO Low saturation voltage, typically V C B CE(sat) = 60mV at I /I =10mA/1mA. Complementary to BTPA94M3 Symbol Outline BTNA44M3 SOT-89 B Base ... See More ⇒

Spec. No. C211A3 Issued Date 2003.03.026 CYStech Electronics Corp. Revised Date 2013.11.20 Page No. 1/6 High Voltage NPN Epitaxial Planar Transistor BTNA44A3 Features High breakdown voltage. (BV =400V) CEO Low saturation voltage, typically V (sat) =60mV at I /I 10mA/1mA. CE C B= Complementary to BTPA94A3 Pb-free lead plating and halogen-free packag... See More ⇒

Spec. No. C305A3 Issued Date 2007.10.16 CYStech Electronics Corp. Revised Date 2012.04.12 Page No. 1/6 General Purpose PNP Epitaxial Planar Transistor BTA4403A3 Description The BTA4403A3 is designed for using in driver stage of AF amplifier and general purpose amplification. Large IC , IC Max .= -0.6A Low VCE(sat), typically -0.2V at IC/IB = -300mA / -30mA... See More ⇒

Spec. No. C210N3-H Issued Date 2003.06.12 CYStech Electronics Corp. Revised Date 2010.07.14 Page No. 1/6 High Voltage NPN Epitaxial Planar Transistor BVCEO 400V IC 300mA BTNA44N3 RCESAT(typ.) 10 Features High breakdown voltage. (BV =400V) CEO Low saturation voltage, typically V C B CE(sat) = 0.1V at I /I =10mA/1mA. Complementary to BTPA94N3 ... See More ⇒

STA4470 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 12 @ VGS=10V Suface Mount Package. 40V 11A 16 @ VGS=4.5V PDIP-8 1 (TA=25 C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Units Limit VDS ... See More ⇒

MPSA44 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High voltage. / Applications High voltage control circuit. / Equivalent Circuit / Pinning 1 2 3 PIN1 Collector PIN ... See More ⇒

MMBTA44N(BR3DA44N) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-223 NPN Silicon NPN transistor in a SOT-223 Plastic Package. / Features High voltage. / Applications High voltage control circuit . / Equivalent Circuit / Pinning 3 2 1 PIN1 B... See More ⇒

MMBTA44T(BR3DG44T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features High voltage. / Applications High voltage control circuit. / Equivalent Circuit / Pinning 1 2 3 PIN1 Base... See More ⇒

MMBTA44 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features , High voltage, Low saturation voltage. / Applications High voltage control circuit. / Equivalent Circuit ... See More ⇒

MPSA44 NPN Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. As complementary type the PNP transistor MPSA94 is recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit... See More ⇒

LESHAN RADIO COMPANY, LTD. LMBTA44LT1G LMBTA44LT1G S-LMBTA44LT1G NPN EPITAXIAL PLANAR TRANSISTOR We declare that the material of product compliance with RoHS requirements. 3 Description The LMBTA44LT1G is designed for application 1 that requires high voltage. 2 Features High Breakdown Voltage VCEO=400(Min.) at IC=1mA SOT 23 Complementary to LMBTA94LT1G S- Prefix... See More ⇒

N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HA44 HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25 TO-92 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation 625mW ... See More ⇒

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SEMICONDUCTOR MPSA44 TECHNICAL DATA MPSA44 TRANSISTOR (NPN) B C FEATURES High Breakdown Voltage DIM MILLIMETERS A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D D 0.55 MAX E 1.00 F 1.27 G 0.85 H 0.45 _ H J 14.00 + 0.50 MAXIMUM RATINGS (Ta=25 unless otherwise noted) L 2.30 F F M 0.51 MAX Symbol Parameter Value Unit 1 2 3 1. EMITTER VCBO Collector-Base Voltage 500 V ... See More ⇒

SEMICONDUCTOR MMBTA44 TECHNICAL DATA NPN EPITAXIAL PLANAR TRANSISTOR We declare that the material of product compliance with RoHS requirements. 3 Description 2 The MMBTA44 is designed for application that requires high voltage. 1 Features SOT 23 High Breakdown Voltage VCEO=400(Min.) at IC=1mA Complementary to MMBTA94 COLLECTOR 3 DEVICE MARKING 1 MMBTA44 = 3D B... See More ⇒

SMD Type Transistors NPN Transistors CXTA44 (KXTA44) 1.70 0.1 Features Low Collector-Emitter Saturation Voltage High Breakdown Voltage 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - Emitter Voltage VCEO 400 V Emitter - Base Voltage VEBO 6 Collecto... See More ⇒

SMD Type Transistors NPN Transistors MMBTA44 (KMBTA44) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High Collector-Emitter Voltage 1 2 +0.1 +0.05 Complement to MMBTA94 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - E... See More ⇒

CHENMKO ENTERPRISE CO.,LTD CHTA44ZGP SURFACE MOUNT NPN SILICON Transistor VOLTAGE 400 Volts CURRENT 0.3 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. ( SC-73/SOT-223 ) 1.65+0.15 6.50+0.20 * Suitable for high packing density. 0.90+0.05 2.0+0.3 3.00+0.10 * High saturation curre... See More ⇒

DC COMPONENTS CO., LTD. DMBTA44 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for applications requiring high breakdown voltage. SOT-23 .020(0.50) Pinning .012(0.30) 1 = Base 2 = Emitter 3 .063(1.60) .108(0.65) 3 = Collector .055(1.40) .089(0.25) 1 2 Absolute Maximum Ratings(TA=25oC) .045(1.15) .034(0.85) Char... See More ⇒

MPSA44-BK MPSA44-BK High voltage Si-epitaxial planar transistors NPN NPN Hochspannungs-Si-Epitaxial Planar-Transistoren Version 2011-07-07 Power dissipation 625 mW 0.1 Verlustleistung 4.6 Plastic case TO-92 Kunststoffgeh use (10D3) Weight approx. 0.18 g Gewicht ca. E B C Plastic material has UL classification 94V-0 Geh usematerial UL94V-0 klassifiziert Special packaging bul... See More ⇒

MMBTA44 General Purpose Transistors NPN Silicon Product Summary VCEO 400V I c 200mA PC 350mW FEATURE High Collector-Emitter Voltage Complement to MMBTA94 SOT-23 MAXIMUM RATINGS (T =25 unless otherwise noted) A Parameter Symbol Limit Unit Collector-Base Voltage 400 V VCBO Collector-Emitter Voltage 400 V VCEO Emitter-Base Voltage VEBO V 6 A... See More ⇒

Silicon FS Trench IGBT CRG05T60A44S-G General Description Feature Parameters VCES 650 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) IC 5 A technology, offering superior conduction and switching performances. Ptot TC=25 55 W RoHS Compliant. VCE(sat) 1.50 V Package TO-252 Features FS Trench Technology, Positive temperature... See More ⇒

SOT-23 Plastic-Encapsulate Transistors Formosa MS MMBTA44 TRANSISTOR (NPN) FEATURES High Collector-Emitter Voltage SOT 23 Complement to MMBTA94 MARKING 3D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V 1. BASE 2. EMITTER V Collector-Emitter Voltage 400 V CEO 3. COLLECTOR V Emitter-Base Voltage... See More ⇒

MMBTA4 4 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) Features SOT- 23 High Collector-Emitter Voltage Complement to MMBTA94 Marking 3D Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V V Collector-Emitter Voltage 400 V CEO C V Emitter-Base Voltage 6 V EBO I Collector Current C 200 mA P Collector Power Dissipation 350 mW ... See More ⇒

www.msksemi.com MMBTA44-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES High Collector-Emitter Voltage Complement to MMBTA94-MS 1. BASE MARKING 3D 2. EMITTER SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 400 V CBO V Collector-Emitter Voltage 400 V CEO V... See More ⇒

MMBTA44 NPN Transistor Features SOT-23 (TO-236) For High Voltage Switching and Amplifier Applications. 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 500 V CBO Collector Emitter Voltage V 400 V CEO Emitter Base Voltage V 6 V EBO Collector Cur... See More ⇒

MMBTA44 SOT-23 Plastic-Encapsulate Transistors MMBTA44 TRANSISTOR (NPN) SOT 23 FEATURES High Collector-Emitter Voltage Complement to MMBTA94 1. BASE MARKING 3D 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Co... See More ⇒

MMBTA44 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBTA94 ; Complementary to MMBTA94 350mW; Power Dissipation of 350mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Package... See More ⇒

SiA444DJT www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.030 at VGS = 10 V 6 Low On-Resistance 30 4.2 nC 0.040 at VGS = 4.5 V 5 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS PowerPAK SC-70-6L... See More ⇒

VBZA4430 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.005at VGS = 10 V 18 30 6.8 nC Optimized for High-Side Synchronous 0.006 at VGS = 4.5 V 16 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch S... See More ⇒

VBZA4435 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6 D ... See More ⇒

VBZA4425 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.023at VGS = - 10 V - 7 100 % Rg Tested RoHS - 30 28 nC COMPLIANT 100 % UIS Tested 0.030 at VGS = - 4.5 V -5 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G S 3 6 D... See More ⇒

VBZA4410 www.VBsemi.com N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = 10 V 11 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 9 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO... See More ⇒

VBZA4409 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011at VGS = - 10 V - 11 100 % Rg Tested RoHS - 30 15 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 9 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G S 3 6... See More ⇒

VBZA4420 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.013at VGS = - 10 V - 10 100 % Rg Tested RoHS - 30 18 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 9 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G S 3 6... See More ⇒

VBZA4412 www.VBsemi.com N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.010 at VGS = 10 V 13 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 9 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO... See More ⇒

VBZA4407 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.018 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop PCs... See More ⇒

RoHS RoHS COMPLIANT COMPLIANT MMBTA44 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface mount package ideally Suited for Automatic Insertion Mechanical Data Package SOT-23 Molding compound meets UL 94 V-0 flammabilit... See More ⇒

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MMBTA44 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to MMBTA94 High breakdown voltage Low Collector-emitter saturation voltage Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A... See More ⇒

HMBTA44 NPN-TRANSISTOR NPN, 200mA, 400V NPN HMBTA44 NPN High Voltage Transistor SMD HMBTA44LT1 NPN, BEC High breakdown voltage General Purpose Transistors Low collector-emitter saturation voltage Complementary to HMBTA94 A44 Transistor Polarity NPN MMBTA... See More ⇒

isc N-Channel MOSFET Transistor FDA44N50 FEATURES With TO-3PN packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS V Gate... See More ⇒