JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 A44 TRANSISTOR (NPN) 1.EMITTER FEATURES 2.BASE High Breakdown Voltage 3.COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Col

A44 TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Low Collector-Emitter Saturation Voltage High Breakdown Voltage 2. COLLECTOR 3. EMITTER MARKING: A44 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current 300 mA PC Collec

A44(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V Collector Current -Continuous IC 0.2 ADimensions in inches and (millimeters)Collector Po

TO-92 Plastic-Encapsulate TransistorsA44 TRANSISTOR (NPN)FEATURES TO-92FEATURES TO-92FEATURES TO-92FEATURES TO-92 High voltage High voltage High voltage High voltageMAXIMUM RATINGS (MAXIMUM RATINGS (MAXIMUM RATINGS ( 1. EM T T E RMAXIMUM RATINGS (TA=25 unless otherwise noted)2. BASESymbol Parameter Value UnitsSymbol Parameter Value UnitsSymbol Pa

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSA44/DHigh Voltage TransistorNPN SiliconMPSA44Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER1MAXIMUM RATINGS23Rating Symbol Value UnitCASE 2904, STYLE 1CollectorEmitter Voltage VCEO 400 VdcTO92 (TO226AA)CollectorBase Voltage VCBO 500 VdcEmitterBase Voltage VEBO 6.0 Vdc

PMBTA44400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistorRev. 01 22 February 2008 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.1.2 Features Low current (max. 300 mA) High voltage (max. 400 V) AEC-Q101 qua

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D087PZTA44NPN high-voltage transistorProduct data sheet 1999 May 21Supersedes data of 1998 Nov 26 NXP Semiconductors Product data sheetNPN high-voltage transistor PZTA44FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 400 V).1 base2, 4 collectorAPPLICATIONS3 emitter Tel

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D087PZTA44NPN high-voltage transistor1999 May 21Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN high-voltage transistor PZTA44FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 400 V).1 base2, 4 collectorAPPLICATIONS3 emitter

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186MPSA44NPN high-voltage transistor1999 Apr 27Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN high-voltage transistor MPSA44FEATURES PINNING Low current (max. 300 mA)PIN DESCRIPTION High voltage (max. 400 V).1 collector2 baseAPPLICATIONS3 emitter

December 2000TMQFETQFETQFETQFETFQA44N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 48A, 100V, RDS(on) = 0.039 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 48 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology is espe

April 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 43.5A, 300V, RDS(on) = 0.069 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 120 nC)planar stripe, DMOS technology. Low Crss ( typical 75 pF)This advanced technology has be

August 2000TMQFETQFETQFETQFETFQA44N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 49.8A, 80V, RDS(on) = 0.034 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar stripe, DMOS technology. Low Crss ( typical 90 pF)This advanced technology has been

PMBTA44400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistorRev. 01 22 February 2008 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.1.2 Features Low current (max. 300 mA) High voltage (max. 400 V) AEC-Q101 qua

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

New ProductSiA449DJVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-70 Package- Small Footprint Area0.020 at VGS = - 10 V - 12a- Low On-Resistance- 30 0.024 at VGS = - 4.5 V - 12a 23.1 nC 100 % Rg Tested0.038 at VGS = - 2.5 V - 12a

New ProductSiA444DJTVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.017 at VGS = 10 V 12 TrenchFET Power MOSFET30 5 nC New Thermally Enhanced PowerPAK0.022 at VGS = 4.5 V 12SC-70 Package- Small Footprint AreaThin PowerPAK SC-70-6L-Single-

New ProductSiA445EDJVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.0165 at VGS = - 4.5 V - 12a Thermally Enhanced PowerPAK0.0185 at VGS = - 3.7 V - 20- 12a 23 nCSC-70 Package0.0300 at VGS = - 2.5 V - Small

SiA446DJwww.vishay.comVishay SiliconixN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY ThunderFET technology optimizes balanceVDS (V) RDS(on) () MAX. ID (A) a Qg (TYP.)of RDS(on), Qg, Qsw and Qoss0.177 at VGS = 10 V 7.7 100 % Rg and UIS tested150 0.185 at VGS = 7.5 V 7.6 4.3 nC Material categorization:0.250 at VGS = 6 V 4For definitions of compliance

SiA445EDJTwww.vishay.comVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Thermally enhanced PowerPAK SC-70 package0.0167 at VGS = -4.5 V -12 a- Small footprint area-20 0.0185 at VGS = -3.7 V -12 a 22 nC- Low on-resistance0.0310 at VGS = -2.5 V -12 a Ultra-thin 0.6 m

New ProductSiA443DJVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ) TrenchFET Power MOSFET0.045 at VGS = - 4.5 V - 9a New Thermally Enhanced PowerPAK RoHS0.063 at VGS = - 2.5 V - 20- 9a 9 nC COMPLIANTSC-70 Package0.088 at VGS = - 1.8 V - Small Footprint Area- 9a- Low On-Resis

SiA440DJVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.)ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.026 at VGS = 10 V Material categorization:12For definitions of compliance please see0.028 at VGS = 4.5 V 1240 6.9 nCwww.vishay.com/doc?999120.029 at VGS = 3.7 V 120.035 at VGS =

SiA441DJVishay SiliconixP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.047 at VGS = - 10 V - 12a Thermally Enhanced PowerPAK- 40 11 nC0.065 at VGS = - 4.5 V SC-70 Package- 12a- Small Footprint Area- Low On-ResistancePowerPAK SC-70

New ProductSiA447DJVishay SiliconixP-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-70 Package- Small Footprint Area0.0135 at VGS = - 4.5 V - 12a- Low On-Resistance0.0194 at VGS = - 2.5 V - 12a- 12 31 nC 100 % Rg Tested0.0344 at VGS = - 1.8 V - 12a

New ProductSiA448DJVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) New Thermally Enhanced PowerPAKSC-70 Package0.0150 at VGS = 4.5 V 12- Small Footprint Area0.0166 at VGS = 2.5 V 12- Low On-Resistance20 13 nC0.0200 at VGS = 1.8 V 12 100 % Rg Tested0.0324

CMPTA44www.centralsemi.comSURFACE MOUNTEXTREMELY HIGH VOLTAGE DESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CMPTA44 type is a surface mount epoxy molded silicon planar epitaxial transistor designed for extremely high voltage applications.MARKING CODE: C3ZSOT-23 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL UNITSCollector-Base Voltage VCBO 450 VCollector-Emitte

CMLTA44www.centralsemi.comSURFACE MOUNT SILICON EXTREMELY HIGH VOLTAGEDESCRIPTION:NPN TRANSISTORThe CENTRAL SEMICONDUCTOR CMLTA44 is an NPN high voltage transistor, epoxy molded in a space saving SOT-563 surface mount package and designed for extremely high voltage applications.MARKING CODE: 44CSOT-563 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL UNITSCollector-Base Voltage

CZTA44www.centralsemi.comSURFACE MOUNTEXTREMELY HIGH VOLTAGEDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CZTA44 type is a surface mount epoxy molded silicon planar epitaxial transistor designed for extremely high voltage applications.MARKING: FULL PART NUMBERSOT-223 CASESOT-223 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL UNITSCollector-Base Voltage VCBO 450

CZTA44HCSURFACE MOUNTwww.centralsemi.comHIGH CURRENTDESCRIPTION:HIGH VOLTAGE The CENTRAL SEMICONDUCTOR CZTA44HC type is NPN SILICON TRANSISTORa surface mount epoxy molded silicon planar epitaxial transistor designed for extremely high voltage and high current applications.MARKING: FULL PART NUMBERSOT-223 CASESOT-223 CASEMAXIMUM RATINGS: (TA=25C) SYMBOL UNITSColle

PZTA44Features High Voltage Driver Application Halogen Free. Green Device (Note 1)NPN Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingPlastic Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS TransistorsCompliant. See Ordering Information) Maximum Ratings @ 25C Unless Otherwise Specified Operating Ju

PXTA44Electrical Characteristics @ 25C Unless Otherwise SpecifiedParameter Symbol Min Typ Max Units ConditionsV(BR)CBO IC=100A, IE=0Collector-Base Breakdown Voltage 500 VV(BR)CEO IC=1mA, IB=0Collector-Emitter Breakdown Voltage 400 VV(BR)EBO IE=10A, IC=0Emitter-Base Breakdown Voltage 6VICBO VCB=400V, IE=0Collector-Base Cutoff Current 100 nAIEBO VEB=4V, IC=0Emitter-

MMBTA44Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingNPN Silicon High Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)Voltage TransistorMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Temperature Range: -55 to +1

MPSA44Preferred Device High Voltage TransistorNPN SiliconFeatureshttp://onsemi.com Pb-Free Packages are Available*COLLECTORMAXIMUM RATINGS3Rating Symbol Value UnitCollector -Emitter Voltage VCEO 400 Vdc2BASECollector -Base Voltage VCBO 500 VdcEmitter -Base Voltage VEBO 6.0 Vdc1Collector Current - Continuous IC 300 mAdcEMITTERTotal Device Dissipation @ TA

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

This product complies with the RoHS Directive (EU 2002/95/EC).DRC5A44ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA5A44E Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-free package Pin Name 1: B

This product complies with the RoHS Directive (EU 2002/95/EC).DRA9A44WSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC9A44WDRA5A44W in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-

This product complies with the RoHS Directive (EU 2002/95/EC).DRC5A44WSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA5A44W Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-free package Pin Name 1: B

This product complies with the RoHS Directive (EU 2002/95/EC).DRA5A44ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5A44E Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-free package Pin Name 1: B

This product complies with the RoHS Directive (EU 2002/95/EC).DRCQA44TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRAQA44TDRC3144T in USSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) USSMini3-F1-B Contributes to miniatu

This product complies with the RoHS Directive (EU 2002/95/EC).DRA5A44WSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5A44W Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-free package Pin Name 1: B

This product complies with the RoHS Directive (EU 2002/95/EC).DRC9A44WSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA9A44WDRC5A44W in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-fr

This product complies with the RoHS Directive (EU 2002/95/EC).DRC3A44ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3A44EDRC9A44E in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Halo

This product complies with the RoHS Directive (EU 2002/95/EC).DRAQA44TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCQA44TDRA3144T in USSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) USSMini3-F1-B Contributes to miniaturi

This product complies with the RoHS Directive (EU 2002/95/EC).DRA9A44ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC9A44EDRA5A44E in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-fr

This product complies with the RoHS Directive (EU 2002/95/EC).DRC3A44WSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3A44WDRC9A44W in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge

This product complies with the RoHS Directive (EU 2002/95/EC).DRCQA44ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRAQA44EDRC3A44E in USSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. USSMini3-F1-B Eco-friendly Halogen-

This product complies with the RoHS Directive (EU 2002/95/EC).DRA3A44ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC3A44EDRA9A44E in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge

This product complies with the RoHS Directive (EU 2002/95/EC).DRC9A44ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA9A44EDRC5A44E in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-fr

UNISONIC TECHNOLOGIES CO., LTD MMBTA44/45 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTORS FEATURES 3*Collector-Emitter voltage: V =400V (UTC MMBTA44) CEO V =350V (UTC MMBTA45) CEO*Collector current up to 300mA 1*Complement to UTC MMBTA94/93 2*Power Dissipation: P (max)=350mW DSOT-23(JEDEC TO-236) ORDERING INFORMATION Pin Assignment Ordering Number Pa

UNISONIC TECHNOLOGIES CO., LTD MPSA44H NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES * Collector-Emitter Voltage:* V =400V CEO* Collector Current up to 300mA ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MPSA44HL-AB3-R MPSA44HG-AB3-R SOT-89 B C E Tape ReelMPSA44HL-T92-B MPSA44HG-T92-B TO-92 E B C Tape Box

UNISONIC TECHNOLOGIES CO., LTD MPSA44/45 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR 11 FEATURES TO-252SOT-89* Collector-Emitter Voltage: * V =400V (UTC MPSA44) CEO* V =350V (UTC MPSA45) CEO* Collector Current up to 300mA 11TO-92NLTO-921TO-126 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3

UNISONIC TECHNOLOGIES CO., LTD PZTA44/45 NPN SILICON TRANSISTOR NPN HIGH VOLTAGE TRANSISTOR FEATURES * Collector-emitter voltage: V =400V(PZTA44) CEO V =350V(PZTA45) CEO* Collector current up to 300mA APPLICATION * Telephone switching * High voltage switch ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3

UTC MPSA 44/ 45 NPN EPITAXIAL SILICONTRANSISTORHIGH VOLTAGE TRANSISTORFEATURES*Collector-Emitter voltage:VCEO=400V(MPSA44)VCEO=350V(MPSA45)*Collector current up to 300mA*Complement to MPSA94/93*Collector Dissipation:Pc(max)=625mW APPLICATION*Telephone switchingTO-92*High voltage switch1:EMITTER 2:BASE 3:COLLECTORABSOLUTE MAXIMUM RATINGS ( Operating temperature ra

MPSA44 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High Voltage NPN Transistor G HEmitterJMillimeterREF. A DMin. Max.A 4.40 4.70BB 4.30 4.70C 12.70 -Base KD 3.30 3.81E 0.36 0.56F 0.36 0.51 E C F G 1.27 TYP.Collector

MMBTA44 500V, 0.2A NPN Silicon Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23FEATURES High Voltage Transistor AL33MARKING Top View C B11 23D 2K EDPACKING INFORMATION Collector H JF GPackage MPQ Leader Size Millimeter MillimeterREF. REF.SOT-23 3K 7 in

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR PZTA44SOT-223Formed SMD PackageHigh Voltage TransistorABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITSCollector Base Voltage VCBO 500 VVCEOCollector Emitter Voltage 400 VVEBOEmitter Base Voltage 6.0 VICCollector Current (DC) 300 mA

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBTA44PIN CONFIGURATION (NPN)SOT-231 = BASE2 = EMITTERFormed SMD Package3 = COLLECTOR312Marking Code is =3ZDesigned for Extremely High Voltage ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL VALUE UNITSCollector Base

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS MPSA44MPSA45TO-92Plastic PackageCBEHigh Voltage TransistorsComplementary of MPSA44 is MPSA94ABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL MPSA44 MPSA45 UNITSVCBOCollector Base Voltage 500 400 VVCEOCollector Emitter Voltage 400 350 VVEBO

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate TransistorsTO 92 MPSA44 TRANSISTOR (NPN)1.EMITTERFEATURES 2.BASE High Breakdown Voltage3.COLLECTOR Equivalent Circuit FE

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-223(8R) Plastic-Encapsulate TransistorsSOT-223 PZTA44 TRA NSISTOR (NPN)FEATURES Low current : 300mA(max)1. BASE High voltage: VCEO=400V2. COLLECTOR3. EMITTERMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 400 V MARKING: VCEO Collector-Emitter Voltage 400

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA44 TRANSISTOR (NPN) SOT23 FEATURES High Collector-Emitter Voltage Complement to MMBTA94 MARKING: 3D 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V V Collector-Emitt

SEMICONDUCTOR PZTA44TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION. ATELEPHONE APPLICATION.HL2FEATURESHigh Breakdown Voltage.KE BCollector Power Dissipation : PC=2W(TC=25 )1 3JGF FMAXIMUM RATING (Ta=25 )DIM MILLIMETERS1 2 3_CHARACTERISTIC SYMBOL RATING UNITA 6.5 + 0.2C_B 3.5 + 0.2VCBOCollector-Base Voltage 500 V C 1.8

SEMICONDUCTOR MPSA44/45TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION.B CFEATURES High Breakdown Voltage.Collector Power Dissipation : PC=625mW.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDMAXIMUM RATING (Ta=25 )D 0.45E 1.00CHARACTERISTIC SYMBOL RATING UNITF 1.27G 0.85MPSA44 500H 0.45Collector-Base_VCBO HV J 14.00

SEMICONDUCTOR MMBTA44TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION.FEATURES High Breakdown Voltage.Collector Power Dissipation : PC=350mW.MAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-BaseVoltage 450 VVCEOCollector-EmitterVoltage 400 VVEBOEmitter-Base Voltage 6 VICCollector Current 300 mAPC *Collector Power Dissi

MMBTA44TRANSISTOR (NPN) FEATURES High Collector-Emitter Voltage Complement to MMBTA94 MARKING: 3D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V SOT23 V Collector-Emitter Voltage 400 V CEOV Emitter-Base Voltage 6 V EBOI Collector Current-Continuous 200 mAC I Collector Current -Pulsed 300

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GMA44MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit VCEO 400 VCollector-Emitter Voltage -Collect

PZTA44 SOT-223 Transistor(NPN)1. BASE SOT-2232. COLLECTOR 1 3. EMITTER Features Low current : 300mA(max) High voltage: VCEO=400V MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 500 VVCEO Collector-Emitter Voltage 400 VDimensions in inches and (millimeters)VEBO Emitter-Base Voltage 6 V IC Collector Cur

MMBTA44Transistor(NPN)SOT-23Features Power dissipation: PCM = 0.35W (Tamb=25) ICM = 0.2A Collector current: Collector-base voltage: V(BR)CBO = 400V Operating and storage junction temperature range T J, Tstg: -55 to +150 Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test co

MPSA44High-Voltage NPN TransistorsTO-921. EMITTER122. BASE33. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO 400 VdcCollector-Base Voltage VCBO 400VdcEmitter-Base VOltage VEBO5.0 VdcCollector Current IC200 mAdcPD 0.625Total Device Dissipation T =25 C WAJunction Temperature T 150j CStorage, Temper

PZTA44NPN Silicon Planar Epitaxial TransistorCOLLECTOR2, 441. BASE2.COLLECTOR 3.EMITTERBASE4.COLLECTOR 11233SOT-223EMITTERABSOLUTE MAXIMUM RATINGS (TA=25 C)SymbolRating Value UnitVCollector-Emitter Voltage CEO V400VCBOCollector-Base Voltage 500 VVEBOEmitter-Base Voltage 6 VIC(DC)Collector Current (DC) 300 mAPDTotal Device Disspation TA=2

WTMA44NPN Epitaxial Planar TransistorsSOT-89P b Lead(Pb)-Free1*Low Collector-Emitter Saturation Voltage 21. BASE32. COLLECTOR*High Breakdown Voltage3. EMITTERABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Limits UnitVCBO VCollector-Base Voltage500VCEOVCollector-Emitter Voltage 400VEBOVEmitter-Base Voltage 6Collector Current IC300 mACollector Pow

MMBTA44COLLECTOR3High-Voltage NPN Transistor SOT-233Surface Mount1BASE1 22EMITTERMaximum RatingsRating Symbol Value UnitC ollector-E mitter V oltage V 400 VdcCEOC ollector-B ase V oltage VCBO 450 VdcE mitter-B as e V Oltage VEBO 6.0 VdcC ollector C urrent-C ontinuous IC300 mAdcThermal CharacteristicsCharacteristics Symbol Max UnitTotal Device Dissipat

Spec. No. : HE6358HI-SINCERITYIssued Date : 1993.01.15Revised Date : 2004.07.21MICROELECTRONICS CORP.Page No. : 1/4HMPSA44NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HMPSA44 is designed for application that requires high voltage.FeaturesTO-92 High Breakdown Voltage: 400(Min) at IC=1mA High Current Gain: IC=300mA at 25C Complementary to HMPSA94Absolute

Spec. No. : HN200208HI-SINCERITYIssued Date : 1993.06.23Revised Date : 2004.09.08MICROELECTRONICS CORP.Page No. : 1/4HMBTA44NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HMBTA44 is designed for application requires high voltage.FeaturesSOT-23 High voltage: VCEO=400V(min) at IC=1mA High current: IC=300mA at 25C Complementary with HMBTA94Absolute Maximum R

Analog Power AMA440NN-Channel 40-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)15 @ VGS = 10V12 Low thermal impedance 4021 @ VGS = 4.5V10 Fast switching speed DFN2X2 Typical Applications: DC/DC Conversion Power Routing Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHER

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) MPSA44 TO-92 FEATURES High voltage 1. EMITTER 2. BASE MAXIMUM RATINGS* TA=25 unless otherwise noted 3. COLLECTOR Symbol Parameter Value Units 1 2 3 VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V Co

Spec. No. : C211M3 Issued Date : 2013.05.09 CYStech Electronics Corp.Revised Date : 2013.08.05 Page No. : 1/6 High Voltage NPN Epitaxial Planar Transistor BTNA44M3 Features High breakdown voltage. (BV = 400V) CEO Low saturation voltage, typically V C BCE(sat) = 60mV at I /I =10mA/1mA. Complementary to BTPA94M3 Symbol Outline BTNA44M3 SOT-89 BBase

Spec. No. : C211A3 Issued Date : 2003.03.026 CYStech Electronics Corp.Revised Date :2013.11.20 Page No. : 1/6 High Voltage NPN Epitaxial Planar Transistor BTNA44A3 Features High breakdown voltage. (BV =400V) CEO Low saturation voltage, typically V (sat) =60mV at I /I 10mA/1mA. CE C B= Complementary to BTPA94A3 Pb-free lead plating and halogen-free packag

Spec. No. : C305A3 Issued Date : 2007.10.16 CYStech Electronics Corp.Revised Date : 2012.04.12 Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistor BTA4403A3Description The BTA4403A3 is designed for using in driver stage of AF amplifier and general purpose amplification. Large IC , IC Max .= -0.6A Low VCE(sat), typically -0.2V at IC/IB = -300mA / -30mA

Spec. No. : C210N3-H Issued Date : 2003.06.12 CYStech Electronics Corp.Revised Date : 2010.07.14 Page No. : 1/6 High Voltage NPN Epitaxial Planar Transistor BVCEO 400VIC 300mABTNA44N3 RCESAT(typ.) 10 Features High breakdown voltage. (BV =400V) CEO Low saturation voltage, typically V C B CE(sat) = 0.1V at I /I =10mA/1mA. Complementary to BTPA94N3

STA4470aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.12 @ VGS=10VSuface Mount Package.40V 11A16 @ VGS=4.5VPDIP-81(TA=25C unless otherwise noted)ABSOLUTE MAXIMUM RATINGSSymbol Parameter UnitsLimitVDS

MPSA44 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High voltage. / Applications High voltage control circuit. / Equivalent Circuit / Pinning 1 2 3 PIN1Collector PIN

MMBTA44N(BR3DA44N) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-223 NPN Silicon NPN transistor in a SOT-223 Plastic Package. / Features High voltage. / Applications High voltage control circuit . / Equivalent Circuit / Pinning 3 2 1 PIN1B

MMBTA44T(BR3DG44T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features High voltage. / Applications High voltage control circuit. / Equivalent Circuit / Pinning 1 2 3 PIN1Base

MMBTA44 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features ,High voltage, Low saturation voltage. / Applications High voltage control circuit. / Equivalent Circuit

MPSA44 NPN Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. As complementary type the PNP transistor MPSA94 is recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit

LESHAN RADIO COMPANY, LTD.LMBTA44LT1G LMBTA44LT1GS-LMBTA44LT1GNPN EPITAXIAL PLANAR TRANSISTORWe declare that the material of productcompliance with RoHS requirements.3DescriptionThe LMBTA44LT1G is designed for application 1that requires high voltage.2Features High Breakdown Voltage: VCEO=400(Min.) at IC=1mASOT 23 Complementary to LMBTA94LT1G S- Prefix

N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HA44 HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGSTa=25 TO-92 TstgStorage Temperature -55~150TjJunction Temperature150PCCollector Dissipation625mW

SEMICONDUCTOR MPSA44TECHNICAL DATA MPSA44 TRANSISTOR (NPN) B CFEATURES High Breakdown Voltage DIM MILLIMETERSA 4.70 MAXEB 4.80 MAX GC 3.70 MAXDD 0.55 MAXE 1.00F 1.27G 0.85H 0.45_HJ 14.00 + 0.50MAXIMUM RATINGS (Ta=25 unless otherwise noted) L 2.30F FM 0.51 MAXSymbol Parameter Value Unit 1 2 3 1. EMITTERVCBO Collector-Base Voltage 500 V

SEMICONDUCTORMMBTA44TECHNICAL DATANPN EPITAXIAL PLANAR TRANSISTORWe declare that the material of product compliance with RoHS requirements.3Description2The MMBTA44 is designed for application that requires high voltage. 1Features SOT 23 High Breakdown Voltage: VCEO=400(Min.) at IC=1mA Complementary to MMBTA94COLLECTOR3DEVICE MARKING 1MMBTA44 = 3DB

SMD Type TransistorsNPN TransistorsCXTA44 (KXTA44)1.70 0.1 Features Low Collector-Emitter Saturation Voltage High Breakdown Voltage0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - Emitter Voltage VCEO 400 V Emitter - Base Voltage VEBO 6 Collecto

SMD Type TransistorsNPN TransistorsMMBTA44 (KMBTA44)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features High Collector-Emitter Voltage1 2+0.1+0.05 Complement to MMBTA94 0.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - E

CHENMKO ENTERPRISE CO.,LTDCHTA44ZGPSURFACE MOUNT NPN SILICON Transistor VOLTAGE 400 Volts CURRENT 0.3 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.SC-73/SOT-223FEATURE* Small flat package. ( SC-73/SOT-223 )1.65+0.156.50+0.20* Suitable for high packing density.0.90+0.052.0+0.33.00+0.10* High saturation curre

DC COMPONENTS CO., LTD.DMBTA44DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for applications requiring high breakdown voltage.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 3.063(1.60) .108(0.65)3 = Collector.055(1.40) .089(0.25)1 2Absolute Maximum Ratings(TA=25oC).045(1.15).034(0.85)Char

MPSA44-BKMPSA44-BKHigh voltage Si-epitaxial planar transistorsNPN NPNHochspannungs-Si-Epitaxial Planar-TransistorenVersion 2011-07-07Power dissipation 625 mW0.1Verlustleistung4.6Plastic case TO-92Kunststoffgehuse (10D3)Weight approx. 0.18 gGewicht ca.E B CPlastic material has UL classification 94V-0Gehusematerial UL94V-0 klassifiziertSpecial packaging bul

MMBTA44General Purpose Transistors NPN SiliconProduct Summary VCEO 400V Ic200mA PC 350mWFEATURE High Collector-Emitter Voltage Complement to MMBTA94 SOT-23 MAXIMUM RATINGS (T =25unless otherwise noted)AParameter Symbol Limit UnitCollector-Base Voltage 400 VVCBOCollector-Emitter Voltage 400 V VCEOEmitter-Base Voltage VEBO V6A

Silicon FS Trench IGBT CRG05T60A44S-G General Description Feature Parameters VCES 650 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) IC 5 A technology, offering superior conduction and switching performances. Ptot TC=25 55 W RoHS Compliant. VCE(sat) 1.50 V Package TO-252 Features FS Trench Technology, Positive temperature

SOT-23 Plastic-Encapsulate TransistorsFormosa MSMMBTA44 TRANSISTOR (NPN) FEATURES High Collector-Emitter Voltage SOT23 Complement to MMBTA94 MARKING: 3D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V 1. BASE 2. EMITTER V Collector-Emitter Voltage 400 V CEO3. COLLECTOR V Emitter-Base Voltage

MMBTA4 4SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )Features SOT- 23 High Collector-Emitter Voltage Complement to MMBTA94 Marking: 3DSymbol Parameter Value Unit VCBO Collector-Base Voltage 400 V V Collector-Emitter Voltage 400 V CEOCV Emitter-Base Voltage 6 V EBOI Collector Current C200mA P Collector Power Dissipation 350 mW

www.msksemi.comMMBTA44-MSSemiconductor CompianceSemiconductor CompianceTRANSISTOR (NPN)FEATURES High Collector-Emitter Voltage Complement to MMBTA94-MS1. BASEMARKING: 3D 2. EMITTERSOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 400 VCBOV Collector-Emitter Voltage 400 V CEOV

MMBTA44 NPN Transistor FeaturesSOT-23 (TO-236) For High Voltage Switching and AmplifierApplications.1.Base 2.Emitter 3.CollectorAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage V 500 V CBOCollector Emitter Voltage V 400 V CEOEmitter Base Voltage V 6 V EBOCollector Cur

MMBTA44SOT-23 Plastic-Encapsulate Transistors MMBTA44 TRANSISTOR (NPN)SOT 23 FEATURES High Collector-Emitter Voltage Complement to MMBTA941. BASEMARKING: 3D 2. EMITTER3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 400 VVCEO Collector-Emitter Voltage 400 VVEBO Emitter-Base Voltage 6 VIC Co

MMBTA44 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBTA94 ; Complementary to MMBTA94 350mW; Power Dissipation of 350mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package

SiA444DJTwww.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) ()ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = 10 V 6 Low On-Resistance30 4.2 nC0.040 at VGS = 4.5 V 5 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSPowerPAK SC-70-6L

VBZA4430www.VBsemi.comN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.005at VGS = 10 V 1830 6.8 nC Optimized for High-Side Synchronous0.006 at VGS = 4.5 V 16Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchS

VBZA4435www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 D

VBZA4425www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.023at VGS = - 10 V - 7 100 % Rg TestedRoHS- 30 28 nCCOMPLIANT 100 % UIS Tested0.030 at VGS = - 4.5 V -5APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G S3 6 D

VBZA4410www.VBsemi.comN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = 10 V 1120 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 9Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO

VBZA4409www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011at VGS = - 10 V - 11 100 % Rg TestedRoHS- 30 15 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 9APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G S3 6

VBZA4420www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.013at VGS = - 10 V - 10 100 % Rg TestedRoHS- 30 18 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 9APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7G S3 6

VBZA4412www.VBsemi.comN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.010 at VGS = 10 V 1320 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 9Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side SwitchSO

VBZA4407www.VBsemi.comP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Available0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET- 30 22 nC 100 % Rg Tested0.018 at VGS = - 4.5 V - 10 100 % UIS TestedAPPLICATIONS Load SwitchesS - Notebook PCsSO-8- Desktop PCs

RoHS RoHSCOMPLIANT COMPLIANTMMBTA44 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface mount package ideally Suited for Automatic Insertion Mechanical Data Package: SOT-23 Molding compound meets UL 94 V-0 flammabilit

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBTA44 MAXIMUM RATINGS Characteristic Symbol Rating Unit VCEO 400 VCollector-Emitter Voltage -Collector-Base Voltage - VCBO 400 VVEBOEmitter-Base Voltage - 7 VCollector Current

MMBTA44BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to MMBTA94 High breakdown voltage Low Collector-emitter saturation voltage Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)A

HMBTA44NPN-TRANSISTORNPN, 200mA, 400V NPN HMBTA44NPN High Voltage Transistor SMDHMBTA44LT1NPN, BECHigh breakdown voltageGeneral Purpose TransistorsLow collector-emitter saturation voltageComplementary to HMBTA94A44Transistor Polarity: NPNMMBTA

isc N-Channel MOSFET Transistor FDA44N50FEATURESWith TO-3PN packagingWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSSV Gate