A44 - описание и поиск аналогов

 ..1. Size:593K  jiangsu
 a44.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 A44 TRANSISTOR (NPN) 1.EMITTER FEATURES 2.BASE High Breakdown Voltage 3.COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Col

 ..2. Size:173K  htsemi
 a44.pdf 

A44 TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Low Collector-Emitter Saturation Voltage High Breakdown Voltage 2. COLLECTOR 3. EMITTER MARKING A44 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current 300 mA PC Collec

 ..3. Size:356K  lge
 a44.pdf 

A44(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V Collector Current -Continuous IC 0.2 A Dimensions in inches and (millimeters) Collector Po

 ..4. Size:458K  can-sheng
 a44.pdf 

TO-92 Plastic-Encapsulate Transistors A44 TRANSISTOR (NPN) FEATURES TO-92 FEATURES TO-92 FEATURES TO-92 FEATURES TO-92 High voltage High voltage High voltage High voltage MAXIMUM RATINGS ( MAXIMUM RATINGS ( MAXIMUM RATINGS ( 1. EM T T E R MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. BASE Symbol Parameter Value Units Symbol Parameter Value Units Symbol Pa

 0.1. Size:170K  motorola
 mpsa44re.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA44/D High Voltage Transistor NPN Silicon MPSA44 Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol Value Unit CASE 29 04, STYLE 1 Collector Emitter Voltage VCEO 400 Vdc TO 92 (TO 226AA) Collector Base Voltage VCBO 500 Vdc Emitter Base Voltage VEBO 6.0 Vdc

 0.2. Size:96K  philips
 pmbta44.pdf 

PMBTA44 400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 22 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. 1.2 Features Low current (max. 300 mA) High voltage (max. 400 V) AEC-Q101 qua

 0.3. Size:107K  philips
 pzta44.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 PZTA44 NPN high-voltage transistor Product data sheet 1999 May 21 Supersedes data of 1998 Nov 26 NXP Semiconductors Product data sheet NPN high-voltage transistor PZTA44 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 400 V). 1 base 2, 4 collector APPLICATIONS 3 emitter Tel

 0.4. Size:48K  philips
 pzta44 4.pdf 

 0.5. Size:47K  philips
 mpsa44 4.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA44 NPN high-voltage transistor 1999 Apr 27 Product specification Supersedes data of 1998 Nov 26 Philips Semiconductors Product specification NPN high-voltage transistor MPSA44 FEATURES PINNING Low current (max. 300 mA) PIN DESCRIPTION High voltage (max. 400 V). 1 collector 2 base APPLICATIONS 3 emitter

 0.6. Size:569K  fairchild semi
 fqa44n10.pdf 

December 2000 TM QFET QFET QFET QFET FQA44N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 48A, 100V, RDS(on) = 0.039 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 48 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology is espe

 0.7. Size:754K  fairchild semi
 fqa44n30.pdf 

April 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 43.5A, 300V, RDS(on) = 0.069 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 120 nC) planar stripe, DMOS technology. Low Crss ( typical 75 pF) This advanced technology has be

 0.8. Size:663K  fairchild semi
 fqa44n08.pdf 

August 2000 TM QFET QFET QFET QFET FQA44N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 49.8A, 80V, RDS(on) = 0.034 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 38 nC) planar stripe, DMOS technology. Low Crss ( typical 90 pF) This advanced technology has been

 0.9. Size:96K  nxp
 pmbta44.pdf 

PMBTA44 400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 22 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. 1.2 Features Low current (max. 300 mA) High voltage (max. 400 V) AEC-Q101 qua

 0.10. Size:298K  nxp
 pzta44.pdf 

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 0.11. Size:219K  vishay
 sia449dj.pdf 

 0.12. Size:199K  vishay
 sia444djt.pdf 

New Product SiA444DJT Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.017 at VGS = 10 V 12 TrenchFET Power MOSFET 30 5 nC New Thermally Enhanced PowerPAK 0.022 at VGS = 4.5 V 12 SC-70 Package - Small Footprint Area Thin PowerPAK SC-70-6L-Single -

 0.13. Size:228K  vishay
 sia445edj.pdf 

New Product SiA445EDJ Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.0165 at VGS = - 4.5 V - 12a Thermally Enhanced PowerPAK 0.0185 at VGS = - 3.7 V - 20 - 12a 23 nC SC-70 Package 0.0300 at VGS = - 2.5 V - Small

 0.14. Size:258K  vishay
 sia446dj.pdf 

SiA446DJ www.vishay.com Vishay Siliconix N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET technology optimizes balance VDS (V) RDS(on) ( ) MAX. ID (A) a Qg (TYP.) of RDS(on), Qg, Qsw and Qoss 0.177 at VGS = 10 V 7.7 100 % Rg and UIS tested 150 0.185 at VGS = 7.5 V 7.6 4.3 nC Material categorization 0.250 at VGS = 6 V 4 For definitions of compliance

 0.15. Size:332K  vishay
 sia445edjt.pdf 

SiA445EDJT www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) Qg (TYP.) Thermally enhanced PowerPAK SC-70 package 0.0167 at VGS = -4.5 V -12 a - Small footprint area -20 0.0185 at VGS = -3.7 V -12 a 22 nC - Low on-resistance 0.0310 at VGS = -2.5 V -12 a Ultra-thin 0.6 m

 0.16. Size:190K  vishay
 sia443dj.pdf 

New Product SiA443DJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Qg (Typ) TrenchFET Power MOSFET 0.045 at VGS = - 4.5 V - 9a New Thermally Enhanced PowerPAK RoHS 0.063 at VGS = - 2.5 V - 20 - 9a 9 nC COMPLIANT SC-70 Package 0.088 at VGS = - 1.8 V - Small Footprint Area - 9a - Low On-Resis

 0.17. Size:230K  vishay
 sia440dj.pdf 

SiA440DJ Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.026 at VGS = 10 V Material categorization 12 For definitions of compliance please see 0.028 at VGS = 4.5 V 12 40 6.9 nC www.vishay.com/doc?99912 0.029 at VGS = 3.7 V 12 0.035 at VGS =

 0.18. Size:204K  vishay
 sia441dj.pdf 

SiA441DJ Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.047 at VGS = - 10 V - 12a Thermally Enhanced PowerPAK - 40 11 nC 0.065 at VGS = - 4.5 V SC-70 Package - 12a - Small Footprint Area - Low On-Resistance PowerPAK SC-70

 0.19. Size:226K  vishay
 sia447dj.pdf 

New Product SiA447DJ Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-70 Package - Small Footprint Area 0.0135 at VGS = - 4.5 V - 12a - Low On-Resistance 0.0194 at VGS = - 2.5 V - 12a - 12 31 nC 100 % Rg Tested 0.0344 at VGS = - 1.8 V - 12a

 0.20. Size:224K  vishay
 sia448dj.pdf 

New Product SiA448DJ Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) New Thermally Enhanced PowerPAK SC-70 Package 0.0150 at VGS = 4.5 V 12 - Small Footprint Area 0.0166 at VGS = 2.5 V 12 - Low On-Resistance 20 13 nC 0.0200 at VGS = 1.8 V 12 100 % Rg Tested 0.0324

 0.21. Size:321K  central
 cmpta44.pdf 

CMPTA44 www.centralsemi.com SURFACE MOUNT EXTREMELY HIGH VOLTAGE DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPTA44 type is a surface mount epoxy molded silicon planar epitaxial transistor designed for extremely high voltage applications. MARKING CODE C3Z SOT-23 CASE MAXIMUM RATINGS (TA=25 C) SYMBOL UNITS Collector-Base Voltage VCBO 450 V Collector-Emitte

 0.22. Size:449K  central
 cmlta44.pdf 

CMLTA44 www.centralsemi.com SURFACE MOUNT SILICON EXTREMELY HIGH VOLTAGE DESCRIPTION NPN TRANSISTOR The CENTRAL SEMICONDUCTOR CMLTA44 is an NPN high voltage transistor, epoxy molded in a space saving SOT-563 surface mount package and designed for extremely high voltage applications. MARKING CODE 44C SOT-563 CASE MAXIMUM RATINGS (TA=25 C) SYMBOL UNITS Collector-Base Voltage

 0.23. Size:527K  central
 czta44.pdf 

CZTA44 www.centralsemi.com SURFACE MOUNT EXTREMELY HIGH VOLTAGE DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CZTA44 type is a surface mount epoxy molded silicon planar epitaxial transistor designed for extremely high voltage applications. MARKING FULL PART NUMBER SOT-223 CASE SOT-223 CASE MAXIMUM RATINGS (TA=25 C) SYMBOL UNITS Collector-Base Voltage VCBO 450

 0.24. Size:596K  central
 czta44hc.pdf 

CZTA44HC SURFACE MOUNT www.centralsemi.com HIGH CURRENT DESCRIPTION HIGH VOLTAGE The CENTRAL SEMICONDUCTOR CZTA44HC type is NPN SILICON TRANSISTOR a surface mount epoxy molded silicon planar epitaxial transistor designed for extremely high voltage and high current applications. MARKING FULL PART NUMBER SOT-223 CASE SOT-223 CASE MAXIMUM RATINGS (TA=25 C) SYMBOL UNITS Colle

 0.25. Size:791K  mcc
 pzta44.pdf 

PZTA44 Features High Voltage Driver Application Halogen Free. Green Device (Note 1) NPN Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Plastic Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Transistors Compliant. See Ordering Information) Maximum Ratings @ 25 C Unless Otherwise Specified Operating Ju

 0.26. Size:799K  mcc
 pxta44.pdf 

PXTA44 Electrical Characteristics @ 25 C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V(BR)CBO IC=100 A, IE=0 Collector-Base Breakdown Voltage 500 V V(BR)CEO IC=1mA, IB=0 Collector-Emitter Breakdown Voltage 400 V V(BR)EBO IE=10 A, IC=0 Emitter-Base Breakdown Voltage 6V ICBO VCB=400V, IE=0 Collector-Base Cutoff Current 100 nA IEBO VEB=4V, IC=0 Emitter-

 0.27. Size:596K  mcc
 mmbta44.pdf 

MMBTA44 Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating NPN Silicon High Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Voltage Transistor Maximum Ratings @ 25 C Unless Otherwise Specified Operating Junction Temperature Range -55 to +1

 0.28. Size:66K  onsemi
 mpsa44-d.pdf 

MPSA44 Preferred Device High Voltage Transistor NPN Silicon Features http //onsemi.com Pb-Free Packages are Available* COLLECTOR MAXIMUM RATINGS 3 Rating Symbol Value Unit Collector -Emitter Voltage VCEO 400 Vdc 2 BASE Collector -Base Voltage VCBO 500 Vdc Emitter -Base Voltage VEBO 6.0 Vdc 1 Collector Current - Continuous IC 300 mAdc EMITTER Total Device Dissipation @ TA

 0.29. Size:2264K  onsemi
 fqa44n30.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.30. Size:289K  panasonic
 drc5a44e.pdf 

This product complies with the RoHS Directive (EU 2002/95/EC). DRC5A44E Silicon NPN epitaxial planar type For digital circuits Complementary to DRA5A44E Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-free package Pin Name 1 B

 0.31. Size:423K  panasonic
 dra9a44w.pdf 

This product complies with the RoHS Directive (EU 2002/95/EC). DRA9A44W Silicon PNP epitaxial planar type For digital circuits Complementary to DRC9A44W DRA5A44W in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-

 0.32. Size:290K  panasonic
 drc5a44w.pdf 

This product complies with the RoHS Directive (EU 2002/95/EC). DRC5A44W Silicon NPN epitaxial planar type For digital circuits Complementary to DRA5A44W Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-free package Pin Name 1 B

 0.33. Size:414K  panasonic
 dra5a44e.pdf 

This product complies with the RoHS Directive (EU 2002/95/EC). DRA5A44E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC5A44E Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-free package Pin Name 1 B

 0.34. Size:231K  panasonic
 drcqa44t.pdf 

This product complies with the RoHS Directive (EU 2002/95/EC). DRCQA44T Silicon NPN epitaxial planar type For digital circuits Complementary to DRAQA44T DRC3144T in USSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) USSMini3-F1-B Contributes to miniatu

 0.35. Size:426K  panasonic
 dra5a44w.pdf 

This product complies with the RoHS Directive (EU 2002/95/EC). DRA5A44W Silicon PNP epitaxial planar type For digital circuits Complementary to DRC5A44W Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-free package Pin Name 1 B

 0.36. Size:286K  panasonic
 drc9a44w.pdf 

This product complies with the RoHS Directive (EU 2002/95/EC). DRC9A44W Silicon NPN epitaxial planar type For digital circuits Complementary to DRA9A44W DRC5A44W in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-fr

 0.37. Size:292K  panasonic
 drc3a44e.pdf 

This product complies with the RoHS Directive (EU 2002/95/EC). DRC3A44E Silicon NPN epitaxial planar type For digital circuits Complementary to DRA3A44E DRC9A44E in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Halo

 0.38. Size:231K  panasonic
 draqa44t.pdf 

This product complies with the RoHS Directive (EU 2002/95/EC). DRAQA44T Silicon PNP epitaxial planar type For digital circuits Complementary to DRCQA44T DRA3144T in USSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) USSMini3-F1-B Contributes to miniaturi

 0.39. Size:411K  panasonic
 dra9a44e.pdf 

This product complies with the RoHS Directive (EU 2002/95/EC). DRA9A44E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC9A44E DRA5A44E in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-fr

 0.40. Size:293K  panasonic
 drc3a44w.pdf 

This product complies with the RoHS Directive (EU 2002/95/EC). DRC3A44W Silicon NPN epitaxial planar type For digital circuits Complementary to DRA3A44W DRC9A44W in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge

 0.41. Size:353K  panasonic
 drcqa44e.pdf 

This product complies with the RoHS Directive (EU 2002/95/EC). DRCQA44E Silicon NPN epitaxial planar type For digital circuits Complementary to DRAQA44E DRC3A44E in USSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. USSMini3-F1-B Eco-friendly Halogen-

 0.42. Size:292K  panasonic
 dra3a44e.pdf 

This product complies with the RoHS Directive (EU 2002/95/EC). DRA3A44E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC3A44E DRA9A44E in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge

 0.43. Size:400K  panasonic
 drc9a44e.pdf 

This product complies with the RoHS Directive (EU 2002/95/EC). DRC9A44E Silicon NPN epitaxial planar type For digital circuits Complementary to DRA9A44E DRC5A44E in SSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini3-F3-B Eco-friendly Halogen-fr

 0.44. Size:215K  utc
 mmbta44 mmbta45.pdf 

UNISONIC TECHNOLOGIES CO., LTD MMBTA44/45 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTORS FEATURES 3 *Collector-Emitter voltage V =400V (UTC MMBTA44) CEO V =350V (UTC MMBTA45) CEO *Collector current up to 300mA 1 *Complement to UTC MMBTA94/93 2 *Power Dissipation P (max)=350mW D SOT-23 (JEDEC TO-236) ORDERING INFORMATION Pin Assignment Ordering Number Pa

 0.45. Size:176K  utc
 mpsa44h.pdf 

UNISONIC TECHNOLOGIES CO., LTD MPSA44H NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES * Collector-Emitter Voltage * V =400V CEO * Collector Current up to 300mA ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MPSA44HL-AB3-R MPSA44HG-AB3-R SOT-89 B C E Tape Reel MPSA44HL-T92-B MPSA44HG-T92-B TO-92 E B C Tape Box

 0.46. Size:270K  utc
 mpsa44 mpsa45.pdf 

UNISONIC TECHNOLOGIES CO., LTD MPSA44/45 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR 1 1 FEATURES TO-252 SOT-89 * Collector-Emitter Voltage * V =400V (UTC MPSA44) CEO * V =350V (UTC MPSA45) CEO * Collector Current up to 300mA 1 1 TO-92NL TO-92 1 TO-126 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3

 0.47. Size:106K  utc
 pzta45 pzta44.pdf 

UNISONIC TECHNOLOGIES CO., LTD PZTA44/45 NPN SILICON TRANSISTOR NPN HIGH VOLTAGE TRANSISTOR FEATURES * Collector-emitter voltage V =400V(PZTA44) CEO V =350V(PZTA45) CEO * Collector current up to 300mA APPLICATION * Telephone switching * High voltage switch ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3

 0.48. Size:30K  utc
 mpsa44 mpsa45-utc.pdf 

UTC MPSA 44/ 45 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage VCEO=400V(MPSA44) VCEO=350V(MPSA45) *Collector current up to 300mA *Complement to MPSA94/93 *Collector Dissipation Pc(max)=625mW APPLICATION *Telephone switching TO-92 *High voltage switch 1 EMITTER 2 BASE 3 COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Operating temperature ra

 0.49. Size:437K  secos
 mpsa44.pdf 

MPSA44 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High Voltage NPN Transistor G H Emitter J Millimeter REF. A D Min. Max. A 4.40 4.70 B B 4.30 4.70 C 12.70 - Base K D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 E C F G 1.27 TYP. Collector

 0.50. Size:441K  secos
 mmbta44.pdf 

MMBTA44 500V, 0.2A NPN Silicon Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High Voltage Transistor A L 3 3 MARKING Top View C B 1 1 2 3D 2 K E D PACKING INFORMATION Collector H J F G Package MPQ Leader Size Millimeter Millimeter REF. REF. SOT-23 3K 7 in

 0.51. Size:392K  cdil
 pzta44.pdf 

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR PZTA44 SOT-223 Formed SMD Package High Voltage Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS Collector Base Voltage VCBO 500 V VCEO Collector Emitter Voltage 400 V VEBO Emitter Base Voltage 6.0 V IC Collector Current (DC) 300 mA

 0.52. Size:134K  cdil
 cmbta44.pdf 

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBTA44 PIN CONFIGURATION (NPN) SOT-23 1 = BASE 2 = EMITTER Formed SMD Package 3 = COLLECTOR 3 1 2 Marking Code is =3Z Designed for Extremely High Voltage Applications ABSOLUTE MAXIMUM RATINGS (Ta=25 C) DESCRIPTION SYMBOL VALUE UNITS Collector Base

 0.53. Size:273K  cdil
 mpsa44 45.pdf 

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS MPSA44 MPSA45 TO-92 Plastic Package C B E High Voltage Transistors Complementary of MPSA44 is MPSA94 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL MPSA44 MPSA45 UNITS VCBO Collector Base Voltage 500 400 V VCEO Collector Emitter Voltage 400 350 V VEBO

 0.54. Size:473K  jiangsu
 mpsa44.pdf 

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 MPSA44 TRANSISTOR (NPN) 1.EMITTER FEATURES 2.BASE High Breakdown Voltage 3.COLLECTOR Equivalent Circuit FE

 0.55. Size:688K  jiangsu
 pzta44.pdf 

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-223(8R) Plastic-Encapsulate Transistors SOT-223 PZTA44 TRA NSISTOR (NPN) FEATURES Low current 300mA(max) 1. BASE High voltage VCEO=400V 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V MARKING VCEO Collector-Emitter Voltage 400

 0.56. Size:406K  jiangsu
 mmbta44.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA44 TRANSISTOR (NPN) SOT 23 FEATURES High Collector-Emitter Voltage Complement to MMBTA94 MARKING 3D 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V V Collector-Emitt

 0.57. Size:39K  kec
 pzta44.pdf 

SEMICONDUCTOR PZTA44 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. A TELEPHONE APPLICATION. H L 2 FEATURES High Breakdown Voltage. K E B Collector Power Dissipation PC=2W(TC=25 ) 1 3 J G F F MAXIMUM RATING (Ta=25 ) DIM MILLIMETERS 1 2 3 _ CHARACTERISTIC SYMBOL RATING UNIT A 6.5 + 0.2 C _ B 3.5 + 0.2 VCBO Collector-Base Voltage 500 V C 1.8

 0.58. Size:359K  kec
 mpsa44 mpsa45.pdf 

SEMICONDUCTOR MPSA44/45 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. B C FEATURES High Breakdown Voltage. Collector Power Dissipation PC=625mW. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D MAXIMUM RATING (Ta=25 ) D 0.45 E 1.00 CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 0.85 MPSA44 500 H 0.45 Collector-Base _ VCBO H V J 14.00

 0.59. Size:315K  kec
 mmbta44.pdf 

SEMICONDUCTOR MMBTA44 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. FEATURES High Breakdown Voltage. Collector Power Dissipation PC=350mW. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-BaseVoltage 450 V VCEO Collector-EmitterVoltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current 300 mA PC * Collector Power Dissi

 0.60. Size:1803K  htsemi
 mmbta44.pdf 

MMBTA44 TRANSISTOR (NPN) FEATURES High Collector-Emitter Voltage Complement to MMBTA94 MARKING 3D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V SOT 23 V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current-Continuous 200 mA C I Collector Current -Pulsed 300

 0.61. Size:235K  gsme
 mmbta44.pdf 

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GMA44 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit VCEO 400 V Collector-Emitter Voltage - Collect

 0.62. Size:490K  lge
 pzta44.pdf 

PZTA44 SOT-223 Transistor(NPN) 1. BASE SOT-223 2. COLLECTOR 1 3. EMITTER Features Low current 300mA(max) High voltage VCEO=400V MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 6 V IC Collector Cur

 0.63. Size:1288K  lge
 mmbta44.pdf 

MMBTA44 Transistor(NPN) SOT-23 Features Power dissipation PCM = 0.35W (Tamb=25 ) ICM = 0.2A Collector current Collector-base voltage V(BR)CBO = 400V Operating and storage junction temperature range T J, Tstg -55 to +150 Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test co

 0.64. Size:911K  wietron
 mpsa44.pdf 

MPSA44 High-Voltage NPN Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 400 Vdc Collector-Base Voltage VCBO 400 Vdc Emitter-Base VOltage VEBO 5.0 Vdc Collector Current IC 200 mAdc PD 0.625 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C Storage, Temper

 0.65. Size:268K  wietron
 pzta44.pdf 

PZTA44 NPN Silicon Planar Epitaxial Transistor COLLECTOR 2, 4 4 1. BASE 2.COLLECTOR 3.EMITTER BASE 4.COLLECTOR 1 1 2 3 3 SOT-223 EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Symbol Rating Value Unit V Collector-Emitter Voltage CEO V 400 VCBO Collector-Base Voltage 500 V VEBO Emitter-Base Voltage 6 V IC(DC) Collector Current (DC) 300 mA PD Total Device Disspation TA=2

 0.66. Size:178K  wietron
 wtma44.pdf 

WTMA44 NPN Epitaxial Planar Transistors SOT-89 P b Lead(Pb)-Free 1 *Low Collector-Emitter Saturation Voltage 2 1. BASE 3 2. COLLECTOR *High Breakdown Voltage 3. EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage 500 VCEO V Collector-Emitter Voltage 400 VEBO V Emitter-Base Voltage 6 Collector Current IC 300 mA Collector Pow

 0.67. Size:258K  wietron
 mmbta44.pdf 

MMBTA44 COLLECTOR 3 High-Voltage NPN Transistor SOT-23 3 Surface Mount 1 BASE 1 2 2 EMITTER Maximum Ratings Rating Symbol Value Unit C ollector-E mitter V oltage V 400 Vdc CEO C ollector-B ase V oltage VCBO 450 Vdc E mitter-B as e V Oltage VEBO 6.0 Vdc C ollector C urrent-C ontinuous IC 300 mAdc Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipat

 0.68. Size:47K  hsmc
 hmpsa44.pdf 

Spec. No. HE6358 HI-SINCERITY Issued Date 1993.01.15 Revised Date 2004.07.21 MICROELECTRONICS CORP. Page No. 1/4 HMPSA44 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMPSA44 is designed for application that requires high voltage. Features TO-92 High Breakdown Voltage 400(Min) at IC=1mA High Current Gain IC=300mA at 25 C Complementary to HMPSA94 Absolute

 0.69. Size:37K  hsmc
 hmbta44.pdf 

Spec. No. HN200208 HI-SINCERITY Issued Date 1993.06.23 Revised Date 2004.09.08 MICROELECTRONICS CORP. Page No. 1/4 HMBTA44 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBTA44 is designed for application requires high voltage. Features SOT-23 High voltage VCEO=400V(min) at IC=1mA High current IC=300mA at 25 C Complementary with HMBTA94 Absolute Maximum R

 0.70. Size:329K  analog power
 ama440n.pdf 

Analog Power AMA440N N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 15 @ VGS = 10V 12 Low thermal impedance 40 21 @ VGS = 4.5V 10 Fast switching speed DFN2X2 Typical Applications DC/DC Conversion Power Routing Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHER

 0.71. Size:654K  shenzhen
 mpsa44.pdf 

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors TRANSISTOR (NPN) MPSA44 TO-92 FEATURES High voltage 1. EMITTER 2. BASE MAXIMUM RATINGS* TA=25 unless otherwise noted 3. COLLECTOR Symbol Parameter Value Units 1 2 3 VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V Co

 0.72. Size:234K  cystek
 btna44m3.pdf 

Spec. No. C211M3 Issued Date 2013.05.09 CYStech Electronics Corp. Revised Date 2013.08.05 Page No. 1/6 High Voltage NPN Epitaxial Planar Transistor BTNA44M3 Features High breakdown voltage. (BV = 400V) CEO Low saturation voltage, typically V C B CE(sat) = 60mV at I /I =10mA/1mA. Complementary to BTPA94M3 Symbol Outline BTNA44M3 SOT-89 B Base

 0.73. Size:243K  cystek
 btna44a3.pdf 

Spec. No. C211A3 Issued Date 2003.03.026 CYStech Electronics Corp. Revised Date 2013.11.20 Page No. 1/6 High Voltage NPN Epitaxial Planar Transistor BTNA44A3 Features High breakdown voltage. (BV =400V) CEO Low saturation voltage, typically V (sat) =60mV at I /I 10mA/1mA. CE C B= Complementary to BTPA94A3 Pb-free lead plating and halogen-free packag

 0.74. Size:248K  cystek
 bta4403a3.pdf 

Spec. No. C305A3 Issued Date 2007.10.16 CYStech Electronics Corp. Revised Date 2012.04.12 Page No. 1/6 General Purpose PNP Epitaxial Planar Transistor BTA4403A3 Description The BTA4403A3 is designed for using in driver stage of AF amplifier and general purpose amplification. Large IC , IC Max .= -0.6A Low VCE(sat), typically -0.2V at IC/IB = -300mA / -30mA

 0.75. Size:255K  cystek
 btna44n3.pdf 

Spec. No. C210N3-H Issued Date 2003.06.12 CYStech Electronics Corp. Revised Date 2010.07.14 Page No. 1/6 High Voltage NPN Epitaxial Planar Transistor BVCEO 400V IC 300mA BTNA44N3 RCESAT(typ.) 10 Features High breakdown voltage. (BV =400V) CEO Low saturation voltage, typically V C B CE(sat) = 0.1V at I /I =10mA/1mA. Complementary to BTPA94N3

 0.76. Size:143K  samhop
 sta4470.pdf 

STA4470 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 12 @ VGS=10V Suface Mount Package. 40V 11A 16 @ VGS=4.5V PDIP-8 1 (TA=25 C unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Units Limit VDS

 0.77. Size:1034K  blue-rocket-elect
 mpsa44.pdf 

MPSA44 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High voltage. / Applications High voltage control circuit. / Equivalent Circuit / Pinning 1 2 3 PIN1 Collector PIN

 0.78. Size:488K  blue-rocket-elect
 mmbta44n.pdf 

MMBTA44N(BR3DA44N) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-223 NPN Silicon NPN transistor in a SOT-223 Plastic Package. / Features High voltage. / Applications High voltage control circuit . / Equivalent Circuit / Pinning 3 2 1 PIN1 B

 0.79. Size:477K  blue-rocket-elect
 mmbta44t.pdf 

MMBTA44T(BR3DG44T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features High voltage. / Applications High voltage control circuit. / Equivalent Circuit / Pinning 1 2 3 PIN1 Base

 0.80. Size:894K  blue-rocket-elect
 mmbta44.pdf 

MMBTA44 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features , High voltage, Low saturation voltage. / Applications High voltage control circuit. / Equivalent Circuit

 0.81. Size:359K  semtech
 mpsa44.pdf 

MPSA44 NPN Silicon Epitaxial Planar Transistor for high voltage switching and amplifier applications. As complementary type the PNP transistor MPSA94 is recommended. On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit

 0.82. Size:94K  lrc
 lmbta44lt1g.pdf 

LESHAN RADIO COMPANY, LTD. LMBTA44LT1G LMBTA44LT1G S-LMBTA44LT1G NPN EPITAXIAL PLANAR TRANSISTOR We declare that the material of product compliance with RoHS requirements. 3 Description The LMBTA44LT1G is designed for application 1 that requires high voltage. 2 Features High Breakdown Voltage VCEO=400(Min.) at IC=1mA SOT 23 Complementary to LMBTA94LT1G S- Prefix

 0.83. Size:111K  shantou-huashan
 ha44.pdf 

N P N S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HA44 HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25 TO-92 Tstg Storage Temperature -55 150 Tj Junction Temperature 150 PC Collector Dissipation 625mW

 0.84. Size:1102K  china
 mpsa44u.pdf 

 0.85. Size:170K  first silicon
 mpsa44.pdf 

SEMICONDUCTOR MPSA44 TECHNICAL DATA MPSA44 TRANSISTOR (NPN) B C FEATURES High Breakdown Voltage DIM MILLIMETERS A 4.70 MAX E B 4.80 MAX G C 3.70 MAX D D 0.55 MAX E 1.00 F 1.27 G 0.85 H 0.45 _ H J 14.00 + 0.50 MAXIMUM RATINGS (Ta=25 unless otherwise noted) L 2.30 F F M 0.51 MAX Symbol Parameter Value Unit 1 2 3 1. EMITTER VCBO Collector-Base Voltage 500 V

 0.86. Size:189K  first silicon
 mmbta44.pdf 

SEMICONDUCTOR MMBTA44 TECHNICAL DATA NPN EPITAXIAL PLANAR TRANSISTOR We declare that the material of product compliance with RoHS requirements. 3 Description 2 The MMBTA44 is designed for application that requires high voltage. 1 Features SOT 23 High Breakdown Voltage VCEO=400(Min.) at IC=1mA Complementary to MMBTA94 COLLECTOR 3 DEVICE MARKING 1 MMBTA44 = 3D B

 0.87. Size:1127K  kexin
 cxta44.pdf 

SMD Type Transistors NPN Transistors CXTA44 (KXTA44) 1.70 0.1 Features Low Collector-Emitter Saturation Voltage High Breakdown Voltage 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - Emitter Voltage VCEO 400 V Emitter - Base Voltage VEBO 6 Collecto

 0.88. Size:1104K  kexin
 mmbta44.pdf 

SMD Type Transistors NPN Transistors MMBTA44 (KMBTA44) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High Collector-Emitter Voltage 1 2 +0.1 +0.05 Complement to MMBTA94 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - E

 0.89. Size:138K  chenmko
 chta44zgp.pdf 

CHENMKO ENTERPRISE CO.,LTD CHTA44ZGP SURFACE MOUNT NPN SILICON Transistor VOLTAGE 400 Volts CURRENT 0.3 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. ( SC-73/SOT-223 ) 1.65+0.15 6.50+0.20 * Suitable for high packing density. 0.90+0.05 2.0+0.3 3.00+0.10 * High saturation curre

 0.90. Size:178K  dc components
 dmbta44.pdf 

DC COMPONENTS CO., LTD. DMBTA44 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for applications requiring high breakdown voltage. SOT-23 .020(0.50) Pinning .012(0.30) 1 = Base 2 = Emitter 3 .063(1.60) .108(0.65) 3 = Collector .055(1.40) .089(0.25) 1 2 Absolute Maximum Ratings(TA=25oC) .045(1.15) .034(0.85) Char

 0.91. Size:86K  diotec
 mpsa44-bk.pdf 

MPSA44-BK MPSA44-BK High voltage Si-epitaxial planar transistors NPN NPN Hochspannungs-Si-Epitaxial Planar-Transistoren Version 2011-07-07 Power dissipation 625 mW 0.1 Verlustleistung 4.6 Plastic case TO-92 Kunststoffgeh use (10D3) Weight approx. 0.18 g Gewicht ca. E B C Plastic material has UL classification 94V-0 Geh usematerial UL94V-0 klassifiziert Special packaging bul

 0.92. Size:1397K  slkor
 mmbta44.pdf 

MMBTA44 General Purpose Transistors NPN Silicon Product Summary VCEO 400V I c 200mA PC 350mW FEATURE High Collector-Emitter Voltage Complement to MMBTA94 SOT-23 MAXIMUM RATINGS (T =25 unless otherwise noted) A Parameter Symbol Limit Unit Collector-Base Voltage 400 V VCBO Collector-Emitter Voltage 400 V VCEO Emitter-Base Voltage VEBO V 6 A

 0.93. Size:837K  wuxi china
 crg05t60a44s-g.pdf 

Silicon FS Trench IGBT CRG05T60A44S-G General Description Feature Parameters VCES 650 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) IC 5 A technology, offering superior conduction and switching performances. Ptot TC=25 55 W RoHS Compliant. VCE(sat) 1.50 V Package TO-252 Features FS Trench Technology, Positive temperature

 0.94. Size:1708K  fms
 mmbta44.pdf 

SOT-23 Plastic-Encapsulate Transistors Formosa MS MMBTA44 TRANSISTOR (NPN) FEATURES High Collector-Emitter Voltage SOT 23 Complement to MMBTA94 MARKING 3D MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V 1. BASE 2. EMITTER V Collector-Emitter Voltage 400 V CEO 3. COLLECTOR V Emitter-Base Voltage

 0.95. Size:2195K  high diode
 mmbta44.pdf 

MMBTA4 4 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) Features SOT- 23 High Collector-Emitter Voltage Complement to MMBTA94 Marking 3D Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V V Collector-Emitter Voltage 400 V CEO C V Emitter-Base Voltage 6 V EBO I Collector Current C 200 mA P Collector Power Dissipation 350 mW

 0.96. Size:4268K  msksemi
 mmbta44-ms.pdf 

www.msksemi.com MMBTA44-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES High Collector-Emitter Voltage Complement to MMBTA94-MS 1. BASE MARKING 3D 2. EMITTER SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 400 V CBO V Collector-Emitter Voltage 400 V CEO V

 0.97. Size:612K  pjsemi
 mmbta44.pdf 

MMBTA44 NPN Transistor Features SOT-23 (TO-236) For High Voltage Switching and Amplifier Applications. 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 500 V CBO Collector Emitter Voltage V 400 V CEO Emitter Base Voltage V 6 V EBO Collector Cur

 0.98. Size:1394K  cn shikues
 mmbta44.pdf 

MMBTA44 SOT-23 Plastic-Encapsulate Transistors MMBTA44 TRANSISTOR (NPN) SOT 23 FEATURES High Collector-Emitter Voltage Complement to MMBTA94 1. BASE MARKING 3D 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Co

 0.99. Size:839K  cn zre
 mmbta44.pdf 

MMBTA44 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBTA94 ; Complementary to MMBTA94 350mW; Power Dissipation of 350mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Package

 0.100. Size:1426K  cn vbsemi
 sia444djt.pdf 

SiA444DJT www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) TrenchFET Power MOSFET 0.030 at VGS = 10 V 6 Low On-Resistance 30 4.2 nC 0.040 at VGS = 4.5 V 5 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS PowerPAK SC-70-6L

 0.101. Size:890K  cn vbsemi
 vbza4430.pdf 

VBZA4430 www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.005at VGS = 10 V 18 30 6.8 nC Optimized for High-Side Synchronous 0.006 at VGS = 4.5 V 16 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch S

 0.102. Size:492K  cn vbsemi
 vbza4435.pdf 

VBZA4435 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6 D

 0.103. Size:1128K  cn vbsemi
 vbza4425.pdf 

VBZA4425 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.023at VGS = - 10 V - 7 100 % Rg Tested RoHS - 30 28 nC COMPLIANT 100 % UIS Tested 0.030 at VGS = - 4.5 V -5 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G S 3 6 D

 0.104. Size:1229K  cn vbsemi
 vbza4410.pdf 

VBZA4410 www.VBsemi.com N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = 10 V 11 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 9 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO

 0.105. Size:1060K  cn vbsemi
 vbza4409.pdf 

VBZA4409 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011at VGS = - 10 V - 11 100 % Rg Tested RoHS - 30 15 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 9 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G S 3 6

 0.106. Size:1442K  cn vbsemi
 vbza4420.pdf 

VBZA4420 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.013at VGS = - 10 V - 10 100 % Rg Tested RoHS - 30 18 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 9 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G S 3 6

 0.107. Size:1461K  cn vbsemi
 vbza4412.pdf 

VBZA4412 www.VBsemi.com N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.010 at VGS = 10 V 13 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 9 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO

 0.108. Size:443K  cn vbsemi
 vbza4407.pdf 

VBZA4407 www.VBsemi.com P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.018 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop PCs

 0.109. Size:312K  cn yangzhou yangjie elec
 mmbta44.pdf 

RoHS RoHS COMPLIANT COMPLIANT MMBTA44 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface mount package ideally Suited for Automatic Insertion Mechanical Data Package SOT-23 Molding compound meets UL 94 V-0 flammabilit

 0.110. Size:292K  cn fosan
 mmbta44.pdf 

 0.111. Size:665K  cn hottech
 mmbta44.pdf 

MMBTA44 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to MMBTA94 High breakdown voltage Low Collector-emitter saturation voltage Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A

 0.112. Size:238K  cn haohai electr
 hmbta44.pdf 

HMBTA44 NPN-TRANSISTOR NPN, 200mA, 400V NPN HMBTA44 NPN High Voltage Transistor SMD HMBTA44LT1 NPN, BEC High breakdown voltage General Purpose Transistors Low collector-emitter saturation voltage Complementary to HMBTA94 A44 Transistor Polarity NPN MMBTA

 0.113. Size:215K  inchange semiconductor
 fda44n50.pdf 

isc N-Channel MOSFET Transistor FDA44N50 FEATURES With TO-3PN packaging With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS V Gate