HM4033
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM4033
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5
W
Tensión colector-base (Vcb): 80
V
Tensión colector-emisor (Vce): 80
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100
MHz
Capacitancia de salida (Cc): 20
pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta:
SOT89
Búsqueda de reemplazo de transistor bipolar HM4033
HM4033
Datasheet (PDF)
..1. Size:253K htsemi
hm4033.pdf
HM4033 TRANSISTOR (PNP) SOT-89-3L FEATURES 1. BASE High Current General Purpose Amplifier Applications 2. COLLECTOR 3. EMITTER MARKING:H4033 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1 A PC Collector Powe
..2. Size:36K hsmc
hm4033.pdf
Spec. No. : HE9523HI-SINCERITYIssued Date : 1997.04.17Revised Date : 2005.06.30MICROELECTRONICS CORP.Page No. : 1/4HM4033PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HM4033 is designed for high current general purpose amplifier applications.SOT-89Absolute Maximum Ratings Maximum TemperaturesStorage Temperature .......................................................
9.1. Size:404K cn hmsemi
hm4030.pdf
N-Channel Trench Power MOSFETGeneral DescriptionGeneral DescriptionGeneral DescriptionGeneral DescriptionThe is N-channel MOS Field Effect Transistordesigned for high current switching applications. Rugged EAScapability and ultra low R is suitable for PWM, loadDS(ON)switching especially for E-Bike controller applications.FeaturesFeaturesFeaturesFeatures
9.2. Size:844K cn hmsemi
hm4030d.pdf
HM4030 N-Channel Trench Power MOSFET General Description The HM4030D is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, loadDS(ON) switching especially for E-Bike controller applications.Features V =100V; I =118A@ V =10V; DS D GSTO-263-2L top view R
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.